全文获取类型
收费全文 | 5582篇 |
免费 | 464篇 |
国内免费 | 216篇 |
专业分类
电工技术 | 371篇 |
综合类 | 348篇 |
化学工业 | 909篇 |
金属工艺 | 286篇 |
机械仪表 | 289篇 |
建筑科学 | 467篇 |
矿业工程 | 260篇 |
能源动力 | 134篇 |
轻工业 | 357篇 |
水利工程 | 142篇 |
石油天然气 | 283篇 |
武器工业 | 17篇 |
无线电 | 675篇 |
一般工业技术 | 739篇 |
冶金工业 | 310篇 |
原子能技术 | 67篇 |
自动化技术 | 608篇 |
出版年
2024年 | 29篇 |
2023年 | 109篇 |
2022年 | 162篇 |
2021年 | 214篇 |
2020年 | 154篇 |
2019年 | 151篇 |
2018年 | 164篇 |
2017年 | 151篇 |
2016年 | 165篇 |
2015年 | 232篇 |
2014年 | 294篇 |
2013年 | 309篇 |
2012年 | 309篇 |
2011年 | 357篇 |
2010年 | 304篇 |
2009年 | 282篇 |
2008年 | 318篇 |
2007年 | 299篇 |
2006年 | 297篇 |
2005年 | 270篇 |
2004年 | 177篇 |
2003年 | 159篇 |
2002年 | 164篇 |
2001年 | 135篇 |
2000年 | 152篇 |
1999年 | 156篇 |
1998年 | 116篇 |
1997年 | 108篇 |
1996年 | 97篇 |
1995年 | 84篇 |
1994年 | 73篇 |
1993年 | 48篇 |
1992年 | 56篇 |
1991年 | 36篇 |
1990年 | 30篇 |
1989年 | 25篇 |
1988年 | 19篇 |
1987年 | 8篇 |
1986年 | 13篇 |
1985年 | 5篇 |
1984年 | 5篇 |
1983年 | 4篇 |
1982年 | 5篇 |
1977年 | 3篇 |
1976年 | 3篇 |
1972年 | 1篇 |
1971年 | 1篇 |
1967年 | 1篇 |
1966年 | 2篇 |
1959年 | 1篇 |
排序方式: 共有6262条查询结果,搜索用时 15 毫秒
91.
92.
精密两维转镜作为激光角度欺骗干扰半实物仿真试验系统中模拟弹目、弹干扰视线运动的重要设备,其控制误差是影响视线运动模拟精度的重要因素,进而影响半实物仿真试验精度。以多体系统动力学方法推导了精密两维转镜的机电分析动力学模型,采用计算力矩法设计了两维转镜的轨迹跟踪控制器,并在Matlab/Simulink环境中对建立的反映转镜动态特性的数学模型进行了仿真,转镜方位、俯仰轴对等效正弦输入信号的角位置跟踪误差分别为2.2 mrad与3.5 mrad,结果表明:模型可实现对引导输入的角位置信号的高精度跟踪控制。 相似文献
93.
提出了一种新型带有负反馈的分段曲率校正带隙电压基准源,该基准源的主要特色是利用温度相关的电阻比技术获得一个分段曲率校正电流,校正了一阶带隙基准源的非线性温度特性. 该分段线性电流产生电路还形成了一个负反馈,以改善带隙基准源的电源抑制和线性调整率. 测试结果表明:在2.6V电源电压下,该基准源在没有采用校正的条件下,在-50~125℃温度范围内实现了最大21.2ppm/℃温度系数,电源抑制比为-60dB. 在2.6~5.6V电源电压下的线性调整率为0.8mV/V. 采用中芯国际(SMIC) 0.35μm 5V n阱数字CMOS工艺成功实现,有效芯片面积0.04mm2,其总功耗为0.18mW. 该基准源应用于3, 5V兼容的光纤接收跨阻放大器. 相似文献
94.
Dry etching of C-plane sapphire wafer has been studied using Ga+ focused ion beam milling (FIBM). Due to a much lower milling rate of sapphire compared to GaN, it has been proven that gas-assisted FIBM (GAFIBM) is a necessity. Furthermore, it needs to be determined whether XeF2- or I2-GAFIBM can improve the technique. We found that XeF2-GAFIBM gave the highest milling rate. The obtained enhancement factor of the XeF2-GAFIBM milling rate compared to FIBM rate varied from 2.3 to 1.2 for the ion beam current in the range 20 pA-1 nA. A favorable milling rate selectivity of sapphire to nickel film of about 1.5 was obtained by XeF2-GAFIBM at 350 pA. We have successfully fabricated a variety of 2D sapphire-based submicron pillar or hole arrays in regular crystals, quasicrystals and aperiodic symmetries. The nearest neighbor distance was down to 230 nm. The depth achieved was deeper than 400 nm. The air filling factor ranged from 12% to 60%. These sapphire-based 2D microstructures were applied on flip-chip GaN-based light emitting diodes (LEDs) and more than 40% improvement in light extraction was obtained. 相似文献
95.
本文分析讨论了在8PSK调制方式,EDGE需如何进行覆盖、容量和频率的规划,以达到尽量减少对现网的影响下,提高EDGE网络的整体性能. 相似文献
96.
Robust beamforming in cognitive radio 总被引:1,自引:0,他引:1
Gan Zheng Shaodan Ma Kai-Kit Wong Tung-Sang Ng 《Wireless Communications, IEEE Transactions on》2010,9(2):570-576
This letter considers the multi-antenna cognitive radio (CR) network, which has a single secondary user (SU) and coexists with a primary network of multiple users. Our objective is to maximize the service probability of the SU, subject to the interference constraints on the primary users (PUs) in the form of probability. Exploiting imperfect channel state information (CSI), with its error modeled by added Gaussian noise, we address the optimization for the beamforming weights at the secondary transmitter. In particular, this letter devises an iterative algorithm that can efficiently obtain the robust optimal beamforming solution. For the case with one PU, we show that a much simpler algorithm based on a closed-form solution for the antenna weights of a given power can be presented. Numerical results reveal that the optimal solution for the constructed problem provides an effective means to tradeoff the performance between the PUs and the SU, bridging the non-robust and worstcase based systems. 相似文献
97.
本文提出了一种应用于双通道卫星导航接收机的高效率低噪声电源解决方案,主要包括降压型DC-DC转换器和低压差稳压器。为了获得更好的噪声抑制和抗干扰性能,应用脉冲宽度调制(PWM)作为DC-DC转换器的控制方式。提出了一种改进的低功耗PWM控制电路,通过周期性的关断跨导放大器,将转换器的平均静态功耗降低了一半,并且具有较高的工作频率。针对双通道接收机的特点,对输出级功率管的尺寸进行了优化,使效率最优。另外,提出了一种基于限流原理的新型软启动电路,无须使用片外大电容或数模转换器,降低了设计复杂度。电路使用180nm CMOS工艺流片,测试结果显示,DC-DC转换器在2MHz的工作频率下拥有最高93.1%的转换效率,整个双通道接收机在3.3V电源供电下仅消耗电流20.2mA。 相似文献
98.
99.
A novel Conformal Finite-Difference Time-Domain based on Alternating-Direction Implicit Method(ADI-CFDTD) used to calculate the microwave attenuation on coplanar waveguide(CPW) with complicated cross-section up to 200GHz is presented. This ADI-CFDTD algorithm is the combination of conformal algorithm dealing with the deformed cell with ADI-FDTD, and has unconditionally stable. The difference equations are derived from the Faraday's and Ampere's law. To validate its accuracy and efficiency, as an example, a CPW fabricated on lithium niobate is proposed. Numerical results demonstrate that this new ADI-CFDTD algorithm has more accuracy than that of quasi-static and CFDTD and shows good agreement with experiment data. When frequency is up to millimeter wave band the radiation loss is not negligible in total power loss. 相似文献
100.
Dasgupta U. Wooi Gan Yeoh Chun Geik Tan Sheng Jau Wong Mori H. Singh R. Itoh M. 《Microwave Theory and Techniques》2002,50(11):2443-2452
An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/. 相似文献