Analysis of spontaneous and double-strand break-induced recombination in rad mutants of S. pombe

Schizosaccharomyces pombe strains containing direct repeats of adeó heteroalleles separated by a functional uro4+ gene, and a DNA site for induction of a double-strand break (DSB), have been used to analyze pathways of spontaneous and DSB-induced intrachromosomal mitotic recombination. These substrates yield Ade+ Ura+ convertants or Ade+ Ura- deletions, by the DSB/gap repair and single-strand annealing (SSA) pathways of recombination, respectively. In S. cerevisiae, the DSB/gap repair pathway is RAD52 dependent, and the RAD1 and RAD10 genes are involved in the SSA pathway. We have sought to understand the genetic control of the pathways of mitotic recombination in S. pombe by determining the effects of mutations in six rad genes involved in DNA repair: rad1 and rad3 involved in checkpoint control in response to unreplicated or damaged DNA; rad5 (homologue of S. cerevisiae RAD3) and rad10 (homologue of S. cerevisiae RAD1) involved in nucleotide excision repair; rad21 and rad22 (homologue of S. cerevisiae RAD52) involved in the repair of ionizing radiation-induced DNA damage. The results suggest that the genetic control of the pathways of spontaneous and DSB-induced mitotic intrachromosomal recombination in S. pombe is different from that in S. cerevisiae.     

Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

The anomalous off-current (I_off) in polysilicon thin film transistors (polysilicon TFTs) is one of the major problems preventing a wide use of these devices in active matrix liquid crystal displays. While previous investigations have focused on the temperature range above 300 K, in this study we have investigated the behaviour of I_off over a wide range of temperatures, namely 180–400 K. The data have been analysed by combining 2D simulations and existing analytic models. By this approach we have identified a pure trap-to-band tunnelling mechanism in polysilicon TFTs and deduced, by a simple procedure, the physical constants. The temperature and bias dependence of the off-current has been explained quantitatively in terms of phonon-assisted tunnelling. The number of generating centres, the dominant trap energy and the thermal capture cross section are deduced from this analysis.     

Linearity and sensitivity of MIS position sensitive detectors

The linearity and sensitivity of linear Position Sensitive Detectors (PSD) are the two principal characteristics of sensors to be optimised in sensor fabrication. This work presents several efforts made to understand the internal and external parameters that influence the linearity and sensitivity of Metal Insulator Semiconductor (MIS) linear PSD with an active length of 6 cm. The use of long sensitive areas allows the PSD to achieve greater resolution without the need of a highly accurate light spot integration mechanism. The PSD is built in a multi-layered structure consisting of Cr/a-Si:H (n⁺ doped)/a-Si:H (intrinsic)/SiO_x (passivation layer)/Au, where the active a-Si:H layers were deposited by Modified Triode Plasma Enhanced Chemical Vapour Deposition (MTPECVD), which allows the deposition of good electronic grade material with a low (≈1 × 10¹⁵ cm^{− 3}) defect density inferred by CPM. The sensor linearity and sensitivity shows dependence on the sensor width to length ratio, SiO_x layer and on the value of the load resistance. Sensitivities of more than 30 mV/cm were achieved with linearity near 99%. Besides that, this type of MIS structure allows an improved spectral response in the near-UV region and has its maximum response at 540 nm.     

Formation of poly(butylene terephthalate): growing reactions studied by model molecules

The growing reactions in the formation of poly(butylene terephthalate) have been studied from a kinetic viewpoint with the aid of model molecules. The dependence of the reaction rates on temperature and on the presence of a catalyst (titanium tetrabutylate) and/or of benzoic acid, which shows an inhibition effect, are discussed. A coordinative reaction mechanism is suggested.     

Effect of Thermal Treatment on the Photocatalytic Activity in Visible Light of TiO<Subscript>2</Subscript>-W Flame Spray Synthesised Nanopowders

Effect of W doping as well as a thermal treatment on the structural and photocatalytic properties of TiO₂ produced by flame spray synthesis (FSS) were the subject of investigation. Structural properties were studied by means of X-ray diffraction (XRD), BET adsorption isotherm and transmission electron microscopy (TEM). The surface condition was investigated by X-ray photoelectron spectroscopy (XPS) and differential scanning calorimetry (DSC) and differential thermal and thermogravimetric analysis (DTA-TGA). The photocatalytic properties were studied by optical measurements and photodecomposition of methylene blue under visible irradiation. It was found that the photoactivity in the visible region was enhanced significantly by the W-doping as well as by additional thermal treatment of those nanopowders. The obtained TiO₂-W nanopowders exhibited higher performance under visible light than P25.     

Touch‐Interactive Flexible Sustainable Energy Harvester and Self‐Powered Smart Card

Sustainable and safe energy sources combined with cost effectiveness are major goals for society when considering the current scenario of mass production of portable and Internet of Things (IoT) devices along with the huge amount of inevitable e‐waste. The conceptual design of a self‐powered “eco‐energy” smart card based on paper promotes green and clean energy, which will bring the zero e‐waste challenge one step closer to fruition. A commercial raw filter paper is modified through a fast in situ functionalization method, resulting in a conductive cellulose fiber/polyaniline composite, which is then applied as an energy harvester based on a mechano‐responsive charge transfer mechanism through a metal/conducting polymer interface. Different electrodes are studied to optimize charge transfer based on contact energy level differences. The highest power density and current density obtained from such a paper‐based “eco‐energy” smart card device are 1.75 W m^?2 and 33.5 mA m^?2 respectively. This self‐powered smart energy card is also able to light up several commercial light‐emitting diodes, power on electronic devices, and charge capacitors.     

Performance Evaluation of Packet Mobile Communications through Level Crossing Analysis

In this paper the performance of a packet mobile radio network is studied inthe presence of shadow fading outage intervals.Under quite general assumptions for the medium access protocol,the probability mass function of the sequence of packets that may be lostdue to an outage interval is derived. It is seen that long sequences of lostpackets are likely to occur for typical values of the mobile speed andshadowing correlation parameters.For delay constrained sources, e.g., voice, the analysis is mainly focused atderiving the probability function of the sequence of dropped packetsand the probability of dropping. For data sources, the delay statistic isalso derived. In the latter case, the effect of finite buffer length isaddressed. Simulation is used to verify the accuracy of approximations introduced in the analysis.     

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (∼20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film.     

Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature

Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O₂ vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01% (3.5 O₂ vol. %); whereas this transmittance was decreased with the increasing O₂ vol. % to as low as 81.04% (15.6 O₂ vol. %); a maximum of 89.80% was obtained from the films annealed at 500 °C in open air (3.5 O₂ vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O₂ vol. % to as high as 3.91 eV (17.5 O₂ vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 °C in N₂:H₂ gas atmosphere (17.5 O₂ vol. %).