Production of in situ aluminum-titanium diboride master alloy formed by slag-metal reaction

Al-TiB₂ master alloys have received much attention in recent years owing to their potential as efficient grain refiners for aluminum foundry alloys. In this study, the process of production of master alloys was investigated to develop a low cost method, namely, slag-metal reaction. This method can be used to fabricate Al-TiB₂ master alloy in situ from the TiO₂-H₃BO₃-Na₃AlF₆ and Al system. Since the price of the raw materials is low and the technology is simple, the processing technique appears to reduce the cost of the master alloy. Because of exothermic reactions, not much energy is needed to melt materials. In this process, Titanium diboride particles were formed in situ through the reactions of TiO₂, H₃BO₃ and Na₃AlF₆. Results showed that when the aluminum melted, the condensed TiB₂ particles that formed in situ were spherical with an average diameter of 1 μm. Furthermore, these TiB₂ particles were distributed uniformly through the master alloy.     

Investigation of structural and optoelectronic properties of BaThO3

Structural and optoelectronic properties of BaThO₃ cubic perovskite are calculated using all electrons full potential linearized augmented plane wave (FP-LAPW) method. Wide and direct band gap, 5.7 eV, of the compound predicts that it can be effectively used in UV based optoelectronic devices. Different characteristic peaks in the wide UV range emerges mainly due to the transition of electrons between valance band state O-p and conduction band states Ba-d, Ba-f, Th-f and Th-d.     

64抽头LED线性亮度控制器用数字电位计控制LED亮度

采用LED但缺少微控制器或其它形式控制功能的应用可以得益于一种简单的电路,该电路能对LED的光强作手动控制.适合这种目的的器件有机械式(模拟)和电子式(数字)电位器.     

Synthesis,characterization, and supercapacitor studies of manganese (IV) oxide nanowires

One-dimensional manganese (IV) oxide (MnO₂) (～20 nm in average diameter) were synthesized by cathodic electrodeposition and heat treatment. The mechanism of electrodeposition and nanowire formation were discussed. The product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Fourier transform infrared (FT-IR). Nanowires with varying lengths and diameters were found in TEM and SEM images of the sample. The results of N₂ adsorption–desorption analysis indicated that the BET surface area of the MnO₂ nanowires was 157 m² g^?1 and the pore size distributions were 2.5 and 4.5 nm. The electrochemical performances of the prepared MnO₂ as an electrode material for supercapacitors were evaluated by cyclic voltammetry and galvanostatic charge/discharge measurements in a solution of 0.5 M Na₂SO₄. The higher specific capacitance of 318 F g^?1 and good capacity retention of 86% were achieved after 1000 charge–discharge cycles had been observed for the MnO₂ nanowires electrode.     

A secure search protocol for lightweight and low-cost RFID systems

In radio frequency identification (RFID) systems, search protocols are used to find a specific item in a large number of tagged products. These protocols should be secure against RFID attacks such as traceability, impersonation, DoS and eavesdropping. Sundaresan et al. (IEEE Trans Dependable Secure Comput, 2015) presented a server-less search protocol based on 128-bits PRNG function and claimed that their method can address all vulnerabilities of previous protocols. In this paper, we prove that Sundaresan et al.’s protocol is vulnerable to traceability attack with the high probability. In addition, we present an improved protocol to solve the proposed problem and analyze its security level informally and formally based on AVISPA tool and BAN logic.     

A Zero-Pole Reposition Based, 0.95-mW, 68-dB,Linear-in-dB,Constant-Bandwidth Variable Gain Amplifier

A variable-gain amplifier with very low power consumption and wide tuning range is presented. The operational principle of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by simulation in TSMC 0.18-μm N-well CMOS fabrication process. Owing to the novel zero-pole repositioning technique, the proposed circuit demonstrates very high frequency bandwidth of 79 MHz while drawing only 0.52 mA from 1.8 V power supply. The interesting results such as a very small core area of about 0.0025 mm² as well as a wide linear-in-dB and constant-bandwidth tuning range of 68.2 dB along with a very low power consumption of 0.95 mW are achieved utilizing standard CMOS technology. The stability of the proposed VGA is verified through transient sinusoidal response analysis. Full process, voltage and temperature (PVT) variation analysis of the circuit is also investigated through Monte Carlo and corner case analysis in order to approve the robustness of the structure. Monte Carlo simulations show standard deviation values of 4.6 dB and 78.3 MHz in gain and gain-bandwidth product, respectively. These results show that our zero-pole repositioning method would lend itself well for use in low-power and high-frequency applications, especially in high-speed automatic gain control amplifiers.     

Best Minimum Summation Scheduler for Long Term Evolution

Resource scheduling in Long Term Evolution (LTE) is an open and rising issue. It has an enormous impact on the entire system performance. Due to the nature of LTE system, the scheduler has to be designed carefully. It has to overcome many challenges such as limited processing time and the high dynamic behavior. This paper proposes a novel scheduling policy for the MAC layer in LTE called the Best Minimum Summation (BMS). The main aim of this scheduling policy is to achieve high performance with low complexity. Three sub-schedulers have been developed. Each one of these schedulers deals with scheduling table in different dimension. The first one operates on the scheduling table through the user dimension (BMS.UE); while the second one operates on the scheduling table through the resource block dimension (BMS.RB). The third scheduler operates on the scheduling table correlating both of these dimensions (BMS.2D). All of the proposed solutions were intensively evaluated in a system level simulator. Three performance metrics were used which are throughput, error rate and fairness. The results have shown that the ability of the BMS.UE scheduler to outperform other existing schedulers of LTE.     

Magnesium Ion Doping and Micro-Structural Engineering Assist NH4V4O10 as a High-Performance Aqueous Zinc Ion Battery Cathode

Layered ammonium vanadate materials exhibit significant mass-specific capacity and ion transport rate due to their small molecular weight and large ionic radius. However, the strong electrostatic interactions of Zn²⁺ and V–O bonds and the fragile ionic bonding of N-H^…O bonds hinder their development. Therefore, this work reports Mg²⁺ doping NH₄V₄O₁₀ materials accompanied by flower-like morphology to lower the migration energy barrier and inhibit amine dissolution. Owing to the 3D-flower-like morphology and the combined impact of Mg²⁺ and structural water, the binding of Zn^2+…V-O is significantly enhanced and additional ion channels were constructed. Pre-intercalated Mg²⁺ enhances the structural integrity and prevents irreversible deammoniation from obtaining excellent cyclic stability. Density functional theory (DFT) calculations show that MNVO provides a smoother Zn²⁺ diffusion path with a lower migration barrier. Benefited from these advantages, the MNVO cathode exhibits a high specific capacity of 410 mAh g⁻¹ at 0.1 A g⁻¹, satisfactory cyclic stability (90.2 % capacity retention at 10 A g⁻¹ after 5000 cycles), and capable rate ability (118 mAh g⁻¹ at 25 A g⁻¹) within 0.4-1.5 V. Furthermore, the zinc ion storage mechanism in the MNVO cathode is investigated through multiple analyses.     

Fabrication of porous ZnO via electrochemical etching using 10 wt% potassium hydroxide solution

We described the fabrication of porous ZnO using the electrochemical etching method. ZnO thin films deposited by radiofrequency sputtering were etched electrochemically using 10 wt% KOH solution as an etching medium to obtain porous ZnO surface structure. A constant voltage of 15 V was applied to enhance the etching process. The etched samples were then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectroscopy to examine their structural and optical properties. XRD spectra showed that by performing the electrochemical etching process, porous ZnO could be obtained without severely deteriorating the crystallinity of the samples. Moreover, SEM characterization revealed that hillock-type porous ZnO was fabricated successfully. In addition, the cross-sectional SEM images revealed that there were only minimal changes in the layer thickness after the ZnO had been etched for various lengths of time. This finding shows the dominance of the vertical etching process. Notably, the intensity of PL spectra increased and the PL excitation peak exhibited a red shift trend as the etching time increased. These observations are due to the increase of the surface to volume ratio of the ZnO surface and the strain relaxation along the dislocation and grain boundary.