Thickness dependence of H2 gas sensor in amorphous SnQx films prepared by ion-beam sputtering

Amorphous SnO_x films were deposited by ion-beam sputtering on sintered alumina substrates. Amorphous film sensors were prepared by annealing the films at 300° C for 2 h in air. The thickness dependence of resistivity and hydrogen gas sensitivity were measured at 150° C over the thickness range 1 to 700 nm. A resistivity maximum was observed in ultrathin films. Resistivity increased by three orders of magnitude with increasing film thickness from 0.9 to 7.4 nm and then decreased by five orders of magnitude from 7.4 to 35 nm. Ultrathin film sensors showed sensitivity maxima around a thickness of 10 nm. Sensitivity and resistivity of ultrathin films were significantly influenced by the thermal expansion coefficient and the surface state of the substrate.     

Study on grounding in the vicinity of the work site on 1000-kV power transmission line. Part 2. Electromagnetic induction and its protection

In order to clarify the grounding conditions for protecting workers on a de-energized circuit from induction from a live circuit and to determine the required current capacity of the grounding conductor for a 1,000 kV double-circuit power transmission line, the phenomena caused by electromagnetic induction resulting from a live circuit are discussed. The electromagnetic induction current I_g flowing through the body of a worker and the electromagnetic induction current I_gO flowing through the grounding conductor can be analyzed by dividing the various power line conditions into three main factors, and using electromagnetic induction current calculations for a power line of infinite length. The zone where I_g does not exceed 1 mA is within 1 km of the grounding point on the de-energized circuit owing to the grounding resistance (0.1 Ω) of the substations at the ends of the line and the difference in the phase configurations on the line when the current I₁ of the live circuit is a constant 1 kA through the line. Similarly the value of I_gO is determined by the grounding resistance of the substations at the ends of the line and the difference in the phase configurations on the line. I_gO is approximately 10 A per 1 kA of I₁. The currents I_g and I_gO produced by electromagnetic induction are additive, allowing I_g and I_gO in the actual power line to be evaluated by summation.     

Radiation grafting of α,β,β-trifluorostyrene onto poly(ethylene–tetrafluoroethylene) film by preirradiation method. I. Effects of preirradiation dose,monomer concentration,reaction temperature,and film thickness

Preirradiation grafting of α,β,β-trifluorostyrene onto poly(ethylene–tetrafluoroethylene) film was studied. The trapped radicals formed upon irradiation were able to induce graft polymerization under appropriate conditions. The influences of the grafting conditions were analyzed kinetically. The grafting rate dependency on the preirradiation dose was found to be of order 0.3, and the monomer concentrations, 1.0. The overall activation energies for this grafting were calculated to be 6.2 × 10⁴ and 9.3 × 10³ J/mol below and above 50°C. The grafting rate was found to be independent of the film thickness, which ranged from 25 to 100 μm.     

Identification of the Fas antigen in human gingiva

The Fas antigen is a cell-surface glycoprotein that mediates apoptosis from the cell surface into the cytoplasm. Polyclonal antibody (Fas D) was raised against a synthetic polypeptide selected from the extracellular part of the human Fas antigen (amino acid residues 104-114) and was used to detect the Fas antigen in human gingiva. Biopsy specimens of human gingiva were prepared, and the paraffin sections were reacted with the Fas D antibody by an immunohistochemical method. The antibody localized to the prickle-cell layer and to granular layer keratinocytes of human gingiva. Proteins were also prepared from human gingiva and subjected to SDS-PAGE, followed by Western-blotting analysis with the Fas D antibody. The antibody interacted with a band corresponding to an estimated molecular weight of 35 kDa. The incidence of the immunoreactive 35-kDa protein was detected in the gingiva of 90% of the 20 individuals examined. The Fas antigen detected in human gingiva may be related to the physiological turnover of oral mucosa.     

Biotransformation of nitroso aromatic compounds and 2-oxo acids to N-hydroxy-N-arylacylamides by thiamine-dependent enzymes in rat liver

Hydroxamate-containing tripeptide analogs resembling a reactive intermediate in glyoxalase I catalysis were prepared by solution methods and were found to be competitive inhibitors of the enzyme from Saccharomyces cerevisiae. Electronic properties of the hydroxamate functionality as well as those of the expected intermediates in the enzyme-catalyzed reaction were compared.     

Relationships of PPARgamma and PPARgamma2 mRNA levels to obesity, diabetes and hyperinsulinaemia in rhesus monkeys

OBJECTIVE: To examine the expression of peroxisome proliferator-activated receptor gamma (PPARgamma) together with CCAAT/enhancer binding protein alpha (C/EBPalpha), lipoprotein lipase (LPL) and glucose transporter (GLUT4) mRNA in adipose tissue of rhesus monkeys in relation to obesity. DESIGN: Cloning of the PPARgamma1 and gamma2 cDNAs and analysis of PPARgamma, C/EBPalpha, LPL and GLUT4 mRNA levels in the adipose tissue of lean and obese monkeys. SUBJECTS: 28 rhesus monkeys (Macaca mulatta) with a wide range of body weights (9.2-22.6 kg) and with or without type 2 diabetes. MEASUREMENTS: Sequence of PPARgamma1 and gamma2. Tissue distribution of PPARgamma1 and gamma2. The mRNA levels of PPARgamma, C/EBPalpha, LPL and GLUT4 in adipose tissue. The ratio of PPARgamma2 mRNA to total PPARgamma mRNA. RESULTS: The monkey PPARgamma2 protein showed 99% identity with the human protein. PPARgamma1 mRNA was shown to be expressed in various tissues and most abundantly in adipose tissue. PPARgamma2 existed mainly in adipose tissue. A significant correlation between the ratio of PPARgamma2 mRNA to total PPARgamma mRNA and obesity was observed, whereas total PPARgamma mRNA levels showed no significant relationships to obesity. There was also a significant relationship between the ratio of PPARgamma2 mRNA to total PPARgamma mRNA and fasting plasma insulin concentration. The mRNA levels of C/EBPalpha, LPL and GLUT4 were highly correlated to that of total PPARgamma mRNA. They were also significantly correlated to the mRNA levels of PPARgamma1 and PPARgamma2. CONCLUSIONS: The ratio of PPARgamma2 mRNA to total PPARgamma mRNA is related to obesity in the rhesus monkey and mRNA expression of PPARgamma1, PPARgamma2, C/EBPalpha, LPL and GLUT4 appear to be coordinated in vivo.     

Dietary docosahexaenoic acid increases cerebral acetylcholine levels and improves passive avoidance performance in stroke-prone spontaneously hypertensive rats

We have recently shown that inferior performance in passive avoidance task is accompanied with decreased hippocampal choline (Ch) in stroke-prone spontaneously hypertensive rats (SHRSP) compared with normotensive control Wistar-Kyoto rats (WKY). We also reported that dietary docosahexaenoic acid (DHA) suppresses the development of hypertension and stroke-related behavioral changes, resulting in the prolongation of the life span of SHRSP. In this study, we examined the effect of dietary DHA on the cerebral acetylcholine (ACh) levels and learning performance in passive avoidance tasks in SHRSP. The arachidonic acid decreased and the DHA increased in plasma lipids dose dependently with dietary DHA treatments, which decreased the systolic blood pressure in SHRSP. Dietary DHA significantly restored the significantly inferior learning performance in passive avoidance response observed in control SHRSP (DHA 0%). Furthermore, the hippocampal ACh levels were correlated positively with the total response latency in passive avoidance tasks. These results suggest that cholinergic dysfunction in the brain of control SHRSP is responsible, at least in part, for the impaired learning ability and the dietary DHA ameliorates this performance failure.