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101.
Millisecond pulsars: nature's most stable clocks 总被引:8,自引:0,他引:8
Taylor J.H. Jr. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1991,79(7):1054-1062
The author describes the role pulsars might play in time and frequency technology. Millisecond pulsars are rapidly rotating neutron stars: some 20 km in diameter, 1.4 times as massive as the Sun, and spinning as fast as several thousand radians per second. Radio noise generated in a pulsar's magnetosphere by a highly beamed process is detectable over interstellar distances, as a periodic sequence of pulses. High-precision comparisons between pulsar time and terrestrial atomic time show that over intervals of several years, some millisecond pulsars have fractional stabilities comparable to those of the best atomic clocks. The author briefly reviews the physics of pulsars, discusses the techniques of pulsar timing measurements, and summarizes the results of careful studies of pulsar stabilities 相似文献
102.
Vanderby R. Jr. Masters G.P. Bowers J.R. Graf B.K. 《IEEE transactions on bio-medical engineering》1991,38(10):1040-1042
A device has been designed and fabricated to measure the cross-sectional area of soft connective tissues ex vivo. It consists of two displacement transducers; one sensing tissue thickness and the other sensing width. Outputs are recorded (via an analog to digital interface) using a personal computer. Numerical integration of a thickness versus width plot computes cross-sectional area. This plot also provides a quality check of acquired data. This device has been successfully used in biomechanical studies of rabbit patellar tendons, rat medial collateral ligaments, and dissected specimens of human fascia. 相似文献
103.
Feld S.A. Beyette F.R. Jr. Hafich M.J. Lee H.Y. Robinson G.Y. Wilmsen C.W. 《Electron Devices, IEEE Transactions on》1991,38(11):2452-2459
A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR 相似文献
104.
William E Acree Jr Michael H Abraham 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》2006,81(8):1441-1446
The contentions made in an earlier paper [J Chem Technol Biotechnol 80 : 133–137 (2005)] that the coefficients of the Abraham solvation equation do not provide meaningful information on the molecular properties of ionic liquid solvents is refuted. The objections noted in the earlier paper disappear when the solvation equation model is correctly applied to the experimental data. It is further shown that the coefficients of the Abraham solvation equations can be used to characterize ionic liquids and can be used to select solvents for the solubility of gaseous solutes. Copyright © 2006 Society of Chemical Industry 相似文献
105.
The 320C30 is a fast processor with a large memory space and floating-point-arithmetic capabilities. The authors describe the 320C30 architecture in detail, discussing both the internal organization of the device and the external interfaces. They also explain the pipeline structure, addressing software-related issues and constructs, and examine the development tools and support. Finally, they present examples of applications. Some of the major features of the 320C30 are: a 60-ns cycle time that results in execution of over 16 million instructions per second (MIPS) and over 33 million floating-point operations per second (Mflops); 32-bit data buses and 24-bit address buses for a 16M-word overall memory space; dual-access, 4 K×32-bit on-chip ROM and 2 K×32-bit on-chip RAM; a 64×32-bit program cache; a 32-bit integer/40-bit floating-point multiplier and ALU; eight extended-precision registers, eight auxiliary registers, and 23 control and status registers; generally single-cycle instructions; integer, floating-point, and logical operation; two- and three-operand instructions; an on-chip DMA controller; and fabrication in 1-μm CMOS technology and packaging in a 180-pin package. These facilitate FIR (finite impulse response) and IIR (infinite impulse response) filtering, telecommunications and speech applications, and graphics and image processing applications 相似文献
106.
The essential elements for a system of customer direct access to electricity supplies are already in place, with protocols for existing pool operation and inter-system coordination, as well as the Western System Power Pool market. Extending our experience with gas and electricity wholesale markets to direct access for large retail electricity customers, then to small customers, is achievable now. 相似文献
107.
Demir H.V. Jun-Fei Zheng Sabnis V.A. Fidaner O. Hanberg J. Harris J.S. Jr. Miller D.A.B. 《Semiconductor Manufacturing, IEEE Transactions on》2005,18(1):182-189
This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate. 相似文献
108.
D. D. Evanoff Jr. S. E. Hayes Y. Ying G. H. Shim J. R. Lawrence J. B. Carroll R. D. Roeder J. M. Houchins C. F. Huebner S. H. Foulger 《Advanced materials (Deerfield Beach, Fla.)》2007,19(21)
Photonic crystals based on electrostatically‐stabilized colloidal arrays dispersed in a liquid medium are of interest to materials scientists partly because of the optical tuning afforded to theses systems with a variation in interparticle distance. On p. 3507, Stephen Foulger and co‐workers from Clemson University, USA report on a general strategy for the preparation of well‐defined and regioselectively functionalized ordered colloidal particles through the exploitation of “click” chemistry. Click transformations have found utility in the synthesis and/or functionalization of a range of systems. In addition, the solvochromic tuning of the ordered arrays is employed to modify the emission spectra of the surface‐attached photoluminescent dyes. 相似文献
109.
Baschnagel Joseph S.; Hawk Larry W. Jr.; Colder Craig R.; Richards Jerry B. 《Canadian Metallurgical Quarterly》2007,121(6):1372
In humans, prepulse inhibition (PPI) of startle is greater during attended prestimuli than it is during ignored prestimuli, whereas in rats, most work has focused on passive PPI, which does not require attention. In the work described in this article, researchers developed a paradigm to assess attentional modification of PPI in rats using motivationally salient prepulses. Water-deprived rats were either conditioned to attend to a conditioned stimulus (CS; 1-s, 7-dB increase in white noise) paired with water (CS+ group), or they received uncorrelated presentations of white noise and water (CSo group). After 10 conditioning sessions, startle probes (50 ms, 115 dB) were introduced, with the CS serving as a continuous prepulse. Three experiments examined PPI across a range of prepulse intensities (4-10 dB) and stimulus onset asynchronies (SOAs; 30-960 ms). PPI was consistently reduced in the CS+ group, particularly with a 10-dB prepulse and a 60-ms SOA. Thus, PPI in rats differed between attended and ignored prestimuli, but the effect was reversed in the results of research with humans. A fourth study eliminated the group difference by reversing the CS-water contingency. Methodological and motivational hypotheses regarding the current findings are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
110.
R. Iris Bahar Dan Hammerstrom Justin Harlow William H. Joyner Jr. Clifford Lau Diana Marculescu Alex Orailoglu Massoud Pedram 《Computer》2007,40(1):25-33
Although nanoelectronics won't replace CMOS for some time, research is needed now to develop the architectures, methods, and tools to maximally leverage nanoscale devices and terascale capacity. Addressing the complementary architectural and system issues involved requires greater collaboration at all levels. The effective use of nanotechnology calls for total system solutions 相似文献