The nature and role of incoherent interphase interfaces in diffusional solid-solid phase transformations

In this article, some views on the nature of incoherent interphase interfaces, and their role in the nucleation and growth processes governing the evolution of microstructure in solid-state diffusional transformations (reconstructive transformations), are explored. It is argued that essentially incoherent interfaces can be involved in the initiation and propagation of polymorphic transformations and massive transformations as well as in various precipitation phenomena in metallic and ceramic systems. Similar views have already been advanced earlier in connection with studies of massive transformations. Faceting along the interphase interface during nucleation and growth can derive from thermodynamic, kinetic, and crystallographic factors independent of the bicrystallography of the conjugate phases. This idiomorphic behavior can be relevant to both intergranular and intragranular phase formation. The concept of one-dimensional (1-D) commensuration of phases through plane edge-to-edge/row matching is an interesting extension of the classic ideas of coherency and bicrystallography and potentially important in characterizing the behavior of certain types of boundaries. However, the general importance of these geometrical relations in real and reciprocal space will depend on the depth of the energy wells in orientation space associated with these special boundaries. This article is based on a presentation made in the “Hume-Rothery Symposium on Structure and Diffusional Growth Mechanisms of Irrational Interphase Boundaries,” which occurred during the TMS Winter meeting, March 15–17, 2004, in Charlotte, NC, under the auspices of the TMS Alloy Phases Committee and the co-sponsorship of the TMS-ASM Phase Transformations Committee.     

Calculation of the standard heat capacities of crystalline oxides in the Fe-O-Ti system

Our earlier experimental studies of the solid-phase reduction of disseminated lump ores demonstrate that an oxide lattice transforms into a metal lattice via the saturation of the oxide crystal lattice by charged oxygen vacancies. Low-charge metal cations appear in the oxide crystal lattice, and they are related to oxygen vacancies by the condition of local electrical neutrality. As oxygen vacancies are accumulated (i.e., during reduction), the number of oxygen vacancy-low charge cation complexes in the initial oxide increases. The total composition of the oxide phase in the range of a crystal lattice of a certain type changes continuously from the initial oxide to the end product of reduction, i.e., to the lower oxide or a metal. Therefore, it is necessary to determine the thermal characteristics of not only all possible stoichiometric compounds in the M-O system but also MO_x oxides of variable compositions. Equations for calculating the standard heat capacities of complex stoichiometric oxides and oxides of variable compositions in the Fe-O-Ti system are derived using a mathematical model developed earlier, and these characteristics are calculated.     

Low temperature and strain rate dependence of fracture stress and fracture toughness on thin Fe40Ni40B20 amorphous ribbon

The fracture stress and the critical stress intensity factor of the Fe₄₀Ni₄₀B₂₀ amorphous metallic ribbons 20 μm thick were measured in the temperature range 4.2–300 K and at deformation rates from 3.3×10⁻⁶ to 1.25×10⁻³ m⁻¹ with the aim to obtain more information on the condition for the onset and development of the inhomogeneous plastic deformation and fracture.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Replication and bonding techniques for integrated microfluidic systems

From the technical and economic points of view, systems integration, and packaging represent a crucial step in the production of microsystems. Compared to purely silicon- or glass-based systems, the variety of materials and geometries available for purely polymer microfluidic systems is much larger, due to the outstanding material properties. Moreover, polymers may be shaped and joined by comparably simple methods. Examples are polymer microreplication as well as various bonding methods. With them, complete polymer microsystems can be integrated. In addition, a number of established, compatible processes are available for the integration of functional elements that may also be made of other materials.

     

Pulse shape optimization in dispersion-limited direct detection optical fiber links

We study the theoretical limits of optical communication channels affected by chromatic dispersion. By using as a metric the energy transfer ratio, we find the optimal transmitted pulse shape that allows the impact of dispersion to be minimized. We show that these optimized pulses perform significantly better than standard nonreturn-to-zero/on-off keying (NRZ-OOK) modulation.     

Wear Resistance of Coatings from Self‐Fluxing Alloys after Laser Doping under Dry Friction Conditions

The wear resistance of Ni–Cr–B–Si–C coatings after laser treatment with a doping covering under dry friction conditions has been investigated. The microstructure of coatings after fusion by a gas burner and a laser beam and the roughness and waviness parameters of the friction surfaces before and after wear have been investigated.     

Tunneling recombination in spatially inhomogeneous structures

Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined.