Linear block codes over cyclic groups

The main building block for the construction of a geometrically uniform coded modulation scheme is a subgroup of G^I, where G is a group generating a low-dimensional signal constellation and I is an index set. In this paper we study the properties of these subgroups when G is cyclic. We exploit the fact that any cyclic group of q elements is isomorphic to the additive group of Z_q (the ring of integers modulo q) so that we can make use of concepts related to linearity. Our attention is focused mainly on indecomposable cyclic groups (i.e., of prime power order), since they are the elementary “building blocks” of any abelian group. In analogy with the usual construction of linear codes over fields, we define a generator matrix and a parity check matrix. Trellis construction and bounds on the minimum Euclidean distance are also investigated. Some examples of coded modulation schemes based on this theory are also exhibited, and their performance evaluated     

Electronic `how things work' articles: two early prototypes

The electronic encyclopedia exploratorium (E³) is a vision of a future computer system-an electronic book describing how thing work. Typical articles in E³ will describe such mechanisms as compression refrigerators, engines, telescopes, and mechanical linkages. Each article will provide simulations, three-dimensional animated graphics that the user can manipulate, laboratory areas that allow a user to modify the device or experiment with related artifacts, and a facility for asking questions and receiving customized, computer-generated English-language explanations. Some of the foundational technology is discussed, focusing on topics in artificial intelligence, graphics, and user interfaces. The initial prototype system and the technical lessons learned from it, as well as the second prototype currently under construction, are described     

Call admission control schemes: a review

Over the last few years, a substantial number of call admission control (CAC) schemes have been proposed for ATM networks. We review the salient features of some of these algorithms. Also, we quantitatively compare the performance of three of these schemes     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Berechnung der Wirbelstromdichten und-kräfte in der Umgebung großer supraleitender Spulen für den magnetischen Einschluß bei der Kernfusion

Übersicht Um die Betriebssicherheit großer supraleitender Magnetsysteme für die Kernfusionsforschung zu gewährleisten, muß die im Magnetsystem gespeicherte Energie schnell entladen werden können. Durch die veränderlichen großvolumigen Magnetfelder werden in benachbarten leitfähigen Strukturen durch Induktion hohe Wirbelströme hervorgerufen. Durch sie treten dort elektromagnetische Kräfte. auf, die einzelne Komponenten mechanisch überlasten können. Zur Berechnung dieser Kräfte wurde eine einfache numerischanalytische Methode entwickelt, die im folgenden vorgestellt und mit Finite-Elemente-Verfahren verglichen wird.

---

Calculation of eddy current densities and forces around large superconducting coils for nuclear fusion

Contents The reliable operation of the superconducting magnet systems used for the magnetic confinement in nuclear fusion research requires the ability of a fast discharge of the stored magnetic energy. The corresponding magnetic field variation gives rise to high eddy currents by inductive coupling with surrounding conductive components. The eddy current forces can lead to a mechanical overload of some of these components. A simple numerical-analytical method was developed in order to calculate these forces. This method is presented and compared with the Finite Element Method.

     

Study of ways of reducing energy consumption in a ventilation system

Translated from Fiziko-Tekhnicheskie Problemy Razrabotki Poleznykh Iskopaemykh, No. 6, pp. 88–98, November–December, 1996.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Electroluminescent zinc sulphide devices produced by sol-gel processing

Zinc sulphide thin film electroluminescent devices doped with Mn or Tb have been produced on p-type Si substrates using a process in which doped zinc oxide films are deposited by a sol-gel drain coating method from a solution of zinc acetate containing a manganese or terbium dopant. The films are then converted to ZnS by heating them in an atmosphere containing hydrogen sulphide which replaces the oxygyn with sulphur. The composition, crystalline structure and optical properties of films have shown that complete conversion from the oxide to the sulphide takes place. The luminescent characteristics of the devices so produced have been measured as a function of the doping concentrations, film thickness, insulator thickness and driving voltage and frequency. It has been found that yellow or green luminescence can be obtained using Mn or Tb doping respectively.