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141.
A system composed of two heavy holes located in a two-dimensional (2D) quantum well (QW) and bound via mediation of an electron in a neighboring 2D QW is considered. Using a simple qualitative trial wave function, the ground-state energy of this kind of X+ trion is determined in the infinite-hole-mass approximation as a function of the QW spacing. Coordinate dependence of the effective potential binding the holes to each other is calculated for different values of QW spacing. In the adiabatic approximation, a set of dependences describing the X+ trion binding energy as a function of the electron mass to the hole mass ratio is obtained. Several estimates for the trion binding energy in GaAs-and ZnSe-based double-QW heterostructures are given. 相似文献
142.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
143.
Polycrystalline Cu(In,Ga)Se2 (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction
study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The
films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and
a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se2 type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can
be used for optimization of the CIGS film technology. 相似文献
144.
Finite element piezothermoelasticity analysis and the active control of FGM plates with integrated piezoelectric sensors and actuators 总被引:3,自引:0,他引:3
An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM
plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness
direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback
control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented
for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence
of feedback control gain on the static and dynamic responses of the FGM plates are examined.
Received: 13 March 2002 / Accepted: 5 March 2003
The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special
Administrative Region, China (Project No. CityU 1024/01E). 相似文献
145.
Examination of the wreckage of a light aircraft revealed that approximately 20 cm was missing from one tip of the aluminum
alloy propeller. Fractographic and metallographic examination of the remaining portion of the propeller revealed extensive
grain-boundary separation in the vicinity of the fracture, and grain edges and corners rounded by corrosion on the fracture
surface. Energy dispersive X-ray analysis (EDXA) revealed fluorine on, and in the vicinity of, the fracture surface. In the
ensuing litigation, it was asserted that the crash occurred because the propeller fractured in flight as the result of intergranular
attack caused by the use of a fluorine-bearing cleaner. 相似文献
146.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
147.
Fertuck Eric A.; Bucci Wilma; Blatt Sidney J.; Ford Richard Q. 《Canadian Metallurgical Quarterly》2004,41(1):13
This study examined the relation between changes in clinical functioning and changes in verbal expression in 81 seriously disturbed and treatment-resistant young adults seen in a comprehensive, psychoanalytically oriented inpatient treatment. Clinical functioning was evaluated with a battery of clinical and social measures. Verbal representations were assessed using computer-assisted scoring of Thematic Apperception Test responses. Changes in the frequency of verbal content and style in the narratives of these patients covaried with changes in clinical functioning. Significantly different covariations of verbal and clinical change, particularly differences in covariates of referential activity, were found for patients with anaclitic versus introjective personality configurations. The implications of these findings for understanding and treating severe psychopathology are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
148.
Baeyens Y. Georgiou G. Weiner J.S. Leven A. Houtsma V. Paschke P. Lee Q. Kopf R.F. Yang Yang Chua L. Chen C. Liu C.T. Young-Kai Chen 《Solid-State Circuits, IEEE Journal of》2002,37(9):1152-1159
The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product. 相似文献
149.
OA al-Swayeh MS al-Humayyd AA Mustafa AS al-Tuwaijri RS al-Rashed AT Ali 《Canadian Metallurgical Quarterly》1997,12(7):481-489
Recent evidence suggests that oxygen-derived free radicals are involved in mediating gastric microvascular and parenchymal cell injuries induced by ischaemia and reperfusion. Therefore, the effect of the locally acting anti-ulcer drug, sucralfate, was studied on ischaemia and reperfusion (e.g. induced gastric lesions, intraluminal bleeding, changes in vascular permeability and non-protein sulfhydryl levels in the rat stomach). Allopurinol was used as a known standard antioxidant drug. Rats were subjected to 30 min of gastric ischaemia in the presence of 100 mmol/L hydrochloric acid and reperfusion periods of 15, 30 or 60 min duration. The gastric lesions were assessed microscopically under an inverted microscope. The vascular permeability was quantified by measuring the extravasated Evans blue in the stomach. There were significantly greater numbers of gastric lesions, intraluminal bleeding and leakage of Evans blue during all reperfusion periods as compared with those of ischaemia, with maximum effects occurring at 60 min following reperfusion. Pretreatment with sucralfate (31.25-250 mg/kg, p.o.) or allopurinol (12.5-50 mg/kg, i.p.) 30 min before the procedure, dose-dependently reduced the gastric lesions, intraluminal bleeding, and decreased the vascular permeability induced by ischaemia and reperfusion. Furthermore, sucralfate dose-dependently reverses the ischaemia and reperfusion-induced depletion of mucosal non-protein sulfhydryl levels and inhibited the superoxide radical production in both cell-free xanthine-xanthine oxidase and in the stimulated polymorphonuclear cellular systems. These results suggest that the protection produced by sucralfate against gastric injury may be due to its antioxidant effects. 相似文献
150.
Math1 is essential for genesis of cerebellar granule neurons 总被引:1,自引:0,他引:1
N Ben-Arie HJ Bellen DL Armstrong AE McCall PR Gordadze Q Guo MM Matzuk HY Zoghbi 《Canadian Metallurgical Quarterly》1997,390(6656):169-172