刍议历史地段插建建筑形态设计

该文依据历史地段插建建筑与其所处环境之间的三种位置关系,结合具体案例对其形态设计策略进行详细探讨。     

Amplifier linearization using compact microstrip resonant cell-theory and experiment

This paper presents a novel technique for reducing the intermodulation distortions (IMDs) in power amplifiers. In this method, both second- and third-harmonic components generated by the transistor are reflected back simultaneously by the compact microstrip resonant cell (CMRC) at the input port with proper phases to mix with the fundamental signal for the reduction of IMDs. A rigorous mathematical analysis on the effectiveness of multiharmonic reflections has been formulated and derived using the Volterra series. Moreover, the delay mismatch factor of the proposed method is analytically studied and the result shows that a better tolerance to the delay error can be achieved by using CMRC circuitry. Standard two-tone test measurements reveal 32- and 22-dB reductions for the third-order IMD and fifth-order IMD, respectively, without affecting the fundamental signal at 2.45 GHz. Meanwhile, the proposed approach gives a peak power added efficiency of 53% with 11.5 dB transducer gain and 15 dBm output power for a single-stage SiGe bipolar junction transistor. The adjacent channel power ratio (ACPR) is -55dBc for a data rate of 384-kb/s quadrature phase shift keyed modulated signal with 2-MHz spanning bandwidth, and this ACPR is maintained for a broad range of output power level.     

FVF LDO regulator with dual dynamic-load composite gain stage

A low-voltage output-capacitorless low-dropout regulator using dual dynamic-load composite gain stage for flipped voltage follower topology is presented. It also incorporates a delay discharge circuit which aims to reduce the long discharge time arising from the large capacitive load, thus achieving the overshoot time reduction and sustaining fast transient characteristic when driving low-power digital system with internal heavy capacitive load requirement. The regulator can support a minimum of 0.75 V input voltage with 0.5 V output voltage. It consumes 49.4 µA whilst maintaining the stability for a capacitance load range from 470 pF to 10 nF. For a current load transient from 0 to 10 mA with 200 ps edge time, the settling time is 0.38 µs for the load capacitance of 3 nF. The obtained transient figure-of-merit is 0.42 mV. This transient metric outperforms the representative prior-art reported works.     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

A Versatile Iterative Framework for the Reconstruction of Bandlimited Signals from Their Nonuniform Samples

In this paper, we study a versatile iterative framework for the reconstruction of uniform samples from nonuniform samples of bandlimited signals. Assuming the input signal is slightly oversampled, we first show that its uniform and nonuniform samples in the frequency band of interest can be expressed as a system of linear equations using fractional delay digital filters. Then we develop an iterative framework, which enables the development and convergence analysis of efficient iterative reconstruction algorithms. In particular, we study the Richardson iteration in detail to illustrate how the reconstruction problem can be solved iteratively, and show that the iterative method can be efficiently implemented using Farrow-based variable digital filters with few general-purpose multipliers. Under the proposed framework, we also present a completed and systematic convergence analysis to determine the convergence conditions. Simulation results show that the iterative method converges more rapidly and closer to the true solution (i.e. the uniform samples) than conventional iterative methods using truncation of sinc series.     

Understanding the Meniscus‐Guided Coating Parameters in Organic Field‐Effect‐Transistor Fabrications

Meniscus‐guided coating (MGC) is mainly applicable on the soluble organic semiconductors with strong π–π overlap for achieving single‐crystalline organic thin films and high‐performance organic field‐effect‐transistors (OFETs). In this work, four elementary factors including shearing speed (v), solute concentration (c), deposition temperature (T), and solvent boiling point (T_b) are unified to analyze crystal growth behavior in the meniscus‐guided coating. By carefully varying and studying these four key factors, it is confirmed that v is the thickness regulation factor, while c is proportional to crystal growth rate. The MGC crystal growth rate is also correlated to latent heat (L) of solvents and deposition temperature in an Arrhenius form. The latent heat of solvents is proportional to T_b. The OFET channels grown by the optimized MGC parameters show uniform crystal morphology (Roughness R_q < 0.25 nm) with decent carrier mobilities (average µ = 5.88 cm² V^?1 s^?1 and highest µ = 7.68 cm² V^?1 s^?1). The studies provide a generalized formula to estimate the effects of these fabrication parameters, which can serve as crystal growth guidelines for the MGC approach. It is also an important cornerstone towards scaling up the OFETs for the sophisticated organic circuits or mass production.     

Iterative design of variable fractional-order IIR differintegrators

In this paper, the variable fractional-order (VFO) differintegrator is designed based on IIR-typed Farrow structure. The stability of the designed VFO IIR differintegrator is achieved by incorporating a constrained function into the objective error function. But the minimization of the original objective error function is a highly nonlinear problem, so an iterative quadratic method is proposed to overcome it. Comparing with the design based on FIR-typed Farrow structure, several designed examples, including a VFO differintegrator, a pure VFO differentiator and a pure VFO integrator, are presented to demonstrate the effectiveness of the proposed method.     

BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs

In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-/spl kappa/ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3/spl times/10/sup 7/cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature =85/spl deg/C, humidity =85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-/spl kappa/ BCB layer is attractive for millimeter-wave circuit applications.     

Doping Effects on Thermoelectric Properties in the Mg2Sn System

A weak point of Mg₂X thermoelectrics is the absence of a p-type composition, which motivates research into the Mg₂Sn system. Mg₂Sn thermoelectrics were fabricated by a vacuum melting method and a spark plasma sintering process. As a result, Mg₂Sn single phases were acquired in a wide range of Mg-to-Sn atomic ratios (67:33 to 71:29), showing slightly different thermoelectric characteristics. However, the thermoelectric properties of the undoped system were not sufficient for application in commercial production. To maximize the p-type characteristics, many atoms [Ni (VIIIA), Cu (IB), Ag (IB), Zn (IIB), and In (IIIB)] were doped into the Mg₂Sn phase. Among them, the power factor values increased only in the Ag-doped case. Ag-doping resulted in a power factor that was more than 10 times larger than the value in the undoped case. This result could be important for developing p-type polycrystalline thermoelectrics in the Mg₂X (X?=?Si, Sn) system. However, other atoms [Ni (VIIIA), Cu (IB), Zn (IIB), and In (IIIB)] were not determined to act as acceptor atoms. The maximum ZT value for the Ag-doped Mg₂Sn thermoelectric was more than 0.18, which is comparable to the value for the n-type Mg₂Si system.     

Uniform Concentric Circular Arrays With Frequency-Invariant Characteristics—Theory, Design, Adaptive Beamforming and DOA Estimation

This paper proposes a new digital beamformer for uniform concentric circular arrays (UCCAs) having nearly frequency-invariant (FI) characteristics. The basic principle is to transform the received signals to the phase mode and remove the frequency dependency of the individual phase mode through the use of a digital beamforming or compensation network. As a result, the far-field pattern of the array, which is governed by a set of variable beamformer weights, is electronically steerable, and it is approximately invariant over a wider range of frequencies than conventional uniform circular arrays (UCAs). This also makes it possible to design the compensation network and the beamformer weights separately. The design of the compensation network is formulated as a second order cone programming (SOCP) problem and is solved optimally for minimax criterion. By employing the beamspace approach using the outputs of a set of fixed UCCA frequency-invariant beamformers (FIBs), a new beamspace MUSIC algorithm is proposed for estimating the direction-of-arrivals (DOAs) of broadband sources. Since the beampatterns of the UCCA-FIB is approximately invariant with frequency and is governed by a small set of weights, a very efficient adaptive beamformer using the minimum variance beamforming (MVB) approach can be developed. Simulation results using broadband Gaussian and multisinusoidal inputs show that the proposed adaptive UCCA-FIB is numerically better conditioned than the conventional broadband tapped-delay-line-based adaptive beamformers, due to the FI property and significantly fewer numbers of adaptive parameters. Consequently, a higher output signal-to-inference-plus-noise ratio over the conventional tapped-delay-line approach is observed. The usefulness of the proposed UCCA-FIB in broadband DOA estimation is also verified by computer simulation