Catalytic epoxidation of olefins in the presence of a vanadyl porphyrin complex

It was found that vanadyl porphyrin complexes synthesized from petroleum metal porphyrin concentrates stimulated epoxidation during the olefin oxygenation process. The yields of obtained oxiranes turned out to be 38–75%, depending on the olefin structure. An epoxidation mechanism that suggests the formation of a protonated dioxygen adduct as an intermediate during oxygenation of olefins in the presence of vanadyl porphyrin complexes was proposed. An analogy is drawn between the epoxide formation reaction upon the catalytic oxygenation of olefins and the Prilezhaev reaction.     

Note on B-splines, wavelet scaling functions, and Gabor frames

Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,.     

Methods of Verifying Continuous Automatic Belt Weighers: State and Prospects

The basic methods of verifying continuous automatic belt weighers are described. A comparative analysis of these methods on the basis of experimental studies is made and ways of implementing the results in industry are recommended.     

Experimental and modeling approaches of MR behaviors under large step strains

Rheological properties of MR fluids under large step strain shear are presented in this paper. The experiments were carried out using a rheometer with parallel-plate geometry. Under the large step strain shear, MR fluids behave as nonlinear viscoelastic properties, where the stress relaxation modulus, G(t, γ), shows a decreasing trend with step strain. The experimental results indicate that G(t, γ) obeys time-strain separability. Thus, a mathematical form based on finite exponential serials is proposed to predict MR behavior. In this model, G(t, γ) is represented as the product of a linear stress relaxation, G(t), and the damping function, h(γ), i.e. G(t, γ)=G(t) h(γ). G(t) is simply represented as a three-parameter exponential serial and h(γ) has a sigmoidal form with two parameters. The parameters are identified by adopting an efficient optimization method proposed by Stango et al. The comparison between the experimental results and the model-predicted values indicates that this mathematical model can accurately predict MR behavior.     

Java multimedia telecollaboration

Using Java-based tools in multimedia collaborative environments accessed over the Internet can increase an application's client base. Most operating systems support Java, and its "compile once-run everywhere" architecture is easy to maintain and update. The Java-based tools presented here let users share Internet resources, including resources originally designed for single use.     

State of polarization changes: Classification and measurement

We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations.     

Thermodynamic stability of GaInSb,InAsSb, and GaInP epitaxial films

The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the ranges of spinodal decomposition and lowers its critical temperature. The introduction of the phenomenological parameter into Matthews-Blakeslee formula makes it possible to reach a satisfactory agreement between theoretically calculated values of critical thickness of epitaxial films and the experimental data.     

A Digital Deformation Vacuum Gauge with an LC-Generator

The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 10⁵. The instruments developed cover the ranges 10³, 10⁴, and 10⁵ Pa.     

A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-/spl mu/m CMOS

A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth-order baseband channel select filters with programmable gain. Quadrature local oscillator (LO) signals are generated on chip in a frequency divider flip-flop. An external interstage filter between the LNAs rejects transmitter leakage to relax demodulator linearity requirements. A low-voltage demodulator topology improves linearity as well as demodulator output pole accuracy. The active-RC baseband filter uses a programmable servo loop for offset compensation and provides an adjacent channel rejection of 39 dB. Programmable gain over 71-dB range in 1-dB steps is merged with the filter to maximize dynamic range. An automatic on-chip frequency calibration scheme provides better than 1.5% corner frequency accuracy. The receiver is integrated in a 0.13-/spl mu/m CMOS process with metal-insulator-metal (MIM) capacitors. Measured receiver performance includes a 6.5-dB noise figure, IIP2 of +27 dBm, and IIP3 of -8.6 dBm. Power consumption is 45 mW.     

Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.