Investigations of two-stage-pseudospark switches for high-currentapplications

To avoid the lowering of the holdoff voltage due to the electrode erosion in one stage high current pseudospark switches (PSS), a two stage PSS with no axial aperture in the intermediate electrode was tested. For investigations a pulse generator was used generating peak currents up to 120 kA at a maximum voltage of 30 kV with a period length of 5 μs of a weakly damped sine wave with 90% current reversal. In comparison with a one stage PSS the breakdown characteristic was shifted to higher pressure. With a free floating intermediate electrode, the device could not be triggered, however, with additional capacities of a few nF between the three electrodes the discharge was ignited. The discharge in the second gap is triggered by the pseudospark discharge in the cathode gap, discharging the auxiliary capacities. Simultaneously, observation of both gaps with fast shutter photography showed an independent movement of the discharges in the two gaps. In the cathode gap as current increases, the discharge moves away from the center to the plane electrode surface as has been observed in the one stage PSS. However, in the anode gap the discharge moves away from the center after a contraction to the center. The two discharges are transmitted to metal vapor arc type discharges as the erosion patterns prove. With this kind of a two stage PSS holdoff voltages exceeding 35 kV would be possible. The characteristic switch data, i.e., delay and jitter, are nearly equal to a one stage PSS     

Diketopyrrolopyrrole Organic Thin‐Film Transistors: Impact of Alkyl Substituents and Tolerance of Ethylhexyl Stereoisomers

Bis(thiophen‐2‐yl)‐diketopyrrolopyrrole (DPP) dyes bearing various alkyl substituents at the amide positions (n‐butyl, n‐pentyl, n‐hexyl, n‐heptyl, n‐octyl, 2‐ethylhexyl) and chlorine (Cl), bromine (Br), or cyano (CN) substituents at the thiophene positions have been synthesized and investigated with regard to their molecular and semiconducting properties. Intense absorption, strong fluorescence, and reversible oxidation and reduction processes are common to all of these dyes. Their characterization as organic semiconductors in vacuum‐processed thin‐film transistors reveals p‐channel operation with field‐effect mobilities ranging from 0.01 to 0.7 cm² V^?1 s^?1. The highest mobility is found for the DPP dyes bearing the 2‐ethylhexyl substituents, which is surprising, considering that as a result of the chiral substituents, this material is a mixture of (R,R), (S,S), and (R,S) stereoisomers. The high carrier mobility in the films of the DPPs bearing stereoisomerically inhomogeneous ethylhexyl groups is rationalized here by single‐crystal X‐ray diffraction (XRD) analysis in combination with XRD and atomic force microscopy studies on thin films, which reveal the presence of slightly different 2D layer arrangements for the n‐alkyl and the 2‐ethylhexyl derivatives. For the cyano‐substituted DPPs possessing the lowest LUMO levels, ambipolar transport characteristics are observed.     

Chemically Resistant,Shapeable, and Conducting Metal‐Organic Gels and Aerogels Built from Dithiooxamidato Ligand

Metal‐organic gels (MOGs) appear as a blooming alternative to well‐known metal‐organic frameworks (MOFs). Porosity of MOGs has a microstructural origin and not strictly crystalline like in MOFs; therefore, gelation may provide porosity to any metal‐organic system, including those with interesting properties but without a porous crystalline structure. The easy and straightforward shaping of MOGs contrasts with the need of binders for MOFs. In this contribution, a series of MOGs based on the assembly of 1D‐coordination polymer nanofibers of formula [M(DTA)]_n (M^II: Ni, Cu, Pd; DTA: dithiooxamidato) are reported, in which properties such as porosity, chemical inertness, mechanical robustness, and stimuli‐responsive electrical conductivity are brought together. The strength of the M? S bond confers an unusual chemical resistance, withstanding exposure to acids, alkalis, and mild oxidizing/reducing chemicals. Supercritical drying of MOGs provides ultralight metal‐organic aerogels (MOAs) with densities as low as 0.03 g cm^?3 and plastic/brittle behavior depending on the nanofiber aspect ratio. Conductivity measurements reveal a semiconducting behavior (10^?12 to 10^?7 S cm^?1 at 298 K) that can be improved by doping (10^?5 S cm^?1). Moreover, it must be stressed that conductivity of MOAs reversibly increases (up to 10^?5 S cm^?1) under the presence of acetic acid.     

Ultrathin Polydopamine Films with Phospholipid Nanodiscs Containing a Glycophorin A Domain

Cellular membranes have long served as an inspiration for nanomaterial research. The preparation of ultrathin polydopamine (PDA) films with integrated protein pores containing phospholipids and an embedded domain of a membrane protein glycophorin A as simplified cell membrane mimics is reported. Large area, ultrathin PDA films are obtained by electropolymerization on gold surfaces with 10–18 nm thickness and dimensions of up to 2.5 cm². The films are transferred from gold to various other substrates such as nylon mesh, silicon, or substrates containing holes in the micrometer range, and they remain intact even after transfer. The novel transfer technique gives access to freestanding PDA films that remain stable even at the air interfaces with elastic moduli of ≈6–12 GPa, which are higher than any other PDA films reported before. As the PDA film thickness is within the range of cellular membranes, monodisperse protein nanopores, so‐called “nanodiscs,” are integrated as functional entities. These nanodisc‐containing PDA films can serve as semi‐permeable films, in which the embedded pores control material transport. In the future, these simplified cell membrane mimics may offer structural investigations of the embedded membrane proteins to receive an improved understanding of protein‐mediated transport processes in cellular membranes.     

Energy Level Engineering in Organic Thin Films by Tailored Halogenation

In modern electronics, it is essential to adapt band structures by adjusting energy levels and band gaps. At first sight, this “band structure engineering” seems impossible in organic semiconductors, which usually exhibit localized electronic states instead of Bloch bands. However, the strong Coulomb interaction in organic semiconductors allows for a continuous shift of the ionization energy (IE) over a wide range by mixing molecules with halogenated derivatives that exhibit different quadrupole moments. Here, this effect of energy level engineering on blends of pentacene and two fluorinated derivatives, in which the position but not the number of fluorine atoms differ, is studied. Structural investigations confirm that pentacene forms intermixed phases in blends with the fluorinated species. The investigation of electronic properties and simulations reveals a much larger shift of the ionization energy (1.5 eV) than in previous studies, allowing to test this model in a range not investigated so far, and emphasizing the role of the position of the halogen atoms. The tuning effect is preserved in electronic devices such as field‐effect transistors and significantly influences device characteristics.     

丝网印刷聚酰亚胺晶圆保护

适用性 使用丝网印刷的方法对晶圆表面施涂聚酰亚胺保护层相对于传统的旋转-蚀刻工艺技术具有效率和成本的优势.丝网印刷晶圆表面保护只需要两步工序(印刷和固化),而旋转-蚀刻工艺需要七步或更多的工序.     

Emission Reduction and Capacity Increase in GSM Networks by Single Antenna Interference Cancellation

There is an increasing demand to utilize the frequency spectrum of mobile communication systems most efficiently. This means in particular to GSM networks that the frequency reuse shall be planned as low as possible. In this case the system may become limited by interference rather than coverage. One promising technology for GSM mobiles in interference-limited systems is single antenna interference cancellation (SAIC). This receiver technology allows both for increasing the network capacity and for reducing the base station transmit power. The aim of this paper is to assess the emission reduction as well as the system capacity capabilities when SAIC technology is applied in downlink receivers.