Directional Estimation of Block-Fading MIMO Channels Using Spherical Harmonics Expansion and Tensor Analysis

The well-known benefits of multiple input multiple output (MIMO) wireless communication systems suppose an efficient use of spatial diversity at both the transmitter and receiver. An important and not well-explored path toward improving MIMO system performance using spatial diversity takes into account the interactions among the antennas and the (physical) propagation medium. In this work, spherical harmonics and tensor analysis are originally combined into the problem of MIMO channel modeling and estimation. The use of spherical harmonics allows to represent the antenna radiation patterns in terms of coefficients of an expansion of spatially orthogonal functions, thus decoupling the transmit and receive antenna array responses from the physical propagation medium. Assuming a single-scattering propagation scenario driven by a finite number of specular multipaths, the parallel factor model is used to decompose the spherical modes of the MIMO channel into a sum of rank-one spherical mode tensors, whose dimensions are transmit modes, receive modes, and time. Then, we extend the tensor modeling framework to double scattering channels by resorting to the PARATUCK model that captures the interactions between multiple-scattering clusters. Capitalizing on the structure of these tensor models, we derive tensor-based alternating least squares algorithms for estimating directional MIMO channels in the spherical harmonics domain, from which the directions of arrival and directions of departure are extracted by means of a MUSIC-based method. Simulation results are provided to assess the performance of the proposed algorithms in selected system configurations. Our results also show the impact of the spherical expansion order on the accuracy of DoD/DoA estimates using the proposed algorithms.     

Four state binary QAM trellis code better than known codes

Presents a new one-memory quaternary four-state trellis code, and its four-state binary equivalent code based on a QAM constellation which is 0.52 dB better than the four-state Ungerboeck code.<>     

Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures

A systematic study of the effect of measurement perturbation on in situ monitoring of the composition of molecular beam epitaxially (MBE) grown Hg_1−xCd_xTe using spectroscopic ellipsometry was carried out. Of the five variables investigated, which included angle of incidence, wavelength of the light beam, modulator rotation, analyzer rotation, and modulator amplitude, the angle of incidence and the modulator rotation had the strongest effect on the in situ Hg_1−xCd_xTe composition monitoring process. A wobble-free sample manipulator was installed to reduce the impact of these two variables. With these improvements, the spectroscopic ellipsometer is now routinely used to monitor Hg _1−xCd_xTe compositions during MBE growth of heterostructures and is a useful tool in diagnosing growth-related problems. Examples are included for both application areas, that include the control of the interface between Hg_1−xCd_xTe layers of different compositions, i.e. device engineering.     

Impurity ‘Hot Spots’ in MBE HgCdTe/CdZnTe

In this work, impurity ‘hot spot’ macro-defects—high impurity level macro-defect contaminates were examined. ‘Hot spots’ have very high localized concentrations of: K, Mg, Ni, Cr, Mn, Ca, Al, Na, Fe, and Cu. For example, these ‘hot spot’ macro-defects can have Cu concentrations >?1?×?10¹⁸ cm^?3. Focused ion beam scanning transmission electron microscopy analysis of four ‘hot spots’ was performed. The origin of ‘hot spot’ defects is unresolved—however, our analysis has shown ‘hot spots’ can arise due to molecular beam epitaxy spit defects and CdZnTe substrate defects. The estimated ‘hot spot’ density is ～?30 cm^?2. The presence of impurity ‘hot spot’ macro-defects in HgCdTe/CdZnTe is confirming evidence for the occurrence of L. Bubulac’s impurity ‘pipe’ mechanism.     

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the growth of HgCdTe onto this substrate as an alternative to the growth of HgCdTe on bulk CdZnTe wafers. These developments have focused primarily on mid-wavelength infrared (MWIR) HgCdTe and have led to successful demonstrations of high-performance 1024×1024 focal plane arrays (FPAs) using Rockwell Scientific’s double-layer planar heterostructure (DLPH) architecture. We are currently attempting to extend the HgCdTe-on-Si technology to the long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) regimes. This is made difficult because the large lattice-parameter mismatch between Si and CdTe/HgCdTe results in a high density of threading dislocations (typically, >5E6 cm⁻²), and these dislocations act as conductive pathways for tunneling currents that reduce the R_oA and increase the dark current of the diodes. To assess the current state of the LWIR art, we fabricated a set of test diodes from LWIR HgCdTe grown on Si. Silicon wafers with either CdTe or CdSeTe buffer layers were used. Test results at both 78 K and 40 K are presented and discussed in terms of threading dislocation density. Diode characteristics are compared with LWIR HgCdTe grown on bulk CdZnTe.     

An active star topology for improving fault confinement in CAN networks

The controller area network (CAN) is a field bus that is nowadays widespread in distributed embedded systems due to its electrical robustness, low price, and deterministic access delay. However, its use in safety-critical applications has been controversial due to dependability limitations, such as those arising from its bus topology. In particular, in a CAN bus, there are multiple components such that if any of them is faulty, a general failure of the communication system may happen. In this paper, we propose a design for an active star topology called CANcentrate. Our design solves the limitations indicated above by means of an active hub, which prevents error propagation from any of its ports to the others. Due to the specific characteristics of this hub, CANcentrate is fully compatible with existing CAN controllers. This paper compares bus and star topologies, analyzes related work, describes the CANcentrate basics, paying special attention to the mechanisms used for detecting faulty ports, and finally describes the implementation and test of a CANcentrate prototype.     

Effects of a-Si:H resist vacuum-lithography processing on HgCdTe

A vacuum-compatible process for carrying out lithography on Hg_1−xCd_xTe and CdTe films was previously demonstrated. It was shown that hydrogenated amorphous silicon (a-Si:H) could be used as a dry resist by projecting a pattern onto its surface using excimer laser irradiation and then developing that pattern by hydrogen plasma etching. Pattern transfer to an underlying Hg_1−xCd_xTe film was then carried out via Ar/H₂ plasma etching in an electron cyclotron resonance (ECR) reactor. Despite the successful demonstration of pattern transfer, the possibility of inducing harmful effects in the Hg_1−xCd_xTe film due to this vacuum lithography procedure had not been explored. Here we present structural and surface compositional analyses of Hg_1−xCd_xTe films at key stages of the a-Si:H vacuum lithography procedure. X-ray diffraction double crystal rocking curves taken before and after a-Si:H deposition and after development etching were identical, indicating that bulk structural changes in the Hg_1−xCd_xTe film are not induced by these processes. Cross-section transmission electron microscopy studies show that laser-induced heating in the 350 nm thick a-Si:H overlayer is not sufficient to cause structural damage in the underlying Hg_1−xCd_xTe surface. In vacuo surface analysis via Auger electron spectroscopy and ion scattering spectroscopy suggest that the hydrogen plasma development process produces Hg-deficient surfaces but does not introduce C contamination. However, after ECR plasma etching into the Hg_1−xCd_xTe film, the measured x value is much closer to that of the bulk.     

Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates

We report here molecular beam epitaxy (MBE) mercury cadmium telluride (HgCdTe) layers grown on polished and repolished substrates that showed state-of-the-art optical, structural, and electrical characteristics. Many polishing machines currently available do not take into account the soft semiconductor materials, CdZnTe (CZT) being one. Therefore, a polishing jig was custom designed and engineered to take in account certain physical parameters (pressure, substrate rotational frequency, drip rate of solution onto the polishing pad, and polishing pad rotational velocity). The control over these parameters increased the quality, uniformity, and the reproducibility of each polish. EPIR also investigated several bromine containing solutions used for polishing CZT. The concentration of bromine, as well as the mechanical parameters, was varied in order to determine the optimal conditions for polishing CZT.     

Power limits for secondary devices operating on TV white spaces

The use of TV white spaces as an alternative to overcome spectrum scarcity is a huge opportunity for new telecommunication systems and services. While being attractive for its desirable propagation characteristics, this part of the spectrum imposes a major difficulty from design and regulatory perspectives: how to optimize the use of spectrum and to ensure the protection of primary users, TV systems for example, at the same time. This paper discusses strategies to be adopted by geo-location database operators to calculate adaptive maximum permitted power levels for secondary devices, according to permissible levels of interference into the digital terrestrial television primary system.     

Coupling GIS with Hydrologic and Hydraulic Flood Modelling

Geographic Information Systems (GIS) have been recognised as a powerful means to integrate and analyse data from various sources in the context of comprehensive floodplain management. As part of this comprehensive approach to floodplain management, it is very important to be able to predict the consequences of different scenarios in terms of flooded areas and associated risk. Hydrologic and hydraulic modelling plays a crucial role and there is much to gain in incorporating these modelling capabilities in GIS. This is still a rather complex task and research is being done on the full integration of these models. Interfacing between these models and GIS may be a very efficient way of overcoming the difficulties and getting very good results in terms of engineering practice. This paper presents results based on the use of Intergraph GIS coupled with Idrisi GIS. Using these two systems substantially increased the flexibility of using GIS as a tool for flood studies. A lumped (XSRAIN) and a distributed (OMEGA) hydrologic models were used to simulate flood hydrographs. The well known HEC-2 Hydraulic model was used to compute flooded areas. These models were applied in the Livramento catchment with very good results. The computation of flooded areas for different flood scenarios, and its representation in GIS, can be used in the assessment of affected property and associated damages. This is a very useful GIS-based approach to floodplain management.