Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

Potentiation of a three drug chemotherapy regimen by radiation

The combination of N-(phosphonacetyl)-L-aspartate, 6-methylmercaptopurine, and 6-aminonicotinamide has been shown to be an effective antineoplastic regimen and also to enhance the effects of other chemotherapeutic agents. The mechanism of action of this combination of drugs is not known definitively, but one possible mechanism is biochemical modulation of energy metabolism and inhibition of production of tumor ATP. Tumor-bearing mice were treated with N-(phosphonacetyl)-L-aspartate, followed 17 h later by 6-methylmercaptopurine and 6-aminonicotinamide. 31P nuclear magnetic resonance spectroscopic studies demonstrated a significant depletion of high energy phosphates at 10 h post-6-methylmercaptopurine and 6-aminonicotinamide. The addition of radiation at this time was shown to induce a significantly longer tumor growth delay and a greater number of regressions (including durable complete regressions) than either chemotherapy or radiation alone. The combination of chemotherapy and radiation was found to be supra-additive compared to the antineoplastic effects of either modality administered separately, without a measurable increase in host toxicity.     

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (111), Si (100) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200 V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (0001) than in Si (111). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered.     

Model Driven Architecture

Bei der Model Driven Architecture (MDA) bilden Modelle die zentralen Elemente des Softwareentwicklungsprozesses. Ziel ist es, plattformspezifische Modelle möglichst automatisiert aus plattformunabhängigen Modellen abzuleiten. Dadurch soll der Aufwand der Softwareentwicklung verringert und die Adaptierung an neue Technologien erleichtert werden.*Vorschläge an Prof. Dr. Frank Puppe oder Dieter Steinbauer Alle „Aktuellen Schlagwörter“ seit 1988 finden Sie unter: www.ai-wuerzburg.de/as     

Controlled undercooling of liquid iron in contact with ZrO2 and MgO substrates under varying oxygen partial pressures

The objective of this study is to determine the conditions under which the inclusions present in liquid steel can act as heterogeneous nucleants for solidification. In order to study the factors that define the undercooling of a given metal/oxide couple, the undercooling of a pure iron sessile droplet in contact with Al₂O₃, ZrO₂, and MgO substrates was measured under controlled oxygen partial pressures by observing droplet recalescence. The results showed that the undercooling of iron, in contact with a particular substrate, did not have a unique value, but was significantly affected by the oxygen content on the gas phase. For oxygen partial pressures between 10⁻²¹ and 10⁻¹⁹, the undercooling of iron on ZrO₂ substrates was stable and around 290 °C. In the same range of oxygen partial pressure, the undercooling of iron on MgO substrates remained below 100 °C due to the low stability of this oxide. At lower oxygen contents, substrate decomposition might be the cause for the observed drop in the undercooling of iron on ZrO₂ substrates to below 100 °C. The undercooling also decreased for increasing oxygen content as verified when the gas was changed from gettered Ar/Ar-H₂ to CO/CO₂ mixtures. The variation in undercooling was related to the wetting of the substrate by the liquid metal, where the deep undercooling observed in the ZrO₂ experiments occurred when the highest contact angle between the liquid metal and the substrate was achieved.     

IPv6 delay and loss performance evolution

Although packet delay and loss are two important parameters of the Internet performance, to the best of our knowledge, the evolution of large‐scale IPv6 delay and loss performance has previously not been studied. In this paper, we analyze more than 600 end‐to‐end IPv6 paths between about 26 testboxes of RIPE Network Coordination Centre over two years, and compare the delay and loss performance over time with their IPv4 counterparts. We present and discuss the measurement methodologies and show that IPv6 paths have a higher delay and loss than their IPv4 counterparts. The main reason for the worse performance stems from IPv6‐in‐IPv4 tunnels rather than from native IPv6 paths and such tunnels are still widely used today. Copyright © 2007 John Wiley & Sons, Ltd.     

What do we know about innovation in nanotechnology? Some propositions about an emerging field between hype and path-dependency

This contribution formulates a number of propositions about the emergence of novel nanoscience and nanotechnology (N&N). Seeking to complement recent work that aims to define a research agenda and draws on general insights from the innovation literature, this paper aims to synthesize knowledge from innovation-related studies of the N&N field. More specifically, it is suggested that N&N is often misconstrued as either a field of technology or an area of (broadly) converging technologies while evidence to date suggests rather that N&N be considered a set of inter-related and overlapping about not necessarily merging technologies. The role of instrumentation in connecting the various N&N fields is underlined. Finally, the question is raised whether change in N&N tends to be incremental rather than discontinuous, being the result of technological path-dependencies and lock-ins in industry-typical search regimes that are only slowly giving way to more boundary-crossing activities.