Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

An improved analysis of experimental data from 125 I hot-line autoradiographs: allowing for the effects of background grains

In this paper we suggest a new statistical method of correcting the results of hot-line experiments for the effects of background sources and we use the new method to reassess the adequacy of three probability distributions proposed in the literature for image spread from line sources. The data are from sources labelled with ¹²⁵I in semi-thin resin sections 0·4-0·8 μm in thickness. The new method reveals that two of the models describe the empirical distributions more closely than earlier analysis had suggested, and it confirms an increasing relationship between half distance of image spread and the thickness of the source. However, it also confirms that considerable ‘inter hot-line’ experimental variation remains, even after background correction. This suggests that multiple experiments are needed to produce reliable estimates of half distance.     

Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe_3·5)_100−x Bi _x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.     

Transport of K in PVC matrix membranes containing valinomycin

We report impedance measurements on PVC matrix membranes which contain KBPh₄ with varying proportions of valinomycin. In agreement with our earlier measurements the value of the bulk membrane resistance (R_b) is much larger in the presence of valinomycin, indicating that the mobility of K⁺ is greatly reduced by the valinomycin. R_b shows a linear variation with valinomycin/K⁺ ratio between 0 and 1, but it is invariant at higher valinomycin/K⁺ ratios. Thus there is no evidence for a special transport mechanism for K⁺ in these membranes.