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排序方式: 共有2159条查询结果,搜索用时 15 毫秒
31.
Arun Ravindran Eva Vidal Seoung-Jae Yoo Kishore Ramarao Mohammed Ismail 《Analog Integrated Circuits and Signal Processing》2004,38(2-3):161-174
A novel CMOS variable gain amplifier operating on current signals with a dB-linear gain control is presented. The gain control is achieved by multiplying a digitally synthesized exponentially varying control current signal by a differential input signal in the current domain. A current amplifier at the output sets the gain to the desired level. Current-mode operation allows for a reduced supply voltage by minimizing the voltage swing at the low impedance nodes of the circuit. Multiple circuit realizations for various blocks are presented allowing for designs meeting different constraints. Experimental realization of the variable gain amplifier shows the validity of the presented approach. 相似文献
32.
Rafael Schmitt Markus Kubicek Eva Sediva Morgan Trassin Mads C. Weber Antonella Rossi Herbert Hutter Jens Kreisel Manfred Fiebig Jennifer L. M. Rupp 《Advanced functional materials》2019,29(5)
Memristive devices based on mixed ionic–electronic resistive switches have an enormous potential to replace today's transistor‐based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains unclear however how ionic carriers are propagated in amorphous oxide films at high local electric fields. By using memristive model devices based on LaFeO3 with either amorphous or epitaxial nanostructures, we engineer the structural local bonding units and increase the oxygen‐ionic diffusion coefficient by one order of magnitude for the amorphous oxide, affecting the resistive switching operation. We show that only devices based on amorphous LaFeO3 films reveal memristive behavior due to their increased oxygen vacancy concentration. We achieved stable resistive switching with switching times down to microseconds and confirm that it is predominantly the oxygen‐ionic diffusion character and not electronic defect state changes that modulate the resistive switching device response. Ultimately, these results show that the local arrangement of structural bonding units in amorphous perovskite films at room temperature can be used to largely tune the oxygen vacancy (defect) kinetics for resistive switches (memristors) that are both theoretically challenging to predict and promising for future memory and neuromorphic computing applications. 相似文献
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Yixuan Jia Christoph A. Spiegel Alexander Welle Stefan Heißler Elaheh Sedghamiz Modan Liu Wolfgang Wenzel Maximilian Hackner Joachim P. Spatz Manuel Tsotsalas Eva Blasco 《Advanced functional materials》2023,33(39):2207826
Manufacturing programmable materials, whose mechanical properties can be adapted on demand, is highly desired for their application in areas ranging from robotics, to biomedicine, or microfluidics. Herein, the inclusion of dynamic and living bonds, such as alkoxyamines, in a printable formulation suitable for two-photon 3D laser printing is exploited. On one hand, taking advantage of the dynamic covalent character of alkoxyamines, the nitroxide exchange reaction is investigated. As a consequence, a reduction of the Young´s Modulus by 50%, is measured by nanoindentation. On the other hand, due to its “living” characteristic, the chain extension becomes possible via nitroxide mediated polymerization. In particular, living nitroxide mediated polymerization of styrene results not only in a dramatic increase of the volume (≈8 times) of the 3D printed microstructure but also an increase of the Young's Modulus by two orders of magnitude (from 14 MPa to 2.7 GPa), while maintaining the shape including fine structural details. Thus, the approach introduces a new dimension by enabling to create microstructures with dynamically tunable size and mechanical properties. 相似文献
35.
Eitan Oksenberg Calvin Fai Ivan G. Scheblykin Ernesto Joselevich Eva L. Unger Thomas Unold Charles Hages Aboma Merdasa 《Advanced functional materials》2021,31(22):2010704
Understanding energy transport in metal halide perovskites is essential to effectively guide further optimization of materials and device designs. However, difficulties to disentangle charge carrier diffusion, photon recycling, and photon transport have led to contradicting reports and uncertainty regarding which mechanism dominates. In this study, monocrystalline CsPbBr3 nanowires serve as 1D model systems to help unravel the respective contribution of energy transport processes in metal-halide perovskites. Spatially, temporally, and spectrally resolved photoluminescence (PL) microscopy reveals characteristic signatures of each transport mechanism from which a robust model describing the PL signal accounting for carrier diffusion, photon propagation, and photon recycling is developed. For the investigated CsPbBr3 nanowires, an ambipolar carrier mobility of μ = 35 cm2 V−1 s−1 is determined, and is found that charge carrier diffusion dominates the energy transport process over photon recycling. Moreover, the general applicability of the developed model is demonstrated on different perovskite compounds by applying it to data provided in previous related reports, from which clarity is gained as to why conflicting reports exist. These findings, therefore, serve as a useful tool to assist future studies aimed at characterizing energy transport mechanisms in semiconductor nanowires using PL. 相似文献
36.
We study finitely generated and finite systems defined by linear partial difference equations with constant coefficients in a Noetherian ring. The two notions coincide for finite rings, and we show that all finite systems exhibit certain periodicity properties. For the particular case of systems over the ring of integers modulo m?>?1, which is important in coding theory, a method is given for determining the number of trajectories, using Gr?bner basis techniques. 相似文献
37.
Eva Pellicer Moisés Cabo Emma Rossinyol Pau Solsona Santiago Suriñach Maria Dolors Baró Jordi Sort 《Advanced functional materials》2013,23(7):900-911
Transition metal (Co, Fe, Mn)‐doped In2O3?y mesoporous oxides are synthesized by nanocasting using mesoporous silica as hard templates. 3D ordered mesoporous replicas are obtained after silica removal in the case of the In‐Co and In‐Fe oxide powders. During the conversion of metal nitrates into the target mixed oxides, Co, Fe, and Mn ions enter the lattice of the In2O3 bixbyite phase via isovalent or heterovalent cation substitution, leading to a reduction in the cell parameter. In turn, non‐negligible amounts of oxygen vacancies are also present, as evidenced from Rietveld refinements of the X‐ray diffraction patterns. In addition to (In1?xTMx)2O3?y, minor amounts of Co3O4, α‐Fe2O3, and MnxOy phases are also detected, which originate from the remaining TM cations not forming part of the bixbyite lattice. The resulting TM‐doped In2O3?y mesoporous materials show a ferromagnetic response at room temperature, superimposed on a paramagnetic background. Conversely, undoped In2O3?y exhibits a mixed diamagnetic‐ferromagnetic behavior with much smaller magnetization. The influence of the oxygen vacancies and the doping elements on the magnetic properties of these materials is discussed. Due to their 3D mesostructural geometrical arrangement and their room‐temperature ferromagnetic behavior, mesoporous oxide‐diluted magnetic semiconductors may become smart materials for the implementation of advanced components in spintronic nanodevices. 相似文献
38.
Clara Guglieri Eva Céspedes Ana Espinosa María Ángeles Laguna‐Marco Noemi Carmona Yukiharu Takeda Tetsuo Okane Tetsuya Nakamura Mar García‐Hernández Miguel Ángel García Jesús Chaboy 《Advanced functional materials》2014,24(14):2094-2100
Discoveries of room‐temperature ferromagnetism (RTFM) in semiconductors hold great promise in future spintronics technologies. Unfortunately, this ferromagnetism remains poorly understood and the debate concerning the nature, carrier‐mediated versus defect‐mediated, of this ferromagnetism in semiconducting oxides is still open. Here, by using X‐ray absorption (XAS) and X‐ray magnetic circular dichroism (XMCD), it is demonstrated that the oxygen ions have a ferromagnetic response in different ZnO‐based compounds showing RTFM behavior: ZnO nanoparticles capped with organic molecules and ZnO/ZnS heterostructures. These results demonstrate the intrinsic occurrence of RTFM in these systems, and point out that it is not related to the metallic cation but it relays on the conduction band of the semiconductor. 相似文献
39.
40.
The influence of extraction of reinforced fibres on surface properties and the curing reaction of epoxy resin matrix in composites were investigated. With increasing fibre surface polarity, as the result of the extraction, the resin wettability was improved and the reaction rate of curing of the epoxy resin matrix increased. The wettability and the reaction rate oppositely decreased with decreasing fibre surface polarity. 相似文献