Passively Q-switched solid-state lasers with intracavity opticalparametric oscillators

A rate-equation-based model that describes the behavior of a passively Q-switched solid-state laser containing an intracavity optical parametric oscillator (OPO) is developed. In such a laser there is no output at the fundamental or pump wavelength. When the OPO signal field begins to build up, it acts as a loss for the pump and thus cavity dumps the pump resonator. The model developed explains this behavior and enables one to select OPO parameters which optimize the system's performance. Application of the model to a compact, lightweight, eye-safe, laser range finder operating at 1.54 μm is also described     

激光器绝热啁啾对光纤通信系统传输特性的影响

通过理论分析、实验和计算机模拟得到：进行直接强度调制时，体块型DFB激光器的总微分量子效率（与多量子阱DFB激光器相比）过低，从而导致其绝热啁啾占激光器啁啾的主要部分；用于无再生中继距离较大的强度调制／直接检测（IM／DD）光纤通信系统时，色散效应将导致信号脉冲上升沿压缩，使系统误码率增加。据此建议：在无再生中继距离大于100～120km的常规单模光纤IM／DD系统中，应采用多量子阱激光器。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

大断面交岔点失稳分析及治理

通过工程地质调查、室内围岩物化分析和力学试验 ,深入研究了围岩变形力学机制和破坏机理 .根据新奥法施工原理 ,采取了有针对性的综合治理措施 ,将围岩复杂的变形力学机制转化为单一的变形力学机制 ,使该工程得到了有效治理 .取得的技术经验推广应用于该矿井其它失稳破坏工程 ,均获得了圆满成功     

极尖断面为折线的四极透镜磁性能研究

对传统双曲线极尖的四极透镜进行了磁性能分析。在此基础上，提出了极尖断面为折线的四极透镜结构。磁场的数值分析以及测量结果表明：该结构产生的场梯度均匀，且具有磁场集中、磁场梯度高、便于加工和安装的对称性控制等优点。该结构的四极透镜已用于ＣＹＣＩＡＥ－３０回旋加速器和ＨＩ－１３串列加速器束流输运线之中     

东营深层盐膏层钻井液工艺

胜利油田东营深层盐膏地层发育,盐膏段厚度大,分布范围广,地层岩性十分复杂,钻井中经常发生喷、漏、塌、卡,遇阻、划眼、电测遇阻等井下复杂事故。郝科1井是在该区设计的一口重点深探井,宅钻井深5807.81m,井底最高温度230℃。介绍了深层盐膏层钻井液体系的转化工艺、性能控制、维护处理、防漏、堵漏、固相控制、抗污染和钻具缓蚀等技术,以及MMH聚合物饱和盐水钻井液在郝科1井的成功应用。结果表明,该钻井液在高密度下对盐膏层具有较强的抑制性、悬浮携砂性和抗污染性,抗温220—230℃。MMH聚合物饱和盐水钻井液体系及其配套技术满足了深层盐膏层钻井施工需要。     

化纤项目后评价启示

介绍国内两个“九五”期间建设的大型化纤项目及其后评价结果，分析了项目达不到预期目标的原因。通过后评价的启示，提出了强化投资项目前期工作以及实施过程中跟踪调整的建议。     

β—FeSi2一种很有发展前途的热电材料

简述了βＦｅＳｉ２热电材料的研究工作，分析了β－ＦｅＳｉ２的制备及其热电性能，认为机械合金化是制造β－ＦｅＳｉ２热电材料的发展方向之一。     

导电环接触电阻的改进测量方案

介绍了导电环接触电阻测量方法的现状,提出了在测量过程中防止导线缠绕的两种改进方案,通过分析验证,说明改进后的测量方案能够很好的完成导电环接触电阻的测量.