The influence of solder volume and pad area on Sn–3.8Ag–0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging

This paper examines various aspects of SAC (Sn–3.8Ag–0.7Cu wt.%) solder and UBM interactions which may impact interconnection reliability as it scales down. With different solder joint sizes, the dissolution rate of UBM and IMC growth kinetics will be different. Solder bumps on 250, 80 and 40 μm diameter UBM pads were investigated. The effect of solder volume/pad metallization area (V/A) ratio on IMC growth and Ni dissolution was investigated during reflow soldering and solid state isothermal aging. Higher V/A ratio produced thinner and more fragmented IMC morphology in SAC solder/Ni UBM reflow soldering interfacial reaction. Lower V/A ratio produced better defined IMC layer at the Ni UBM interface. When the ratio of V/A is constant, the IMC morphology and growth trend was found to be similar. After 250 h of isothermal aging, the IMC growth rate of the different bump sizes leveled off. No degradation in shear strength was observed in these solder bump after 500 h of isothermal aging.     

电源适配器能效检测实例分析

利用能效测试系统对不同的电源适配器样品进行检测,对检测的结果进行不确定度评估和分析。结果表明,在检测过程中要注意控制小功耗条件下的测量不确定度。     

Digesting Commercial Clips from TV Streams

A commercial system that performs syntactic and semantic analysis during a TV advertising break could facilitate innovative new applications, such as an intelligent set-top box that enhances the ability of viewers to monitor and manage commercials from TV streams.     

A Hybrid Fast Multipole Pseudo-Spectral Time Domain Method

The major computation cost of pseudo-spectral method comes from the evaluation of differentiation matrix multiplication. In the past, uniform or Chebyshev collocation points are used for sampling. The differentiation matrix multiplication was evaluated by fast Fourier transform (FFT) or fast cosine transform (FCT), in order to reduce the computation complexity from O(N²) to O(N log(N)). However, the intrinsic properties of FFT or FCT may cause the wraparound effect and Gibbs phenomenon. Moreover, FFT or FCT is not applicable to other collocation points such as Legendre and Hermite. In order to improve the accuracy and applicability of the pseudo-spectral method, the fast multipole method (FMM) is exploited to substitute the FFT or FCT. By making use of the similarity of the N-body problem and the collocation problem, a new FMM-based pseudo-spectral time domain method is developed in this paper.     

基于深度森林的多级特征融合SAR目标识别

大多数传统的合成孔径雷达(SAR)目标识别方法仅仅使用了单一的幅度特征,但是由于斑点噪声的存在,仅仅使用幅度特征会限制识别的性能.为了进一步提高SAR目标识别的性能,该文提出了一个基于深度森林的多级特征融合SAR目标识别方法.首先,在特征提取阶段,提取了多级幅度特征和多级密集尺度不变特征变换(Dense-SIFT)特征.幅度特征反映了目标反射强度,Dense-SIFT特征描述了目标的结构特征.而多级特征可以从局部到全局表征目标.随后,为了更完整、充分地反映SAR目标信息,借鉴深度森林的思想对多级幅度特征和多级Dense-SIFT特征进行联合利用.一方面通过堆叠的方式不断将多级幅度特征和多级Dense-SIFT特征进行融合,另一方面通过逐层的特征变换挖掘深层信息.最后利用得到的深层融合特征对目标进行识别任务.该文在MSTAR数据集上进行对比实验,实验结果表明所提算法在性能方面取得了提升,且其性能对超参数设置具有一定的鲁棒性.     

Integrated optical/optoelectronic switch for parallel opticalinterconnects

A monolithic optical/optoelectronic switch for a reconfigurable, parallel optical interconnect is described. By integrating a vertical-cavity surface-emitting laser with a three-terminal GaAs-AlGaAs heterojunction phototransistor, the functions of an optical transceiver and an optical space switch are combined. Switching experiments demonstrate optical/optoelectronic switching and data conversion at 200 Mbit/s     

镍离子与丙酮、丁酮分子的气相反应

用一种结合激光解离和时间飞行质谱仪的方法去研究金属离子与有机分子的气相反应。研究了金属镍离子与丙酮和丁酮分子的气相反应，并讨论了其反应机理。     

F—PORT传真存储转发系统

本文介绍了日本ＫＤＤ公司的Ｆ－ＰＯＲＴ传真存储转发系统的构成、工作方式及其功能。     

Direct-current measurements of oxide and interface traps onoxidized silicon

A direct-current current-voltage (DCIV) measurement technique of interface and oxide traps on oxidized silicon is demonstrated. It uses the gate-controlled parasitic bipolar junction transistor of a metal-oxide-silicon field-effect transistor in a p/n junction isolation well to monitor the change of the oxide and interface trap density. The dc base and collector currents are the monitors, hence, this technique is more sensitive and reliable than the traditional ac methods for determination of fundamental kinetic rates and transistor degradation mechanisms, such as charge pumping