Reverse Authentication in Financial Transactions and Identity Management

New families of protocol, based on communication over human-based side channels, permit secure pairing or group formation in ways such that no party has to prove its name. Rather, individuals are able to hook up devices in their possession to others that they can identify by context. We examine a model in which, to prove his or her identity to a party, the user first uses one of these “human-interactive security protocols” or HISPs to connect to it. Thus, when authenticating A to B, A first authenticates a channel she has to B: the reverse direction. This can be characterised as bootstrapping a secure connection using human trust. This provides new challenges to the formal modelling of trust and authentication.     

Numerical Study of Self-Complementary Antenna Characteristics on Substrate Lenses at Terahertz Frequency

This paper presents a numerical study of self-complementary antennas on substrate lenses made of high-permittivity dielectric material. Bowtie, logarithmically periodic, and logarithmic spiral antennas with the same outer and inner dimensions were selected for study, and their overall performances were compared in the terahertz band at frequencies up to 5.0?THz. The resonance and radiation characteristics of the three antennas were investigated in terms of input impedance, directivity, and radiation efficiency, using a full electromagnetic simulator. This study provides useful guidelines and partially solves the difficult problems of choosing the proper feed and optimizing the lens structure for a THz broadband integrated lens antenna.     

正确选择电源管理方案，提升系统性能并延长电池寿命

有了无线技术,用户就真正实现了"网络随行".然而无线设备无法长时间连接固定电源,因此如果仅靠电池供电的话,很快就能把电池电量消耗完.无论采用何种化学技术,电池都只能存储有限的电量,当电量耗尽时均需要替换或充电.加强对电源管理问题的重视可有助于延长电池的寿命.基站等一些不用依靠电池的无线系统必须在兼顾能源效率的前提下,才能实现高性能指标.     

A comparison between high-pass and low-pass \Updelta\Upsigma modulators

In this paper, high-pass (HP) $\Updelta\Upsigma$ modulators are compared against the traditional low-pass (LP) $\Updelta\Upsigma$ modulators. The objective of this comparison is to point out the advantages and drawbacks of the two modulators thereby allowing choosing the most suited for a given application. The metrics of comparison are the noise floor, power consumption, area and the effect of the non-idealities of all the basic blocks (i.e., operational transconductance amplifier, quantizer, switches and clocks). The comparative analysis shows that HP modulators are more suited for narrow band applications because of their immunity against DC-offset and flicker noise. For medium and wide band applications, LP modulators are preferred because of their higher robustness against switch imperfections and clock jitter.     

Symmetric Orthogonal Complex-Valued Filter Bank Design by Semidefinite Programming

A new design method for complex-valued two-channel finite impulse response (FIR) filter banks with both orthogonality and symmetry properties is developed. Based on a novel linear matrix inequality (LMI) characterization of trigonometric curves, the optimal design of perfect-reconstruction filter banks is cast into a semidefinite programming (SDP) problem. The dimension of the resulting SDP problem is further reduced by exploiting convex duality. Consequently, the globally optimal solution can be found for any practical filter length and desired regularity order.     

A Si bipolar monolithic RF bandpass amplifier

The application of monolithic inductors to the realization of Si bipolar monolithic RF amplifiers is investigated. As a test vehicle, a bipolar monolithic bandpass amplifier was fabricated and characterized. A 4-nH silicon integrated inductor was used to achieve a peak S ₂₁ gain of 8 dB, a simulated noise figure of 6.4 dB, and a matched input impedance of 50 Ω in the frequency range of 1-2 GHz     

In0.52Al0.48As/In0.53Ga0.47As MSM photodetectors and HEMT's grown by MOCVD on GaAs substrates

The authors report the first demonstration of In_0.52Al _0.48As/In_0.53Ga_0.47As metal-semiconductor-metal (MSM) photodetectors and high-electron-mobility transistors (HEMTs) grown on GaAs substrates by organometallic chemical vapor deposition. Both photodetectors and transistors showed no degradation in performance compared to devices simultaneously grown on InP substrates. The photodetectors exhibited a responsivity of 0.45 A/W and leakage current of 10 to 50 nA. The HEMTs with a gate length of 1.0 μm showed a transconductance as high as 250 mS/mm, and f_T and f_max of 25 and 70 GHz, respectively     

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.     

Different Directions of Switching of Chromium Oxide Thin Films

We have investigated the switching behavior of as-deposited CrO _x and post-annealed CrO _y films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices, I–V hysteresis was observed for the Ag/CrO _x /Pt device only; no resistance switching was observed for Ag/CrO _y /Pt, Ti/CrO _x /Pt, and Ti/CrO _y /Pt devices. Among FTO devices, I–V hysteresis was observed for the Ag/CrO _x /FTO device whereas I–V hysteresis with the opposite switching direction was observed for Ag/CrO _y /FTO, Ti/CrO _x /FTO, and Ti/CrO _y /FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO _x films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO _y films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO _y /Pt device but promoted short-range movement of O^2? ions through the bottom interface, resulting in resistance switching in the Ag/CrO _y /FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.     

Transmission of 160-Gb/s Modified Manchester modulation over WDM system

The paper examines the performance of Modified Manchester (MM) modulation scheme over wavelength division multiplexing (WDM) in high-speed optical communication links. The MM as a new modulation technique has a narrow spectral width compared to conventional Manchester coding, which allows its implementation in WDM systems beneficial. In this study, the performance characteristics of MM and conventional Manchester modulation formats are assessed in WDM system at 10 Gb/s bitrate for each channel, for the least allowable channel spacing as well as tolerance to chromatic dispersion (CD). It is revealed from the results of simulation that MM performs meaningfully well in comparison with conventional Manchester in terms of tolerance against narrow optical filtering, spectral efficiency, which is improved by 32% and CD tolerance, which is improved by +100 ps/nm. Sixteen wavelength channels (16 × 10 Gb/s) are modulated to provide 160 Gb/s data capacity, which was transmitted successfully over 224 km standard single mode fibre (SSMF) using MM while the conventional Manchester only covered about 157 km.