Thermoelectric Properties of Co<Subscript>4</Subscript>Sn<Subscript>6</Subscript>Se<Subscript>6</Subscript> Ternary Skutterudites

A ternary ordered variant of the skutterudite structure, the Co₄Sn₆Se₆ compound, was prepared. Polycrystalline samples were prepared by a modified ceramic method. The electrical conductivity, the Seebeck coefficient and the thermal conductivity were measured over a temperature range of 300–800 K. The undoped Co₄Sn₆Se₆ compound was of p-type electrical conductivity and had a band gap E _g of approximately 0.6 eV. The influence of transition metal (Ni and Ru) doping on the thermoelectric properties was studied. While the thermal conductivity was significantly lowered both for the undoped Co₄Sn₆Se₆ compound and for the doped compounds, as compared with the Co₄Sb₁₂ binary skutterudite, the calculated ZT values were improved only slightly.     

Molecular Origin of the Charge Carrier Mobility in Small Molecule Organic Semiconductors

Small‐molecule organic semiconductors are used in a wide spectrum of applications, ranging from organic light emitting diodes to organic photovoltaics. However, the low carrier mobility severely limits their potential, e.g., for large area devices. A number of factors determine mobility, such as molecular packing, electronic structure, dipole moment, and polarizability. Presently, quantitative ab initio models to assess the influence of these molecule‐dependent properties are lacking. Here, a multiscale model is presented, which provides an accurate prediction of experimental data over ten orders of magnitude in mobility, and allows for the decomposition of the carrier mobility into molecule‐specific quantities. Molecule‐specific quantitative measures are provided how two single molecule properties, the dependence of the orbital energy on conformation, and the dipole‐induced polarization determine mobility for hole‐transport materials. The availability of first‐principles based models to compute key performance characteristics of organic semiconductors may enable in silico screening of numerous chemical compounds for the development of highly efficient optoelectronic devices.     

Dielectric integrity of thin thermal oxides on silicon

The role of silicon dioxide layers in microelectronics and the importance of their integrity are undisputable. From passivating coatings and masking layers for diffusion to ultra-thin tunneling films — all the silicon technology could not exist without silicon dioxide. This review deals with some aspects of the integrity of thin silicon dioxide films for VLSI applications. The problems of dielectric strength and wear-out are considered from the point of view of their mechanisms, models, oxide processing dependence, testing, and measuring. A brief presentation of statistical approaches commonly applied to reliability topics is also included.     

Impact-ionized electron-hole plasma instability in GaAs

The possibility of the excitation of impact-ionized electron-hole plasma oscillatory instability in GaAs with frequency up to 10¹² Hz is shown. The linear and nonlinear stages of the instability are investigated.     

Carcass traits and meat quality of male lambs fed monensin or lasalocid

Male lambs, crossbred Merino × Ille de France, were fed a diet supplemented with 31 mg monensin or 32 mg lasalocid per kg of feed dry matter from an initial body weight of 23·6–23·9 kg to the slaughter weight of approximately 40 kg.

Carcass traits and meat quality were evaluated after slaughter; the values obtained were compared with those of the control group fed the same diet without the ionophore supplement.

There were few significant differences among the individual groups in carcass value, sensoric and technological properties of meat and of its composition. However, the lasalocid-fed group seemed to be somewhat better in muscling and in the composition of meat.     

Formation of an intermediate C-S-H phase during the hydrothermal synthesis of gyrolite

An intermediate C-S-H phase, similar to the Assarsson's “Phase Z”, with basal spacing of 16Å formed when β-C₂S or γ-C₂S reacted with silicon dioxide (molar ratio CaO/SiO₂ = 0.5–0.28) for 8 hours at 190°C under hydrothermal conditions. This intermediate C-S-H phase transformed to gyrolite upon prolonged hydrothermal treatment.     

Solvent induced crystallization of syndiotactic poly(methyl methacrylate) relation to the formation of polymer aggregates in solution

Polymer Bulletin - Solutions of syndiotactic (s) poly (methyl methacrylate) (PMMA) and samples of solid s-PMMA prepared from these solutions were studied by NMR and infrared (IR) spectroscopy and...     

Improved bounds for displacements at shakedown

A method is proposed for obtaining an upper bound for the displacement which can occur in a structure adapted to a given variable-repeated load. First, the exact formulation of the problem is presented which leads to a problem of optimal control. Then the differential constraints are neglected or replaced by algebraic conditions. The solution of the resulting linear programming problem supplies an upper bound to the exact elastic-plastic deflection. Further approximation can be introduced, if desired, which allows the decomposition of the problem into separate bounds to elastic and plastic parts of displacement.Numerical examples include a two-span continuous beam and a two-storey frame. The first was solved analytically, the second by means of a specially developed computer routine capable of evaluating the displacements at shakedown of arbitrary planar frames or trusses. The results obtained confirm the validity of the small displacement approach.