Compact Modules for Wireless Communication Systems in the E-Band (71–76 GHz)

The millimeter-wave spectrum above 70 GHz provides a cost-effective solution to increase the wireless communications data rates by increasing the carrier wave frequencies. We report on the development of two key components of a wireless transmission system, a high-speed photodiode (HS-PD) and a Schottky Barrier Diode (SBD). Both components operate uncooled, a key issue in the development of compact modules. On the transmitter side, an improved design of the HS-PD allows it to deliver an output RF power exceeding 0 dBm (1 mW). On the receiver side, we present the design process and achieved results on the development of a compact direct envelope detection receiver based on a quasi-optical SDB module. Different resonant (meander dipole) and broadband (Log-Spiral and Log-Periodic) planar antenna solutions are designed, matching the antenna and Schottky diode impedances at high frequency. Impedance matching at baseband is also provided by means of an impedance transition to a 50 Ohm output. From this comparison, we demonstrate the excellent performance of the broadband antennas over the entire E-band by setting up a short-range wireless link transmitting a 1 Gbps data signal.     

Technological development of Brazilian telecommunications in past decades

Brazilian telecommunications sector has undergone important modifications in the last 40 years. From a badly structured system of municipal level operators in 1960, with barely one million fixed lines to a large, nation-wide system with about 50 million fixed plus another 75 million mobile lines in 2005. This work paper reviews the institutional framework of telecommunications industrial and technological policy in Brazil in the last four decades, its results and present situation. Infrastructure and services modernisation and expansion process that happened in early 1970s were carried out at the expense of massive import of products and technology. A government strategy was, then, devised to stimulate local industrial and technological development in telecommunications, under the general guidelines of import substitution policy. Essential to this strategy was the creation of an innovation system around TELEBRÁS Research and Development Centre. This technological development model was successful while a protectionist economic policy existed. When economic and political circumstances could not anymore sustain an import substitution approach, in the 1990-decade, the model fell apart and has not been replaced by any other sectorial policy. A critical assessment is carried out, analysing the adopted actions in face of the digital technology maturing process that occurred in meantime.     

适用于异步徽处理器的16位自定时ALU

针对嵌入式微处理设计中提出的高性能,低功耗的要求,提出了一种面向异步微处理器的由动态电压级联逻辑电路（DCVS）构成的16位自定量ALU。在综合考虑面积、速度、功耗及指令的统计分布情况下,该ALU具有优异的性能。     

Theoretical and computational aspects of 2-D inverse profiling

The authors discuss two techniques for solving two-dimensional (2D) inverse scattering problems by parameterizing the scattering configuration, and determining the optimum value of the parameters by minimizing a cost function involving the known scattered-field data. The computation of the fields in each estimated configuration is considered as an auxiliary problem. To improve the efficiency of these computations, the CGFFT iterative scheme is combined with a special extrapolation procedure that is valid for problems with a varying physical parameter such as frequency, angle of incidence, or contrast. Further, they analyze the dynamic range and the resolution of linearized schemes. To obtain an acceptable resolution for an object with a large contrast with respect to the surrounding medium, multiple-frequency information is used. Finally, the availability of a fast-forward solver was an incentive to consider nonlinear optimization. In particular, the authors use a quasi-Newton algorithm at only twice the computational cost of the distorted-wave Born iterative scheme     

High-throughput analysis of multispectral images of breast cancer tissue.

Statistical analysis of genetic changes within cell nuclei that are far from the primary tumor would help determine whether such changes have occurred prior to tumor invasion. To determine whether the gene amplification in cells is morphologically and/or genetically related to the primary tumor requires quantitative evaluation of a large number of cell nuclei from continuous meaningful structures such as milk-ducts, tumors, etc., located relatively far from the primary tumor. To address this issue, we have designed an integrated image analysis software system for high-throughput segmentation of nuclei. Filters such as Beltrami flow-based reaction-diffusion, directional diffusion, etc., were used to pre-process the images resulting in a better segmentation. The accurate shape of the segmented nucleus was recovered using an iterative "shrink-wrap" operation. The study of two cases of ductal carcinoma in situ in breast tissue supports the biological observation regarding the existence of a preferential intraductal invasion, and therefore a common origin, between the primary tumor and the gene amplification in the cell-nuclei lining the ductal structures in the breast.     

The influence of oxygen partial pressure on growth of the (Hg,Re)-1223 intergrain junction

Hg/sub 0.82/Re/sub 0.18/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8+/spl delta// polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O/sub 2/ and 90% Ar (optimal doped). The optimal doped sample has presented the highest /spl alpha/ exponent of the J/sub c//spl prop/[1-(T/T/sub c/)/sup 2/]/sup /spl alpha// dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the /spl alpha/ exponent can be used as a junction quality parameter.     

Design of 50-nm vertical MOSFET incorporating a dielectric pocket

A new architecture for a vertical MOS transistor is proposed that incorporates a so-called dielectric pocket (DP) for suppression of short-channel effects and bulk punch-through. We outline the advantages that the DP brings and propose a basic fabrication process to realize the device. The design issues of a 50-nm channel device are addressed by numerical simulation. The gate delay of an associated CMOS inverter is assessed in the context of the International Technology Roadmap for Semiconductors and the vertical transistor is seen to offer considerable advantages down to the 100-nm node and beyond due to the dual channels and the ability to produce a 50-nm channel length with more relaxed lithography.