Defect levels in chromium-doped silicon

The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at E_c?0.11 eV, E_c?0.21 eV, E_c?0.28 eV, E_c?0.36 eV and E_c?0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at E_c?0.20 eV (donor) and E_c?0.43 eV (acceptor). A donor level was also observed at E_v + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σ_n = 4.1 × 10^?15 cm² for the upper donor at E_c?0.20 eV, σ_n = 2.0 × 10^?16 cm² for the acceptor at E_c ?0.43 eV and σ_p = 9.1 × 10^?18 cm² for the lower donor at E_v + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.     

Measurement Scheme for One‐Way Delay Variation with Detection and Removal of Clock Skew

One‐way delay variation (OWDV) has become increasingly of interest to researchers as a way to evaluate network state and service quality, especially for real‐time and streaming services such as voice‐over‐Internet‐protocol (VoIP) and video. Many schemes for OWDV measurement require clock synchronization through the global‐positioning system (GPS) or network time protocol. In clock‐synchronized approaches, the accuracy of OWDV measurement depends on the accuracy of the clock synchronization. GPS provides highly accurate clock synchronization. However, the deployment of GPS on legacy network equipment might be slow and costly. This paper proposes a method for measuring OWDV that dispenses with clock synchronization. The clock synchronization problem is mainly caused by clock skew. The proposed approach is based on the measurement of inter‐packet delay and accumulated OWDV. This paper shows the performance of the proposed scheme via simulations and through experiments in a VoIP network. The presented simulation and measurement results indicate that clock skew can be efficiently measured and removed and that OWDV can be measured without requiring clock synchronization.     

Feasibility study on cellular network analysis with patterned cell culture microdevice

In order to realize cellular network analysis on a chip-based system, our group has been developing a patterned cell culture microdevice with pillars in an array for tapping cells into space surrounded by the pillars. The pillar structures has advantages to trap both adhesive and non-adhesive cells and to precisely control positions of cells and distances between cells for understanding effects of various cell patterns on functions of a cellular network such as cell proliferation, differentiation, and network formation. In this paper, HeLa cell cultivation with the patterned cell culture microdevice having a pillar array fabricated by dry film of thick negative photoresist SU-8 on a glass substrate was executed as a feasibility study on a cellular network analysis. The results revealed that the device performance was found to be enough to culture HeLa cells for more than 48 h. In addition, relative extensibility of blocks of multiple cells compared with single cells tapped on the device was observed. Thus, the patterned cell culture microdevice proposed here could be applicable to analysis of cellular functions.     

Growth of β-FeSi2 layers deposited from a molten salt

β-FeSi₂ layers have been successfully grown using a molten salt method for the first time. It was found that single phase and homogeneous β-FeSi₂ layers with a columnar domain structure can be grown on FeSi substrates. The layer thickness was demonstrated to be controllable by the growth temperature and time, and was diffusion controlled. It was shown that the layers were void- and crack-free compared to similar layers grown on Fe substrates: this difference is explained in terms of Fe diffusion. This vacuum-free simple growth technique is useful for the fabrication of large area semiconductor devices at low cost.     

Hot-carrier effects in scaled MOS devices

A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot-carrier detrapping phenomena, 3) mechanical stress effects on hot-carrier phenomena, and 4) hot-carrier resistant device structures.In the deep-submicron region, the hot-carrier applicable voltage is less than 3 V, so AC hot-carrier effects from the dynamic operation of actual circuits should be taken into account. Despite much experimentation and analysis, there is still no universally accepted theory that explain the AC degradation mechanism. This is because the noise caused by the wiring inductance in ULSI circuits and in measurement systems screens the intrinsic AC hot-carrier effects.Here, AC hot-carrier degradation enhanced by gate pulse-induced-noise is analyzed experimentally and theoretically. After eliminating the noise problem, it is found that AC hot-carrier degradation in LDD (Lightly doped drain) and GOLD (gate-drain overlapped device) structures can be estimated based on DC degradation in terms of the effective stress time which takes the duty ratio into account. In addition, it is found that the noise is negligible when the wiring inductance is smaller that 80 nH (250 mω), which is important for future circuit design.Furthermore, hot-carrier detrapping effects, especially in p-channel MOS devices, and hot-carrier phenomena under mechanical stress are investigated experimentally to better understand the underlying hot-carrier physics. Finally, future hot-carrier resistant device structures are discussed.     

Evaluation of left atrial thrombus with computed tomography

Left atrial thrombi were evaluated with computed tomography in 23 patients with mitral valvular diseases. In three of the patients, left atrial thrombi were delineated with computed tomography and were confirmed by cardiac surgery or autopsy. The minimum size of the thrombi detected tomographically was 3.5 gm. There were no false-positive or false-negative results with computed tomography in 13 patients who subsequently underwent cardiac surgery. Computed tomography is essentially noninvasive and appears to be one of the best methods to evaluate left atrial thrombus.     

Thermodynamics of iron oxide in Fe x O-dilute CaO + Al2O3 + MgO + Fe x O slags at 1873 K

In order to determine the ferrous and ferric ion capacities: 3

Quantitative analysis of Epstein-Barr virus load by using a real-time PCR assay

BACKGROUND: Previous studies have suggested a variety of factors that may be associated with the presence of hippocampal formation (HF) atrophy in patients with complex partial seizures (CPS), including a history of complex or prolonged febrile seizures (FS), age at seizure onset, and epilepsy duration. OBJECTIVE: To determine whether epilepsy duration is related to HF atrophy. Methods: We performed MRIs on 35 patients with uncontrolled CPS who had temporal lobe ictal onset on video-EEG. None had evidence for an alien tissue lesion or extra-hippocampal seizure onset. All had a history of secondary generalization. Brain structures were drawn on consecutive images and pixel points summed from successive pictures to calculate volumes. RESULTS: Nine patients with a history of complex or prolonged FS had smaller ipsilateral HF volume and ipsilateral/contralateral ratio than did patients without a history of FS. Epilepsy duration had a significant relation to ipsilateral HF volume and ipsilateral/contralateral ratio. In a multivariate analysis, the effect of duration, but not age at onset or scan, was significant. Patients with a history of FS did not have earlier age at epilepsy onset or longer duration. Conclusions: A history of FS predicted the severity of HF atrophy in our patients. Age at onset or study was not a significant factor. Epilepsy duration, however, did have a significant effect, suggesting that, after an initial insult, progressive HF damage may occur in patients with persistent seizures.