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【摘要】   目的 研究和探讨125I粒子条联合胆道支架植入治疗恶性梗阻性黄疸的临床疗效。方法 2011年6月—2013年9月收治恶性梗阻性黄疸患者40例。行胆道支架植入术治疗患者18例,为对照组;采用125I粒子条联合胆道支架植入患者22例,为观察组。两组均采用经皮肝穿刺胆道引流(PTCD)并胆道支架植入。结果 观察组与对照组的平均胆道开通时间分别为(8.7 ± 0.7)和(6.2 ± 0.4)个月,两组比较差异有统计学意义(P < 0.05)。观察组与对照组术后平均生存时间分别为(11.4 ± 0.8)和(8.7 ± 0.5)个月,生存时间的差异有统计学意义(P < 0.05)。术后近期疗效及并发症两组之间的比较无明显差异(P > 0.05),但是远期疗效有显著差异(P < 0.05)。结论 与对照组相比,观察组的术后生存时间及胆道开通时间明显延长,对于125I粒子条联合支架治疗恶性梗阻性黄疸值得进一步临床研究。
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International Journal of Information Security - Data integrity is a critical security issue in cloud storage. The data integrity checking schemes by a third-party auditor (TPA) have attracted a lot...  相似文献   
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The electrochemical water splitting to produce H2 in high efficiency with earth-abundant-metal catalysts remains a challenge. Here, we describe a simple “cyclic voltammetry + ageing” protocol at room temperature to activate Ni electrode (AC-Ni/NF) for hydrogen evolution reaction (HER), by which Ni/Ni(OH)2 heterostructure is formed at the surface. In situ Raman spectroscopy reveals the gradual growth of Ni/Ni(OH)2 heterostructure during the first 30 min of the aging treatment and combined with polarization measurements, it suggests a positive relation between the Ni/Ni(OH)2 amount and HER performance of the electrode. The obtained AC-Ni/NF catalyst, with plentiful Ni–Ni(OH)2 interfaces, exhibits remarkable performance towards HER, with the low overpotential of only 30 mV at a H2-evolving current density of 10 mA/cm2 and 153 mV at 100 mA/cm2, as well as a small Tafel slope of 46.8 mV/dec in 1 M KOH electrolyte at ambient temperature. The excellent HER performance of the AC-Ni/NF could be maintained for at least 24 h without obvious decay. Ex situ experiments and in situ electrochemical-Raman spectroscopy along with density functional theory (DFT) calculations reveal that Ni/Ni(OH)2 heterostructure, although partially reduced, can still persist during HER catalysis and it is the Ni–Ni(OH)2 interface reducing the energy barrier of H1 adsorption thus promoting the HER performance.  相似文献   
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Ni2+ modified MgTa2O6 ceramics with a trirutile phase and space group P42/mnm were obtained. The correlations between crystallographic characteristics and microwave dielectric performance of MgTa2O6 ceramics were systematically studied based on the chemistry bond theory (PVL theory) for the first time. The results indicate that the introduction of Ni2+ causes a change in polarizability and the Mg–O bond ionicity, which contributes to the variation of dielectric constant. Moreover, the lattice energy, and packing fraction, full width at half maximum of the Raman peak of Ta–O bond, as the quantitative characterization of crystallographic parameters, regulate the dielectric loss of MgTa2O6 ceramics in GHz frequency band. In addition, the study of sintering behavior shows that the densification and micromorphology are the crucial factors affecting the microwave dielectric performance. Typically, Ni2+ doping on the A-site of MgTa2O6 can effectively promote the Q × f values to 173,000 GHz (at 7.43 GHz), which ensures its applicability in 5G communication technology.  相似文献   
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Mg(1-x)ZnxTa2O6 (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg(1-x)ZnxTa2O6 phase with trirutile structure was formed. Zn2+ substitution helped to decrease the Raman full width at half width of the A1g mode at 703 cm?1, which resulted in an increase in the order and rigidity of the TaO6 octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn2+ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO6 octahedron in the Mg(1?x)ZnxTa2O6 system, which contributed to enhanced τf values via substitution of Zn2+ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: εr = 27, Q × f = 185,000 GHz (at 7.47 GHz), τf =32 ppm/°C.  相似文献   
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