Word2000应用技巧示例

通过几个典型范例,阐述了Word2000的一些使用技巧。     

Stability study on naturally filling body in gob-side entry retaining

In the construction of the filling gob-side entry retaining in a lane, we utilize the self-slide natural phenomenon of a falling gangue in an inclined coal seam goaf. First, we put the falling gangue of goaf above the laneway and made it the main filling material by adopting the measurement of flexible supporting system combined with those of rigid supporting system. Then we made the filling material gunited and solidified to maintain the filling goal of the gob-side entry retaining beside the lane. Considering the law of energy conservation and law of pressure distribution for retaining the active and static soil of the wall, we analyzed the reliability of a gangue blocking facilities and the stability of the filling material in the lane. We analyze the figures to see the stability. The result shows that the gangue block supporting system is reliable, and has been successfully practically applied.     

机载电缆作战损毁后智能化诊断系统

从技战术实际需要出发,给出了某型飞机作战损毁后机载电缆的智能化诊断系统的硬件结构框图。根据硬件系统模拟开关组件的原理,定义了电缆的连接矩阵、测量矩阵以及断口的映像矩阵运算,给出了断头查找的算法。计算表明,系统可在20 min内完成一个循环的断头查找并给出故障定位。     

CCD传感器测试钢丝直径

介绍ＣＣＤ（ｃｈａｒｇｅｃｏｕｐｌｅｄｄｅｖｉｃｅｓ）传感器与激光光源、成象系统、二值化电路、电子计算机等组成的钢丝直径测试装置的工作原理、光学系统自动选择和检测电路系统及其优越的工作性能、广阔的应用前景。     

X-ray photoelectron spectroscopy characterization of the interface between Ag electrode and PVDF film treated by electric poling

Interface changes induced by electric poling treatment between an Ag electrode deposited by vacuum thermal evaporation and a polymer thin film have been investigated. The polymer film poly (vinylidene fluoride) (PVDF), a fluoropolymer of repeat unit (–CH₂–CF₂–) was treated under electric poling at high temperature of 90°C. The characterization was accomplished using X-ray photoelectron spectroscopy (XPS) as a primary tool. The results indicate that the piezoelectricity of PVDF thin films and adhesion force between polymer thin film and metallic electrode are improved by electric poling and chemical bond joint.     

Complete stability of cellular neural networks with time-varying delays

In this paper, the complete stability of cellular neural networks with time-varying delays is analyzed using the induction method and the contraction mapping principle. Delay-dependent and delay-independent conditions are obtained for locally stable equilibrium points to be located anywhere, which differ from the existing results on complete stability where the existence of equilibrium points in the saturation region is necessary for complete stability and locally stable equilibrium points can be in the saturation region only. In addition, some existing stability results in the literature are special cases of a new result herein. Simulation results are also discussed by use of two illustrative examples.     

基于测度贴近度的电子剪切散斑轮胎检测

本文把测度贴近度的概念引进到电子剪切散斑检测中,提出了一种基于测度贴近度的条纹形成算法。该算法大大地消除了条纹可见度对光照强度的依赖,提高了电子剪切散斑无损检测对工业环境的适应性,并且该算法可以在条纹产生的同时对其进行滤波,减轻了后续工作。本文从数学分析和实验两个角度证实了该算法的以上特点。     

SUPANET的入网控制技术

本文以西南交通大学四川省网络通信技术重点实验室提出的“单物理层用户数据传输平面的体系结构”(SUPA)为背景,通过分析比较现存的各种接纳控制策略和算法,提出了适合SUPA的接纳控制策略和算法。     

DEH控制系统在125 MW汽轮机上的应用

介绍了江西贵溪发电厂国产125MW机组调速系统的低压透平油纯电调改造的意义、方案选择及各相关系统的改造内容。改造后机组的运行情况良好，低压透平油纯电调改造，具有简单、实用、经济、可靠的特点，对同类型机组的技术改造具有借鉴意义。     

Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.