High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.     

45% efficient silicon photovoltaic cell under monochromatic light

Improvements in the performance of silicon photovoltaic cells for solar applications are adapted for nonsolar photovoltaic applications. Improved monochromatic light efficiencies above 45% are reported including efficiencies close to 40% for relatively long-wavelength (1.064 μm) light as produced by neodymium-doped yttrium-aluminum garnet (Nd:YAG) lasers     

Fabrication of optical fibre nanowires and their optical and mechanical characterisation

It is demonstrated for the first time that long nanowires with radii as small as 30 nm can be manufactured with a conventional coupler fabrication rig. The temporal deterioration of nanowire optical properties has been studied and correlated with its mechanical behaviour. The original transmission properties have been restored by a post-fabrication treatment.     

Exponential Stability of Interval Dynamical Systems with Quadratic Nonlinearity

This article proposes an approach for investigating the exponential stability of a nonlinear interval dynamical system with the nonlinearity of a quadratic type on the basis of the Lyapunov’s direct method. It also constructs an inner estimate of the attraction domain to the origin for the system under consideration.     

High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications     

3^n阶矩阵乘法的分块算法

针对３＾ｎ阶矩阵的乘法运行，给出了一种分块算法，其乘法运行量比常规的矩阵乘法计算方法和补零的基－２算法都有所减少。