基于小波理论的变压器励磁涌流的研究

变压器差动保护受励磁涌流的影响,针对这一因素,该文提出一种基于小波变换的变压器励磁涌流识别新方法。首先分析了单相变压器励磁涌流的产生机理,其次使用MATLAB提供的电力系统工具箱PSB建立励磁涌流与区内故障电流的仿真模型,并脂db5小波对电流信号进行3尺度分解,仿真结果表明,小波变换系数能准确反应励磁涌流波彤的突变,最后根据仿真结果提出一个励磁涌流识别判据。     

美国船舶电台管理模式简介

为确保水上无线电通信安全,我国应加强对船舶电台的管理。本文以美国FCC为例,介绍了发达国家中较具代表性的船舶电台管理模式。     

辐射监测系统出厂验收管理

验收工作是生产制造转安装调试的关键环节,为了保证电厂辐射监测系统验收工作的顺利进行,对电厂辐射监测系统验收组织与管理方法进行总结和阐述.介绍了验收前的准备工作,验收实施过程中的抽样、试验以及设备验收注意事项与收尾事宜.验收前需要检查设备文件、提出设备硬件要求、对设备进行抽样检查;实施设备验收需进行设备外观检查、设备性能试验;验收后需完成遗留整改、设备参数的出厂设置、明确发货事宜等工作.验收过程中应注意检查的全面性,保证验收质量.其对辐射监测系统的验收管理具有一定指导意义.     

基于STM32的充电机管理单元的设计与应用

为了满足智能变电站中对充电机的管理需求,设计了一种基于STM32的充电机管理单元的设计方案。依据功能需求分析,设计了硬件构架和软件构架,研制了充电机管理单元,搭建了系统实验测试平台,实验数据表明,本设计能够实现充电机的信息采集与参数调节、本地数据显示与按键操作、远程监控双向通信、充电机逻辑控制等功能。实际应用表明其可使工作人员实时掌控充电机的工作情况,提高系统的智能化管理,且能满足实际应用的需求。     

Perfectly matched layer implementation using bilinear transform for microwave device applications

This paper presents an extensive study on the perfectly matched layer (PML) implementation using bilinear transform in the finite-difference time-domain (FDTD) simulation. The bilinear transform is used to implement both the stretched coordinate PML (SC-PML) and the uniaxial PML (UPML) with the complex frequency-shifted (CFS) equations. It is shown that with the CFS factor, the implemented SC-PML and UPML attain significantly lower relative reflection error over wide frequency range with both superior in performance to the split-field PML. The FDTD algorithm incorporating these PMLs is applied to analyze wide-band responses of some complex microwave devices, including RF microelectromechanical systems switch and coplanar waveguide crossover junction.     

北京城市大气高含氧有机分子的定量测量#br#

大气高含氧有机分子是二次有机气溶胶的重要前体物。使用气态硫酸分子作为大气高含氧有机分子的替代物评估其在硝酸根-大气常压界面化学电离飞行时间质谱离子化过程中的电离效率, 并基于高分辨率差分电迁移率粒径谱仪串联飞行时间质谱建立了质谱传输效率的矫正方法, 从而建立了大气高含氧有机分子的半定量方法。在此基础上开展了北京冬季大气高含氧有机分子的外场观测, 识别了约一百一十个大气高含氧有机分子, 表征了它们的浓度变化趋势和化学组成特征。研究发现羟基自由基在大气高含氧有机分子生成过程中具有重要作用, 而氮氧化合物也会参与其中。从挥发性分布看, 该地区冬季高含氧有机分子中归于极低挥发性有机化合物 (ELVOC) 的最多, 低挥发性有机化合物 (LVOC) 次之, 表明该地区大气高含氧有机分子在大气颗粒物上的凝结对二次有机气溶胶的形成具有重要贡献。     

移动互联网时代充值支付在新渠道快速上线的体系分析

随着网络的快速发展和手机功能的不断强大,互联网发生了用户习惯的大改变。为了更好地适应顾客消费习惯的改变,以服务赢得用户、跟随用户的步伐拓展渠道成为中国移动当前业务发展的新方向,秉持为客户提供最便利的服务的宗旨,开展建设互联网充值新渠道。文章以中国移动为例,介绍了其互联网时代充值支付在新渠道快速上线的体系,并结合当前形势进行简单的分析。     

一种减少锌渣生成的镀锌添加剂

钢丝热镀锌过程中易产生大量锌渣。为降低锌损耗,研制了一种镀锌添加剂。该添加剂可抑制亚铁离子的产生,从而减少锌渣的生成     

Simultaneous CO2 and H2O Activation via Integrated Cu Single Atom and N Vacancy Dual-Site for Enhanced CO Photo-Production

Photocatalytic conversion of CO₂ into fuels using pure water as the proton source is of immense potential in simultaneously addressing the climate-change crisis and realizing a carbon-neutral economy. Single-atom photocatalysts with tunable local atomic configurations and unique electronic properties have exhibited outstanding catalytic performance in the past decade. However, given their single-site features they are usually only amenable to activations involving single molecules. For CO₂ photoreduction entailing complex activation and dissociation process, designing multiple active sites on a photocatalyst for both CO₂ reduction and H₂O dissociation simultaneously is still a daunting challenge. Herein, it is precisely construct Cu single-atom centers and two-coordinated N vacancies as dual active sites on CN (Cu₁/N_2CV-CN). Experimental and theoretical results show that Cu single-atom centers promote CO₂ chemisorption and activation via accumulating photogenerated electrons, and the N_2CV sites enhance the dissociation of H₂O, thereby facilitating the conversion from COO* to COOH*. Benefiting from the dual-functional sites, the Cu₁/N_2CV-CN exhibits a high selectivity (98.50%) and decent CO production rate of 11.12 µmol g⁻¹ h⁻¹. An ingenious atomic-level design provides a platform for precisely integrating the modified catalyst with the deterministic identification of the electronic property during CO₂ photoreduction process.     

Study and formation of 2D microstructures of sapphire by focused ion beam milling

Dry etching of C-plane sapphire wafer has been studied using Ga⁺ focused ion beam milling (FIBM). Due to a much lower milling rate of sapphire compared to GaN, it has been proven that gas-assisted FIBM (GAFIBM) is a necessity. Furthermore, it needs to be determined whether XeF₂- or I₂-GAFIBM can improve the technique. We found that XeF₂-GAFIBM gave the highest milling rate. The obtained enhancement factor of the XeF₂-GAFIBM milling rate compared to FIBM rate varied from 2.3 to 1.2 for the ion beam current in the range 20 pA-1 nA. A favorable milling rate selectivity of sapphire to nickel film of about 1.5 was obtained by XeF₂-GAFIBM at 350 pA. We have successfully fabricated a variety of 2D sapphire-based submicron pillar or hole arrays in regular crystals, quasicrystals and aperiodic symmetries. The nearest neighbor distance was down to 230 nm. The depth achieved was deeper than 400 nm. The air filling factor ranged from 12% to 60%. These sapphire-based 2D microstructures were applied on flip-chip GaN-based light emitting diodes (LEDs) and more than 40% improvement in light extraction was obtained.