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131.
定向井井眼轨道预测方法研究及其应用 总被引:2,自引:0,他引:2
对定向井片眼轨道进行预测是实现井眼轨道定量控制的关键.本文提出了井眼轨道预测控制的力-位移模型.在此基础上,建立了描述侧向切削问题的多元幂积模式,推导了预测井斜、方位及其变化率的基本预测公式,形成了井眼轨道预测控制系统,并进一步研制了适于井场快速预测的自适应信号跟踪顶测软件,针对IBM-PC微机,开发了定向井井眼控制预测软件包DTCPS.多例预测实践表明,使用该软件包预测井眼轨道,精度较高,相符程度较好. 相似文献
132.
动态聚焦技术是为了满足大屏幕高分辨率彩色显像管及高分辨率彩色显示管的发展需求而产生的一项新技术。在本文中,作者首先提出了一种动态聚焦电子枪结构,进行了数值计算与分析,制作了动态聚焦电子枪并装管实验。通过对实验样管的测试与分析。证实该枪性能良好,动态聚集效果明显。 相似文献
133.
The kinetics of the transition metal-catalysed direct addition of amine NH bonds to carbon--carbon multiple bonds (hydroamination) has been explored by in situ spectroscopic techniques. From an open mass balance it was concluded that an intermediate species was formed during the cyclisation of 6-aminohex-1-yne. This species was identified as the enamine 2-methylene-piperidine, which is the primary hydroamination product. 相似文献
134.
Numerous power utilities have installed advanced distributed temperature sensing (DTS) systems to measure the temperature of underground cables. This paper presents a general procedure for real-time assessment of underground cable ratings based on DTS. After the identification and location of hot spots on a cable, the cable installation data, load, and DTS-recorded temperature over a period of time are used to estimate soil thermal parameters and assess cable ratings under normal and overloading conditions. In order to accurately estimate soil thermal parameters, a combined technique of the finite-element method and gradient-based optimization is used. The technique was validated in the laboratory and applied to a rating assessment of a 230-kV/500-MVA cable circuit. The assessed continuous and emergency ratings are helpful in improving the operation of this circuit. 相似文献
135.
Yu-Zung Chiou Yan-Kuin Su Shoou-Jinn Chang Yi-Chao Lin Chia-Sheng Chang Chin-Hsiang Chen 《Solid-state electronics》2002,46(12):2227-2229
InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 105 when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively. 相似文献
136.
钼还原过程相变化研究 总被引:5,自引:0,他引:5
采用钼酸铵直接氢还原及钼酸铵先焙解然后再分段氢还原两种不同的还原方法进行了钼粉还原。通过X射线衍射方法分析了两种工艺还原过程中的反应序列及相变化规律,并讨论了不稳定相Mo4O11对于钼粉还原过程的影响。 相似文献
137.
本市第二毛纺厂中南楼是一幢三层四跨的纯框架结构,它在1976年7月28日的唐山地震中,结构遭受了严重的破坏.后经过加固,在同年的11月15日的宁河地震作用下,房屋全部倒塌,笔者利用平面杆系模型,对其结构进行弹塑性分析,以期得到影响该房屋倒塌的因素。 相似文献
138.
Measurement and modeling of self-heating in SOI nMOSFET's 总被引:4,自引:0,他引:4
Su L.T. Chung J.E. Antoniadis D.A. Goodson K.E. Flik M.I. 《Electron Devices, IEEE Transactions on》1994,41(1):69-75
Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries 相似文献
139.
Ching-Chuan Su Jenn-Ming Guan 《Microwave Theory and Techniques》1994,42(10):1998-2006
A numerical procedure using the finite-difference technique, simultaneous iteration based on the power method, and the Chebyshev-polynomial preconditioning is proposed to analyze dielectric-loaded cavities. The merit of this method is that no matrix inversions are invoked and the convergence rate of the power method is greatly accelerated by the preconditioning. The TE, TM, and hybrid modes in axisymmetrical cavities loaded with a rod or ring dielectric resonator are analyzed. For the hybrid modes, an Hr-Hz formulation is proposed. Accurate numerical results are obtained efficiently and no spurious solutions are found by the present method 相似文献
140.
The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied 相似文献