油田放射性作业人员外周血淋巴细胞染色体畸变的观察

本文调查了油田212例受γ射线和中子混合辐射照射的作业人员和30例正常人的外周血淋巴细胞染色体畸变。作业人员受γ射线照射的人均年受照剂量为1.28mGy。调查结果表明,放射性测井人员与正常人相比染色体畸变率有显著差异。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.     

刊首语

今天本刊以全新的面貌呈现于广大读者面前,这是杂志成长过程中的羽化新生。2006年9月,经国家新闻出版总署批准,《中国农村水电及电气化》杂志正式更名为《中国水能及电气化》。作为水利部主管的行业期刊,杂志的更名是主办单位水利部水电局贯彻落实科学发展观和《可再生能源法》     

SIDAC双向开关触发器的典型应用

详细介绍了SIDAC作为一种高压双向触发器的工作特点及其典型的应用电路。     

Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

Abstract The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plantsobtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We cansee that the whole DNA of soybean transformed into wheat via ion beam implantation can inducethe increase in wheat protein content dramatically. The result also shows that the transformationefficiency of different gene types of wheat receptor varies greatly that the implanting time has acertain effect on the efficiency of transformation.