Field enhancement factor and field emission from a hemi-ellipsoidal metallic needle

We present an exact solution for the electrostatic field between a metallic hemi-ellipsoidal needle on a plate (as a cathode) and a flat anode. The basic idea is to replace the cathode by a linearly charged thread in a uniform electric field and to use a set of “image” charges to reproduce the anode. We calculate the field enhancement factor on the needle surface and ponderomotive force acting on the needle. Using the Fowler–Nordheim theory we obtain an exact analytical formula for the total current.     

Numerical study of the effect of the doping profile on the threshold voltage of narrow-channel MOS transistor

A two-dimensional MOS process and device simulator, called IMPEDANCE, is used to study the influence of various doping profiles of stopper and channel implantations on the threshold voltage of narrow-channel MOS transistor (made with LOCOS isolation technology). For enhancement-mode transistors without channel implantation the lateral spread of the stopper implantation is the main factor for the threshold voltage increase with decreasing channel width. However the increase of the channel implantation dose reduces the dependence of the threshold voltage on the width especially at higher ion energies. In case of depletion-mode transistors the dependence of the threshold voltage on width is stronger owing to: (1) the existence of a lateral p-n junction between the channel and the stopper region and (2) the weaker gate control of the channel carriers.     

3 μm laser performance of Ho:YAlO3 andNd,Ho:YAlO3

A study of the 3-μm laser transitions in Ho:YAlO₃ and Nd,Ho:YAlO₃ using both flashlamp and laser pumping is discussed. Fluorescence measurements for the Nd,Ho:YAlO₃ rod indicate that the neodymium is effective in quenching the lower holmium laser level and in sensitizing the upper level. Intracavity laser pumping of Ho:YAlO₃ produced laser lines at 2.92 and 2.85 μm and demonstrated high efficiency     

Post-subsidence deformations of loess soils

Translated from Osnovaniya, Fundamenty i Mekhanika Gruntov, No. 4, pp. 19–21, July–August, 1990.