Characterization of solid-phase welds between Ti---6A1---2Sn---4Zr---2Mo---0.1Si and Ti---13.5A1---21.5Nb titanium aluminide

Dissimilar-alloy welds have been produced between Ti---6Al---2Sn---Z4---2Mo---0.1Si (wt. %) and Ti---13.5Al---21.5 NB (wt.%) titanium aluminde using the three different solid-phase welding processes that create significantly different thermo-mechanical conditions at the weld interface. Exposure to supertransus temperatures, appreciable deformation and rapid cooling of the weld interface region during linear-friction welding promote dynamic recrystallization of beta grains and beta decomposition to fine martensitic products. In contrast, diffusion welding at temperatures below the base metal beta transus temperatures and at relatively low pressures minimizes deformation and microstructural variations in the weld interface region relative to the unaffected base metal. During capacitor-discharge resistance spot welding, extremely rapid heating of the weld interface region to near-solidus temperatures, and subsequent rapid cooling, result in the formation of a metastable, ordered-beta microstructure in the Ti---s13.5Al---21.6Nb and fine alpha-prime martensite in the Ti---6Al---2Sn---4Zr---2Mo-0.1Si.     

Effect of alloying elements on the solidification characteristics and microstructure of Al- Si- Cu- Mg- Fe 380 alloy

The effect of varying the major alloying elements within the limits of specification on the solidification behavior, fluidity, and microstructure of a 380 alloy has been studied at two cooling rates. The thermal analysis technique has been used to study the solidification behavior. The alloying elements investigated ranged from 3.22 to 4.09 pct copper, 1.01 to 1.70 pct iron, 0.06 to 0.50 pct magnesium, 1.69 to 3.00 pct zinc, and 0.16 to 0.46 pct manganese. The results show that the solidification behavior of the 380 alloys is complicated, and the cooling curve at 0.4 ‡C/s indicates six reactions taking place during the process of solidification. Cooling curves obtained for each of the alloying element additions, their analysis, and the resultant microstructures are discussed.     

L-arginine reduces kidney collagen accumulation and N-epsilon-(carboxymethyl)lysine in the aging NMRI-mouse

BACKGROUND: The aging process leads to glomerular basement membrane (GBM) thickening due to increased collagen accumulation. This mechanism can be explained by the nonenzymatic glycosylation hypothesis of collagen aging. We have published the positive effect of L-arginine on glucose-mediated cross-linking, and if the nonenzymatic glycosylation hypothesis of aging holds, the pharmacological effect of L-arginine on glucose-mediated cross-links in the aging Hannover NMRI mouse can be expected. METHODS: Animals were given L-arginine 50 mg/kg body weight/day orally and compared to a control group without treatment. RESULTS: Electron microscopical measurement of the GBM thickness showed significant differences between controls (4920 +/- 1680 A) and the experimental group (2345 +/- 815 A). Determination of the total kidney collagen content based upon 4-trans hydroxyproline revealed 13.9 +/- 3.9 mg/100 mg kidney weight (kw) in the untreated group versus 7.9 +/- 4.2 mg/100 mg kw in the treated group. For solubility studies based upon hydroxyproline determination, collagen was eluted by pepsin digestion. This revealed 18.7 +/- 3.9 mg/100 mg kw in the controls versus 7.8 +/- 4.8 mg/100 mg kw in the treated group. HPLC analysis of N-epsilon-(carboxymethyl)lysine (CML) showed in the treated group (1.847 +/- 0.247 nM/microM hydroxyproline) significantly lower concentrations than in the untreated group (3.399 +/- 0.349 nM/microM hydroxyproline). On sodium dodecyl sulfate (SDS) polyacrylamidegel electrophoresis, the eluates of the treated animals showed less high molecular weight material than their untreated mates. CONCLUSIONS: We cannot discriminate between the probable mechanisms of cross-linking but we clearly can state that L-arginine reduces cross-linking and collagen accumulation in aging collagen type IV accompanied and strongly associated with decreased CML content.     

Substrate-connected high voltage pumping circuits for low supplyvoltages

Novel high voltage pumping circuits for low supply voltages are proposed. Utilising a small pumping circuit and the new substrate-connected techniques can enhance charge transfer efficiency and eliminate the body effect at low supply voltages. Furthermore, a diode-connected transistor technique can improve the reverse charge sharing phenomenon when the output has a load current. With this technique high boosted voltages can be obtained at low supply voltages     

Optical characterization of low-temperature-grown GaAs forultrafast all-optical switching devices

Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.     

Optical dot gain on newsprint determined with the Lund nuclear microprobe

A technique for measuring optical dot gain, i.e. the relative difference between the actual screen dot and the optically perceived one, is presented. By combining measurements from the non-optical nuclear microprobe with data from image analyzing technique the optical dot gain can be determined. The procedure to reach pixel by pixel correlation on a micrometer scale is discussed. In the newsprint sample studied in this investigation a typical optical dot gain between 15 and 20% was deduced. The variation in the optical dot gain was correlated with other characteristic parameters of the print and newsprint and especially a positive correlation to the mass density of the newsprint was observed.