Susceptible Workload Evaluation and Protection using Selective Fault Tolerance

Low power fault tolerance design techniques trade reliability to reduce the area cost and the power overhead of integrated circuits by protecting only a subset of their workload or their most vulnerable parts. However, in the presence of faults not all workloads are equally susceptible to errors. In this paper, we present a low power fault tolerance design technique that selects and protects the most susceptible workload. We propose to rank the workload susceptibility as the likelihood of any error to bypass the logic masking of the circuit and propagate to its outputs. The susceptible workload is protected by a partial Triple Modular Redundancy (TMR) scheme. We evaluate the proposed technique on timing-independent and timing-dependent errors induced by permanent and transient faults. In comparison with unranked selective fault tolerance approach, we demonstrate a) a similar error coverage with a 39.7% average reduction of the area overhead or b) a 86.9% average error coverage improvement for a similar area overhead. For the same area overhead case, we observe an error coverage improvement of 53.1% and 53.5% against permanent stuck-at and transition faults, respectively, and an average error coverage improvement of 151.8% and 89.0% against timing-dependent and timing-independent transient faults, respectively. Compared to TMR, the proposed technique achieves an area and power overhead reduction of 145.8% to 182.0%.     

Boosting Infrared Light Harvesting by Molecular Functionalization of Metal Oxide/Polymer Interfaces in Efficient Hybrid Solar Cells

Hybrid solar cells based on light absorbing semiconducting polymers infiltrated in nanocrystalline TiO₂ electrodes, have emerged as an attractive concept, combining benefits of both low material and processing costs with well controlled nano‐scale morphology. However, after over ten years of research effort, power conversion efficiencies remain around 0.5%. Here, a spectroscopic and device based investigation is presented, which leads to a new optimization route where by functionalization of the TiO₂ surface with a molecular electron acceptor promotes photoinduced electron transfer from a low‐band gap polymer(poly[2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b0]dithiophene)‐alt‐4,7‐(2,1,3‐benzothiadia‐zole)] (PCPDTBT) to the metal oxide. This boosts the infrared response and the power conversion efficiency to over 1%. As a further step, by “co‐functionalizing” the TiO₂ surface with the electron acceptor and an organic dye‐sensitizer, panchromatic spectral photoresponse is achieved in the visible to near‐IR region. This novel architecture at the heterojunction opens new material design possibilities and represents an exciting route forward for hybrid photovoltaics.     

n+-SnO2/a-SiC:H/metal thin-film photodiodeswith voltage-controlled spectral sensitivity

n⁺-SnO₂/a-SiC/metal photodiodes with voltage-controlled photosensitivity have been realized by using both carbon-rich and silicon-rich a-SiC alloys. Carbon-rich devices show a response peak located at 530 nm independent of the applied voltage, which in turn only affects the peak height. At variance, in silicon-rich structures the response peak is located at 480, 510, and 570 nm when the applied voltage is -4, 0, and +4 V, respectively, with corresponding quantum yield values of 17, 3, and 25%. For explaining the observed behavior we present a simple model of n⁺-SnO₂/a-SiC/metal diodes, which takes into account light-induced modulation of n⁺-SnO₂/a-SiC barrier height, primary photocurrent generation and photoconductivity effects     

Understanding and Predicting Data Hotspots in Cellular Networks

The unprecedented growth in mobile data usage is posing significant challenges to cellular operators. One key challenge is how to provide quality of service to subscribers when their residing cell is experiencing a significant amount of traffic, i.e. becoming a traffic hotspot. In this paper, we perform an empirical study on data hotspots in today’s cellular networks using a 9-week cellular dataset with 734K+ users and 5327 cell sites. Our analysis examines in details static and dynamic characteristics, predictability, and causes of data hotspots, and their correlation with call hotspots. We show that using standard machine learning methods, future hotspots can be accurately predicted from past observations. We believe the understanding of these key issues will lead to more efficient and responsive resource management and thus better QoS provision in cellular networks. To the best of our knowledge, our work is the first to empirically characterize traffic hotspots in today’s cellular networks.     

Multimodal Bioactivation of Hydrophilic Electrospun Nanofibers Enables Simultaneous Tuning of Cell Adhesivity and Immunomodulatory Effects

Biomaterials research usually focuses on functional and structural mimicry of the extracellular matrix or tissue hierarchy and morphology. Most recently, material‐induced modulatory effects on the immune system to arouse a healing response is another upcoming strategy. Approaches, however, that integrate both aspects to induce healing and facilitate specific cell adhesion are so far little explored. This study exploits manifold but chemical crosslinker free functionalization of hydrophilic and nonadhesive electrospun fiber surfaces with peptides for controlled cell adhesion, and with neutra­lizing antibodies targeting the master cytokine tumor necrosis factor (TNF) to dampen proinflammatory reactions by the fiber adherent cells. It is demonstrated that cell attachment and immunomodulatory properties of a textile can be tailored at the same time to generate meshes that combine immunosuppressive activity with specific cell adhesion properties.     

SR ARQ packet delay statistics on markov channels in the presence of variable arrival rate

In this letter we investigate the packet delay statistics of a fully reliable selective repeat ARQ scheme by considering a discrete time Markov channel with non-instantaneous feedback and assigned round-trip delay m. Our focus is on studying the impact of the arrival process on the delay experienced by a packet. An exact model is introduced to represent the system constituted by the transmitter buffer, the m round-trip slots, and the channel state. By means of this model, we evaluate and discuss the delay statistics and we analyze the impact of the system parameters, in particular the packet arrival rate, on the delay statistics     

The Role of Higher Lying Electronic States in Charge Photogeneration in Organic Solar Cells

The role of excess photon energy on charge generation efficiency in bulk heterojunction solar cells is still an open issue for the organic photovoltaic community. Here, the spectral dependence of the internal quantum efficiency (IQE) for a poly[2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b]­dithiophene)‐alt‐4,7‐(2,1,3‐benzothiadiazole)]:6,6‐phenyl‐C₆₁‐butyric acid methyl ester (PCPDTBT:PC60BM)‐based solar cell is derived combining accurate optoelectronic characterization and comprehensive optical modeling. This joint approach is shown to be essential to get reliable values of the IQE. Photons with energy higher than the bandgap of the donor material can effectively contribute to enhance the IQE of the solar cell. This holds true independently of the device architecture, reflecting an intrinsic property of the active material. Moreover, the nanomorphology of the bulk heterojunction plays a crucial role in determining the IQE spectral dependence: the coarser and more crystalline, the lesser the gain in IQE upon high energy excitation.     

Oscillation of the scattering time in a 2D electron system with oval antidots

Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement.     

A fully integrated 0.18-/spl mu/m CMOS direct conversion receiver front-end with on-chip LO for UMTS

This paper presents a 0.18-/spl mu/m CMOS direct-conversion IC realized for the Universal Mobile Telecommunication System (UMTS). The chip comprises a variable gain low-noise amplifier, quadrature mixers, variable gain amplifiers, and local oscillator generation circuits. The solution is based on very high dynamic range front-end blocks, a low-power superharmonic injection-locking technique for quadrature generation and continuous-time dc offset removal. Measured performances are an overall gain variable between 21 and 47 dB, 5.6 dB noise figure, -2 dBm out-of-band IIP3, -10 dBm in-band IIP3, 44.8-dBm minimum IIP2, and -155-dBc/Hz phase noise at 135 MHz from carrier frequency, while drawing 21 mA from a 1.8-V supply.     

Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing

Memristive devices based on mixed ionic–electronic resistive switches have an enormous potential to replace today's transistor‐based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains unclear however how ionic carriers are propagated in amorphous oxide films at high local electric fields. By using memristive model devices based on LaFeO₃ with either amorphous or epitaxial nanostructures, we engineer the structural local bonding units and increase the oxygen‐ionic diffusion coefficient by one order of magnitude for the amorphous oxide, affecting the resistive switching operation. We show that only devices based on amorphous LaFeO₃ films reveal memristive behavior due to their increased oxygen vacancy concentration. We achieved stable resistive switching with switching times down to microseconds and confirm that it is predominantly the oxygen‐ionic diffusion character and not electronic defect state changes that modulate the resistive switching device response. Ultimately, these results show that the local arrangement of structural bonding units in amorphous perovskite films at room temperature can be used to largely tune the oxygen vacancy (defect) kinetics for resistive switches (memristors) that are both theoretically challenging to predict and promising for future memory and neuromorphic computing applications.