Examination of veins with magnetic resonance imaging and it's place in the diagnostic algorithm of patients with deep venous thrombophlebitis]

The aim of our study was to show the results of the Magnetic Resonance Angiography of pelvis and lower extremities. 21 patients with clinical signs of venous thrombosis were examined. The obtained results show the MRA is very useful in evaluation of venous flow.     

Complete single mode wavelength coverage over 40 nm with a superstructure grating DBR laser

The spectral characteristics of a widely tunable super structure grating distributed Bragg reflector (SSG-DBR) laser are investigated and the design considerations of the grating reflectors are given. By systematically adjusting the control currents of the two reflector sections and the phase section it is experimentally shown that every wavelength in an interval of 40 nm can be reached with a side-mode suppression usually better than 30 dB     

Co-ordinated economic and advance dispatch procedures

The paper deals with the problem of improving co-ordination between the online economic dispatch (ED) function and the very short-term advance dispatch (AD). Both procedures are formulated as optimal dispatching problems, but while a static model is used for the ED function, a dynamic model is employed in AD. The need to account for ramp-rate limits of thermal power generation even in the ED phase is satisfied by adding suitable penalty terms to the objective function of the classical ED problem. These penalties are proportional to the Lagrange multipliers associated with ramp-rate limits that are active at the AD solution. An efficient updating procedure is used to correct the penalization by taking the load forecast errors into account. The proposed co-ordination procedure can provide the snapshot ED with the long range perspective of AD without resorting to heuristic approaches. The procedure is validated by extensive testing carried out both on a small CIGRE test case and on a medium-large scale network representative of the Italian EHV system. Moreover, test results show that the CPU time requirements of the modified ED procedure are still suited to online applications     

Groupwork and computers: task type and children's performance

Abstract In the majority of British primary schools, children use the computer in groups of two or three. This is partly due to the lack of resources, that is, most classrooms still only have one or two computers to share between around 30 children. Groupwork on computers is also justified for pedagogic reasons. Previous research comparing children working in groups or alone has revealed an advantage for children working in groups although the work undertaken has generally been problem solving tasks. This investigation examined the performance of pairs and individual 6-year old children on a drill and practice program using a pre-test, intervention, post-test design. In comparison to the problem solving evidence, individuals were found to have a significant advantage over pairs during the computer-based task.     

EIR1, a root-specific protein involved in auxin transport, is required for gravitropism in Arabidopsis thaliana

The EIR1 gene of Arabidopsis is a member of a family of plant genes with similarities to bacterial membrane transporters. This gene is expressed only in the root, which is consistent with the phenotypes of the eir1 mutants-the roots are agravitropic and have a reduced sensitivity to ethylene. The roots of eir1 mutants are also insensitive to the excess auxin produced by alf1-1 and fail to induce an auxin-inducible gene in the expansion zone. Although they fail to respond to internally generated auxin, they respond normally to externally applied auxin. Expression of the EIR1 gene in Saccharomyces cerevisiae confers resistance to fluorinated indolic compounds. Taken together, these data suggest that the EIR1 protein has a root-specific role in the transport of auxin.     

ELEVATED TEMPERATURE FRACTURE OF PARTICULATE-REINFORCED ALUMINUM PART I: FRACTURE TOUGHNESS

Abstract—The plane-strain initiation and growth fracture toughnesses of powder-metallurgy-processed, SiC particulate-reinforced 2009 plate were measured at temperatures from 25°C to 316°C. Initiation toughness from electrical potential monitoring ( K _JICi) is 18 MPa°m at 25°C, and is nearly constant to 220°C before decreasing sharply to 6 MPa°m at 316°C. Growth toughness, given by the tearing modulus ( T _R), is less than 3 from 25°C to 125°C, and increases dramatically above 200°C. The magnitude and temperature dependence of initiation toughness depend on detection of the critical fracture event. Standard measures of toughness K _IC and K _JIC exceed K _JICi and increase to a plateau with increasing temperature. The fracture mode for the composite is microvoid nucleation, growth and coalescence at all temperatures. Void nucleation is associated with SiC; such particles both crack and create stress and plastic strain concentrations that rupture the interface or adjacent matrix, particularly at corners. Matrix plasticity and cavitation increase with increasing temperature. Void growth is regular at all temperatures, but limited by adjacent SiC particles. Both K _JICi and T _R are governed by the temperature-dependent crack-tip plastic stress and strain fields, and the intrinsic damage resistance of the composite microstructure.     

High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's(JHEMT's) with regrown ohmic contacts by MOCVD

A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures is dependent on the multiplication of electrons injected from the source (channel current) and the gate (gate leakage) into the channel. In addition, holes are generated by high fields at the drain and are injected back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. Both have been achieved by incorporating a p⁺-2DEG junction as the gate that modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1-μm-gate-length devices fabricated have two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively