Robust Fabrication of Nonstick,Noncorrosive, Conductive Graphene‐Coated Liquid Metal Droplets for Droplet‐Based,Floating Electrodes

Nontoxic liquid metals (conductive materials in a liquid state at room temperature) are an emerging class of materials for applications ranging from soft electronics and robotics to medical therapy and energy devices. Their sticky and corrosive properties, however, are becoming more of a critical concern for circuits and devices containing other metals as these are easily destroyed or contaminated by the liquid metals. Herein, a feasible method for fabricating highly conductive graphene‐coated liquid metal (GLM) droplets is reported and their application as nonstick, noncorrosive, movable, soft contacts for electrical circuits is demonstrated. The as‐prepared GLM droplets consist of a liquid‐phase soft core of liquid metal and a slippery outer layer of graphene sheets. These structures address the issue of simultaneous control of the wettability and conductivity of a soft electronic contact by combining extraordinary properties, i.e., nonstick, noncorrosive, yet exhibiting high electronic conductivity while in contact with metal substrates, e.g., Au, Cu, Ag, and Ni. As proof‐of‐concept, the as‐prepared GLM droplets are demonstrated as floating electrodes for movable, recyclable electronic soft contacts in electrical circuits.     

Vanadium Doping Enhanced Electrochemical Performance of Molybdenum Oxide in Lithium‐Ion Batteries

Molybdenum trioxide (MoO₃) suffers from poor conductivity, a low rate capability, and unsatisfactory cycling stability in lithium‐ion batteries. The aliovalent ion doping may present an effective way to improve the electrochemical performances of MoO₃. Here, it is shown, by first‐principle calculations, that doping MoO₃ with V by 12.5% can modulate significantly electronic structure and provide a small diffusion barrier for enhancing the electrochemical performance of MoO₃. The ultralong Mo_0.88V_0.12O_2.94 nanostructures, which retain the h‐MoO₃ structure and present an exceptionally high conductivity and fast ionic diffusion due to the substitution of V, facilitating lithiation/delithiation behavior, and induce a fine nanosized structure with a reduced volume change are prepared. As a result, the stress and strain are alleviated during the Li‐ion intercalation/deintercalation processes, improving the cycling stability and rate capability. Such a large improvement in the electrochemical properties can be ascribed to the stabilizing effect of V, the small migration energy barrier, and short diffusion path, which arise from the introduction of V into MoO₃. The unique engineering strategy and facile synthesis route open up a new avenue in modifying and developing other species of electrode materials.     

Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization

Magnetic microscopy has proven its usefulness throughout the years. It allows current localization with a certain degree of precision by using an inversion algorithm to invert the Biot–Savart law. The goal is to obtain the current distribution once the magnetic field is given. However, in order to obtain a stable solution, the magnetic data is severely low-pass filtered in the spatial Fourier domain, and some important information is lost. In this paper, the contribution given by the different spatial frequencies was studied: it was demonstrated how this information can be used to obtain additional information regarding the position of the currents. A comparative study between the theoretical approach and the application to the measurements is also shown.     

一种512 Kbit同步高速SRAM的设计

设计了一种深亚微米 ,单片集成的 5 1 2 K( 1 6K× 32位 )高速静态存储器 ( SRAM)。该存储器可以作为IP核集成在片上系统中。存储器采用六管 CMOS存储单元、锁存器型敏感放大器和高速译码电路 ,以期达到最快的存取时间。该存储器用 0 .2 5μm五层金属单层多晶 N阱 CMOS工艺实现 ,芯片大小为 4.8mm× 3.8mm。测试结果表明 ,在 1 0 MHz的工作频率下 ,存储器的存取时间为 8ns,工作电流 7m A。     

Markovian场中四能级系统的窄带五阶非线性效应

本文采用高阶相干函数理论研究了四能级系统在Markovian场下的窄带五阶非线性效应（NFPBFMS）。我们得到了混沌场模型、相散场模型及实高斯场模型下窄带拍频信号强度随时间的变化规律，并讨论了三种模型对测量原子能级分裂精度的影响。     

A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

An Artificial Skyrmion Platform with Robust Tunability in Synthetic Antiferromagnetic Multilayers

Magnetic skyrmions are topologically nontrivial spin structures, and their existence in ferromagnetically coupled multilayers has been widely reported with a disordered arrangement. Here, a nucleation scenario of ordered skyrmions in nanostructured synthetic antiferromagnetic (SAF) multilayers is proposed and experimentally demonstrated using direct magnetization imaging, indirect magnetometer and magnetoresistance measurement, and micromagnetic simulation. Instead of relying on Dzyaloshinskii–Moriya interaction, the antiferromagnetic interlayer exchange coupling in the SAF multilayers fulfills the role of nucleation and stabilization of skyrmions. The robustness of the proposed skyrmion nucleation scenario is examined against temperature from 4.5 to 300 K and device size from 400 to 1200 nm. Interestingly, these synthetic skyrmions still behave well with a size less than 100 nm. The higher stability than generic magnetic domains can be attributed to topological protection. The results thus provide an artificial skyrmion platform to meet the functional needs of high density and designable arrangement in magnonic and spintronic applications.     

Microstructure transformations induced by modified-layers on pentacene polymorphic films and their effect on performance of organic thin-film transistor

Phenyltrimethoxysilane was used to modify SiO₂ insulator and significantly enhanced the pentacene based organic thin-film transistors (OTFTs). The crystal structure, surface morphology, molecular structure and microstructure of pentacene polymorphic films with and without the modifications were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and contact angle meter. XRD studies reveal a decreased tilt angle (θ_T) of pentacene molecules from c-axis toward a-axis, indicating that polymorphs transformation from the “triclinic bulk” phase to the “thin film” phase and orthorhombic phase occurs. AFM images show that the surface roughness of gate insulators has no influence on performance of the pentacene based OTFT. These results provide strong evidence that the performance improvement of OTFT after PhTMS modification of SiO₂ insulator surface is related to the microstructure transformation of the semiconductor. It suggests that the modified-layer may alter the molecular geometry and further induce structural phase transitions in the pentacene films for the performance improvement.     

Power consumption analysis of video streaming in 4G LTE networks

Video streaming, one of the most popular technologies for online video playback, has already been applied to 4G LTE networks. Previous work has been devoted to understanding the power consumption in general 4G LTE networks, while it is still unclear how the online video streaming makes impact on the power performance of mobile devices. Inspired by this, this paper investigates the relationship between the mobile device’s power performance characteristics and the behaviours of video streaming in 4G LTE networks. There are many natural issues/questions that are clearly interesting and important, while it is non-trivial to answer these issues/questions exactly (e.g., where is the energy saving room? how much is it?). To address a series of issues like the above, we formulate our energy models together with an algorithm that can assist our analysis. Particularly, we design a systematic platform, and conduct a comprehensive and also deep analysis on the power consumption of video streaming in 4G LTE networks. Our experiments reveal us a series of valuable findings—the saving room in the network part is large (from 41.86 to 69.62%), the number of RRC tails and the transmission pattern could be promising for optimizing the power consumption, for example.     

丙类谐振功率放大器动态线作法与应用探讨

基于晶体三极管在共射组态的大电流和大集－射电压的电特性,提出了适于丙类谐振功率放大器动态线的近似作法,讨论了各有电压和负载的变化对动态线的影响,并运用该动态线对丙类谐振功率放大器的工作状态和性能进行了定性分析。