A simple simultaneous geometric and intensity correction method for echo-planar imaging by EPI-based phase modulation

A technique, based on Echo planar imaging (EPI)-based phase modulation factor maps, is described for correction of EPI distortions resulting from field inhomogeneity. In this paper, a phase modulation factor was employed to remove the distortions. The phase modulation factor was obtained experimentally by collecting EPI images with a spin-echo (TE) spacing, deltaTE, equal to the inter-echo time interval, T(i). Then, the distortions resulting from the field inhomogeneity were removed by modulating the kappa-space data with the phase modulation factor. One of the advantages of this method is that it requires only a few extra scans to collect the information on field inhomogeneity. The proposed method does not require a phase unwrapping procedure for field inhomogeneity correction and, hence, is easier to implement, compared to other techniques. In addition, it corrects geometric distortion as well as intensity distortions simultaneously, which is robust to external noise or estimation error in severely distorted images. In this work, we also compared the proposed technique with others including, a) interpolation method with EPI-based displacement maps, and b) modulation method with phase modulation factor maps generated from spin-echo images. The results suggest the proposed technique is superior in correcting severely distorted images.     

Efficient electron beam condensing for low-energy microcolumn lithography

Low-energy electron beam lithography has been performed with a microcolumn by adopting a new technique that condenses the electron beam efficiently. To increase the probe current while keeping the kinetic energy of electrons sufficiently low, the negative or positive bias has been applied to the accelerator electrode, which reduces the divergence of the electron beam and hence makes more electrons pass through the microcolumn. With this technique, the probe current more than 1 nA has been achieved, which is large enough for the practical application of microcolumn lithography even when the kinetic energy of electrons is as low as 160 eV. The results of microcolumn lithography by using the condensed electron beam with a low-energy of 160 and 327 eV are also presented.     

A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byteeffective program speed

Emerging application areas of mass storage flash memories require low cost, high density flash memories with enhanced device performance. This paper describes a 64 Mb NAND flash memory having improved read and program performances. A 40 MB/s read throughput is achieved by improving the page sensing time and employing the full-chip burst read capability. A 2-μs random access time is obtained by using a precharged capacitive decoupling sensing scheme with a staggered row decoder scheme. The full-chip burst read capability is realized by introducing a new array architecture. A narrow incremental step pulse programming scheme achieves a 5 MB/s program throughput corresponding to 180 ns/Byte effective program speed. The chip has been fabricated using a 0.4-μm single-metal CMOS process resulting in a die size of 120 mm² and an effective cell size of 1.1 μm²     

Asymmetric X-junction thermooptic switches based on fluorinatedpolymer waveguides

Thermooptic 2×2 switches based on low-loss fluorinated polymer waveguides have been demonstrated. For the waveguide possessing a low-loss around the 1.55-μm wavelength, crosslinkable fluorinated poly(arylene ethers) (FPAE) is developed as a core material and perfluorocyclobutane (PFCB) is used as a cladding material. To enhance the fabrication tolerance and to achieve a low switching power, asymmetric X-junctions with a Mach-Zehnder interferometer are exploited for the polymeric waveguide switches. An inverted rib waveguide structure is fabricated by filling up the etched groove on a lower cladding with the core polymer. The switch exhibits a crosstalk of less than -20 dB, a switching power of 10 mW, and an insertion loss of 4.5 dB     

A comparison of two micromachined inductors (bar- and meander-type)for fully integrated boost DC/DC power converters

Two micromachined integrated inductors (bar- and meander-type) are realized on a silicon wafer by using modified, IC-compatible, multilevel metallization techniques. Efforts are made to minimize both the coil resistance and the magnetic reluctance by using thick electroplated conductors, cores, and vias. In the bar-type inductor, a 25-μm thick nickel-iron permalloy magnetic core bar is wrapped with 30-μm thick multilevel copper conductor lines. For an inductor size of 4 mm×1.0 mm×110 μm thickness having 33 turns of multilevel coils, the achieved specific inductance is approximately 30 nH/mm² at 1 MHz. In the meander-type inductor, the roles of conductor wire and magnetic core are switched, i.e., a magnetic core is wrapped around a conductor wire. This inductor size is 4 mm×1.0 mm×130 μm and consists of 30 turns of a 35-μm thick nickel-iron permalloy magnetic core around a 10-μm thick sputtered aluminum conductor lines. A specific inductance of 35 nH/mm² is achieved at a frequency of 1 MHz. Using these two inductors, switched DC/DC boost converters are demonstrated in a hybrid fashion. The obtained maximum output voltage is approximately double an input voltage of 3 V at switching frequencies of 300 kHz and a duty cycle of 50% for both inductors, demonstrating the usefulness of these integrated planar inductors     

Integrated optical high-voltage sensor based on a polymeric Y-branch digital optical switch

An integrated optical high-voltage sensor is realized by fabricating a Y-branch digital optical switch in an electrooptic polymer. The measurement of ac high voltage is accomplished by using the linear transfer characteristics of the switch at zero bias voltage. Furthermore, the logarithmic ratio between the optical powers of two output ports may be used to remove the noise caused by the power fluctuations of a light source. The polymeric high-voltage sensor requires no electrical dc biases and no voltage dividers. It is also wavelength insensitive and fabrication-tolerant due to its use of mode evolution effects instead of interference. The measured sensing voltage range is as large as ac 500-V peak-to-peak.     

A compact-size microstrip spiral resonator and its application to microwave oscillator

This letter presents a compact size microstrip spiral resonator and its application to a low phase noise oscillator. This resonator has stopband characteristics to be used in the series feedback oscillator topology. The whole circuit area of the proposed resonator is within 1/10 wavelength, which results in the reduction of the circuit area and cost. A 10-GHz oscillator incorporated with this resonator was designed, fabricated and measured. It shows low phase noise performance of -95.4-dBc/Hz at 100 kHz offset.     

A novel hybrid silica wide-band amplifier covering S+C+L bands with 105-nm bandwidth

We report a novel hybrid optical amplifier covering S+C+L bands with 105-nm total bandwidth using a silica fiber. The principle of amplification is based on the stimulated radiative transition of Er-ions for C-band and on the stimulated Raman scattering for S- and L-band, respectively. In this letter, we analyze the amplification characteristics for two types of active fiber mediums through numerical simulation. One is a silica fiber configured with Er-doped cladding and Ge-doped core and the other is a medium consisting of Er-doped fiber and dispersion-compensating fiber. By optimizing parameters such as fiber length and pump power, we newly achieve wide-band amplification with 105-nm bandwidth showing a flat gain characteristic over the entire S+C+L bands.     

A Framework for MPEG‐4 Contents Delivery over DMB

Digital Multimedia Broadcasting (DMB) is an upcoming standard in Korea used to provide mobile multimedia broadcasting service based on the Eureka‐147 Digital Audio Broadcasting (DAB) system. The current dominant multimedia coding standard, MPEG‐4, is foreseen to play an important role in forthcoming DMB services. However, the current approaches for transporting MPEG‐4 content over DMB networks are not optimized. To address this issue we propose a novel MPEG‐4 stream multiplexer, called M4SMux, which provides better stream multiplexing and delivery over DMB networks. M4SMux features an MPEG‐4 elementary‐stream interleaving mechanism that reduces the multiplexing overhead and a multiplex configuration mechanism that utilizes M4SLinkTable for easy content access. In addition, we propose an error correction method which enhances transport efficiency.     

Fully aromatic polyimide gate insulators with low temperature processability for pentacene organic thin-film transistors

This paper demonstrates the effects of the imidization ratio of polyimide gate insulators on the performance of organic thin-film transistors (OTFTs). We report the synthetic results of polyimide films imidized at a temperature of 200 °C along with an easily removed organic base catalyst (1,8-diazabicyclo[5.4.0]undec-7-ene, DBU), and their application in gate insulators of organic thin-film transistors. The degree of imidization increased to almost 100% after a thermal treatment at 200 °C for 40 min in the presence of DBU. The performance of the pentacene OTFT dramatically improved by using low temperature cured polyimide film as the gate insulator.