Plasmon‐Induced Hot Carrier Separation across Dual Interface in Gold–Nickel Phosphide Heterojunction for Photocatalytic Water Splitting

Precise control of the topology of metal nanocrystals and appropriate modulation of the metal–semiconductor heterostructure is an important way to understand the relationship between structure and material properties for plasmon‐induced solar‐to‐chemical energy conversion. Here, a bottom‐up wet chemical approach to synthesize Au/Ni₂P heterostructures via Pt‐catalyzed quasi‐epitaxial overgrowth of Ni on Au nanorods (NR) is presented. The structural motif of the Ni₂P is controlled using the aspect ratio of the Au NR and the effective micelle concentration of the C₁₆TAB capping agent. Highly ordered Au/Pt/Ni₂P nanostructures are employed as the photoelectrocatalytic anode system for water splitting. Electrochemical and ultrafast absorption spectroscopy characterization indicates that the structural motif of the Ni₂P (controlled by the outer‐shell deposition of Ni) helps to manipulate hot electron transfer during surface plasmon decay. With optimized Ni₂P thickness, Pt‐tipped Au NR with an aspect ratio of 5.2 exhibits a geometric current density of 10 mA cm^?2 with an overpotential of 140 mV. The photoanode displays unprecedented long‐term stability with continuous chronoamperometric performance of 50 h at an input potential of 1.5 V with over 30 days. This work provides definitive guidance for designing plasmonic–catalytic nanomaterials for enhanced solar‐to‐chemical energy conversion.     

An impulse radio (IR) radar SoC for through‐the‐wall human‐detection applications

More than 42 000 fires occur nationwide and cause over 2500 casualties every year. There is a lack of specialized equipment, and rescue operations are conducted with a minimal number of apparatuses. Through‐the‐wall radars (TTWRs) can improve the rescue efficiency, particularly under limited visibility due to smoke, walls, and collapsed debris. To overcome detection challenges and maintain a small‐form factor, a TTWR system‐on‐chip (SoC) and its architecture have been proposed. Additive reception based on coherent clocks and reconfigurability can fulfill the TTWR demands. A clock‐based single‐chip infrared radar transceiver with embedded control logic is implemented using a 130‐nm complementary metal oxide semiconductor. Clock signals drive the radar operation. Signal‐to‐noise ratio enhancements are achieved using the repetitive coherent clock schemes. The hand‐held prototype radar that uses the TTWR SoC operates in real time, allowing seamless data capture, processing, and display of the target information. The prototype is tested under various pseudo‐disaster conditions. The test standards and methods, developed along with the system, are also presented.     

Multi-phased VSG CDMA with level clipping for high-rate transmission systems

In this letter, a multi-phased CDMA system employing a variable spreading gain (VSG) approach is proposed for high-rate applications, based on four algorithms for selecting a multi-code set. From simulation results, in addition to simple receiver structure thanks to level clipping, the multi-phased VSG CDMA system provides an high bit rate transmission, while maintaining an acceptable performance degradation.     

An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets

We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high power-added efficiency (PAE), especially at the most probable transmission power of wide-band code-division multiple-access handsets. A PAE of 21% at 16 dBm of output power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 40% at 28 dBm, the required maximum output power, with a single-chip MMIC power amplifier. The power amplifier has been devised with two InGaP-GaAs heterojunction bipolar transistor amplifying chains parallel connected, each chain being optimized for a different P/sub 1dB/ (1-dB compression point) value: one for 16 dBm for the low-power mode, targeting the most probable transmission power, and the other for 28 dBm for the high-power mode. The high-power mode operation shows 40% of PAE and -30 dBc of adjacent channel leakage power ratio (ACLR) at the maximum output power of 28 dBm. The low-power mode operation exhibits -34 dBc of ACLR at 16 dBm with 14 mA of a quiescent current. This amplifier improves power usage efficiency and, consequently, the battery lifetime of the handset by a factor of three.     

Design and fabrication of a significantly shortened multimode interference coupler for polarization splitter application

We report that we have successfully designed and fabricated a significantly shortened multimode interference coupler for application in polarization splitter, using a phenomenon that we termed "quasi-state" (QS) imaging effect. First, we identified and analyzed the QS imaging effect, and, based on the QS analysis, designed and fabricated a novel multimode interference (MMI) device with its split length shortened to 1/5 of a normally designed MMI split length. The fabrication is simple and cost effective and the fabricated device shows outstanding characteristics in extinction ratio, signal homogeneity, excess loss, and tolerance in the length of the splitter.     

Computing the Average Symbol Error Probability of the MPSK System Having Quadrature Error

When quadrature error exists, the shape of the M‐ary phase shift keying (MPSK) signal constellation becomes skewed‐elliptic. Each MPSK symbol takes on a different symbol error probability (SEP) value. The analytical results presented thus far have been derived from studies which examined the SEP problem assuming that the SEP of each MPSK symbol is equally likely; therefore, those results should not be treated as offering a complete solution. In this letter, we present a new and more complete solution to the SEP problem of MPSK by relaxing the above assumption and finding the expressions for the average as well as individual SEP in the presence of quadrature error.     

A fiber depolarizer using polarization beam splitter loop structure for narrow linewidth light source

A new fiber depolarizer employing a polarization beam splitter loop structure is proposed and demonstrated. The depolarizer is devised for broad-band operation and the depolarization of narrow linewidth light source without any help of polarization controllers or Faraday rotator mirrors. A polarizing method is developed that shows good performance without polarization control unit. Therefore, the proposed depolarizer can be cost-effective and easily configured. From experiments, low output degree of polarization less than 10% is obtained for a narrow linewidth light source.     

2.5 Gbit/s multifunctional CMOS transceiver for chip-to-chip optical link

A novel multifunctional transceiver for chip-to-chip optical interconnects operating at 2.5 Gbit/s is proposed, which shares a common block between a receiver and a transmitter. This transceiver provides four conversion functions - electrical-to-optical, optical-to-optical, optical-to-electrical, and electrical-to-electrical - depending on the selection switch on a single chip. The whole chip integrated in 0.18 /spl mu/m CMOS occupies an area measuring 0.82/spl times/0.82 mm/sup 2/.     

Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications

This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency f/sub r0/ of 20.2 GHz with a peak current density of 218 kA/cm/sup 2/, a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3/spl times/10/sup -7/ /spl Omega//spl middot/cm/sup 2/ extracted from RF measurements was achieved by Ni silicidation through a P /spl delta/-doped quantum well by rapid thermal sintering at 430/spl deg/C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.