A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-/spl mu/m CMOS

A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth-order baseband channel select filters with programmable gain. Quadrature local oscillator (LO) signals are generated on chip in a frequency divider flip-flop. An external interstage filter between the LNAs rejects transmitter leakage to relax demodulator linearity requirements. A low-voltage demodulator topology improves linearity as well as demodulator output pole accuracy. The active-RC baseband filter uses a programmable servo loop for offset compensation and provides an adjacent channel rejection of 39 dB. Programmable gain over 71-dB range in 1-dB steps is merged with the filter to maximize dynamic range. An automatic on-chip frequency calibration scheme provides better than 1.5% corner frequency accuracy. The receiver is integrated in a 0.13-/spl mu/m CMOS process with metal-insulator-metal (MIM) capacitors. Measured receiver performance includes a 6.5-dB noise figure, IIP2 of +27 dBm, and IIP3 of -8.6 dBm. Power consumption is 45 mW.     

Oxidative degradation of polyamide reverse osmosis membranes: Studies of molecular model compounds and selected membranes

Selected aromatic amides were used to model the chemical reactivity of aromatic polyamides found in thin‐film composite reverse osmosis (RO) membranes. Chlorination and possible amide bond cleavage of aromatic amides upon exposure to aqueous chlorine, which can lead to membrane failure, were investigated. Correlations are made of the available chlorine concentration, pH, and exposure time with chemical changes in the model compounds. From the observed reactivity trends, insights are obtained into the mechanism of RO membrane performance loss upon chlorine exposure. Two chemical pathways for degradation are shown, one at constant pH and another that is pH‐history dependent. An alternative strategy is presented for the design of chlorine‐resistant RO membranes, and an initial performance study of RO membranes incorporating this strategy is reported. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 1173–1184, 2003     

Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge.     

Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Operating Penalties in Single-Fiber Operation 10-Gb/s, 1024-Way Split, 110-km Long-Reach Optical Access Networks

We report for the first time optical signal-to-noise penalties which lead to performance degradations in single-fiber long-reach optical access networks when compared to identical dual-fiber systems. A simplified architecture, with reduced optical amplifier count compared to previous work, for single-fiber operation of a symmetrical 10-Gb/s, 1024-way split, 110-km long-reach optical access network is presented and demonstrated. In addition, a possible solution to remove the optical signal-to-noise penalty is suggested     

Organic Nanoparticles: Preparation,Self‐Assembly,and Properties

The strong tendency of organic nanoparticles to rapidly self‐assemble into highly aligned superlattices at room temperature when solution‐cast from dispersions or spray‐coated directly onto various substrates is described. The nanoparticle dispersions are stable for years. The novel precipitation process used is believed to result in molecular distances and alignments in the nanoparticles that are not normally possible. Functional organic light‐emitting diodes (OLEDs)—which have the same host–dopant emissive‐material composition—with process‐tunable electroluminescence have been built with these nanoparticles, indicating the presence of novel nanostructures. For example, only changing the conditions of the precipitation process changes the OLED emission from green light to yellow.     

Occurrence and characterisation of the hydrogen-evolving enzyme in Frankia sp.

An increase in hydrogen evolution from the hydrogen-evolving enzyme in the actinomycete Frankia was recorded in the presence of nickel. Immunogold localisation analysis of the intracellular distribution of hydrogenase proteins indicated that they were evenly distributed in the membranes and cytosol of both hyphae and vesicles. In addition, molecular characterisation of the hydrogen-evolving enzyme at the proteomic level, using two-dimensional gel electrophoresis combined with mass spectrometry, confirmed that the Frankia hydrogen-evolving enzyme is similar to the cyanobacterial bidirectional hydrogenase of Anabena siamensis.