Effect of hydrogen on interface of metal–semiconductor Schottky diode

The effect of hydrogen on p-type Si/Mn and Si/Co Schottky diode has been investigated in present studies. The variations of I–V characteristics suggested that the rectifying act of these diodes change with variation of hydrogen pressure, which is due to the diffusion of hydrogen through the Mn and Co metal films up to Si surface or a creation of surface states at the interface. It is also observed that the effect of hydrogen found to be reverse in order for forward as well as reverse direction of current in Mn and Co deposited films on Si substrate, corresponding to anionic and protonic model of hydrogen interaction with metals. One can say that hydrogen plays an amphoteric role to neutralize either donors or acceptors level in semiconductors and metals. The Raman spectra of Si/Mn and Si/Co are taken and stoke lines link with the presence of hydrogen is observed. In this paper, we are presenting the role of hydrogen pressure on I–V characteristics at the interface of metal–semiconductor structure.     

Stabilizing Sensor Data Collection for Control of Environment-Friendly Clean Technologies Using Internet of Things

Wireless Personal Communications - The Internet of Things (IoT) is a network formed by smart devices whose core contains embedded technology in order to collect sensory information and exchange it...     

Gate leakage current reduction in IP3 SRAM cells at 45 nm CMOS technology for multimedia applications

We have presented an analysis of the gate leakage current of the IP3 static random access memory (SRAM) cell structure when the cell is in idle mode (performs no data read/write operations) and active mode (performs data read/write operations), along with the requirements for the overall standby leakage power, active write and read powers. A comparison has been drawn with existing SRAM cell structures, the conventional 6T, PP, P4 and P3 cells. At the supply voltage, V_DD = 0.8 V, a reduction of 98%, 99%, 92% and 94% is observed in the gate leakage current in comparison with the 6T, PP, P4 and P3 SRAM cells, respectively, while at V_DD = 0.7 V, it is 97%, 98%, 87% and 84%. A significant reduction is also observed in the overall standby leakage power by 56%, the active write power by 44% and the active read power by 99%, compared with the conventional 6T SRAM cell at V_DD = 0.8 V, with no loss in cell stability and performance with a small area penalty. The simulation environment used for this work is 45 nm deep sub-micron complementary metal oxide semiconductor (CMOS) technology, t_ox = 2.4 nm, V_thn = 0.22 V, V_thp = 0.224 V, V_DD = 0.7 V and 0.8 V, at T = 300 K.     

Effect of voltage sweep direction on the performance evaluation of P3HT : PCBM solar cells

Investigations on the effect of direction of voltage sweeps, on the current density–voltage (J–V) characteristics in polymer bulk‐heterojunction solar cells, based on the blend of poly(3‐hexylthiophene) (P3HT) and phenyl [6,6] C₆₁ butyric acid methyl ester (PCBM), are reported with time. On the freshly prepared device, the direction of the voltage sweep did not have any effect; however, as the device started degrading, the change in direction of the voltage sweep resulted into different characteristics. Analysis beyond complete degradation, when all the photovoltaic parameters reduced to zero, revealed some interesting results. The J–V characteristics, measured with voltage sweep from −ve to +ve voltage, both in the dark and under illumination, were observed to pass through the second quadrant. On the other hand, with the change in the direction of voltage sweep, viz. from +ve to −ve voltage, the characteristics both in the dark and under illumination passed through the fourth quadrant. These results have been explained on the basis of polarization of the degraded active layer due to applied external voltage. This is an important effect and is observed to depend on the applied voltages during performance evaluation and becomes more prominent with time. This effect puts a question mark on the correctness of the method for calculation of the parameters of a degraded device. Studies on degradation of P3HT : PCBM solar cells showed that both the short circuit current density (J_sc) and the power conversion efficiency (η) decay exponentially, whereas the open circuit voltage (V_oc) decays almost linearly with time. Copyright © 2012 John Wiley & Sons, Ltd.     

Shorting pin loaded dual-band compact rectangular microstrip antenna

Theoretical and experimental investigations carried out on shorted microstrip patch antenna for dual band operation. The investigations were carried out by varying the shorting-pin position from the edge to the centre of the patch; such an antenna provides a frequency tunability range from 0.88?GHz to 1.08?GHz for first resonance and from 2.20?GHz to 2.59?GHz for second resonance. A frequency ratio of about 2.91 to 2.2 for the two operating frequencies is observed. When the shorting-pin position is close to centre or at the centre of the patch, a single resonant frequency is observed. It is also observed that the resonant frequency of the antenna heavily depends upon the thickness of the substrate, dielectric constant of the substrate and radius of the shorting-pin.     

Fast complex memory polynomial-based adaptive digital predistorter

Today's 3G wireless systems require both high linearity and high power amplifier (PA) efficiency. The high peak-to-average ratios of the digital modulation schemes used in 3G wireless systems require that the RF PA maintain high linearity over a large range while maintaining this high efficiency; these two requirements are often at odds with each other with many of the traditional amplifier architectures. In this article, a fast and easy-to-implement adaptive digital predistorter has been presented for Wideband Code Division Multiplexed signals using complex memory polynomial work function. The proposed algorithm has been implemented to test a Motorola LDMOSFET PA. The proposed technique also takes care of the memory effects of the PA, which have been ignored in many proposed techniques in the literature. The results show that the new complex memory polynomial-based adaptive digital predistorter has better linearisation performance than conventional predistortion techniques.     

An Adaptive Prediction Strategy with Clustering in Wireless Sensor Network

In Wireless Sensor Network, sensed data reflects two types of correlations of physical attributes: spatial and temporal. In this paper, a scheme named, Adaptive Prediction Strategy with ClusTering (APSCT) is proposed. In APSCT, a data-driven clustering and grey prediction model is used to exploit both the correlations. APSCT minimizes the transmission of messages in the network. However, the use of prediction includes additional computation overhead. There is a trade-off between prediction accuracy and energy consumption in computation and communication in wireless networks. This paper also gives an approach to calculate the upper and lower bound of the prediction interval which is used to evaluate different confidence levels and provides an energy-efficient sensor environment. Simulation is carried out on real-world data collected by Intel Berkeley Lab and results are compared with existing approaches.

     

Time delays and angles of arrival estimation using known signals

Channel estimation in a multipath mobile communication system is addressed in this paper, and a novel approach based on the linear prediction in frequency domain and the singular value decomposition technique is presented for joint estimation of the angles of arrival and the time delays of multiple reflections of a known signal. Simulation results illustrating the performance of the proposed algorithm are included, and the results show that the proposed method is close in accuracy when compared to the iterative maximum-likelihood method. However, when the two methods are compared in computational complexity, it is demonstrated that the proposed method reduces the complexity to nearly half of that of the maximum-likelihood method. The Cramer–Rao bounds are computed for comparison.     

Mie‐Resonant Membrane Huygens' Metasurfaces

All‐dielectric metasurfaces have become a new paradigm for flat optics as they allow flexible engineering of the electromagnetic space of propagating waves. Such metasurfaces are usually composed of individual subwavelength elements embedded into a host medium or placed on a substrate, which often diminishes the quality of the resonances. The substrate imposes limitations on the metasurface functionalities, especially for infrared and terahertz frequencies. Here a novel concept of membrane Huygens' metasurfaces is introduced. The metasurfaces feature an inverted design, and they consist of arrays of holes made in a thin membrane of high‐index dielectric material, with the response governed by the electric and magnetic Mie resonances excited within dielectric domains of the membrane. Highly efficient transmission combined with the 2π phase coverage in the freestanding membranes is demonstrated. Several functional metadevices for wavefront control are designed, including beam deflector, a lens, and an axicon. Such membrane metasurfaces provide novel opportunities for efficient large‐area metadevices, whose advanced functionality is defined by structuring rather than by chemical composition.