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921.
The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development.  相似文献   
922.
In a previous study a solvent mixture of heptane containing 40 mass % heptanol was selected as an alternative in the industrial extraction of caprolactam to replace benzene, toluene, or chlorinated hydrocarbons. This work reports the equilibrium distribution ratio of caprolactam and four model impurities of organic nature, namely, cyclohexanone, aniline, n‐methylcaprolactam, and cyclohexane‐carboxamide, comparing the mixed solvents with toluene as a reference. The resulting phase equilibria were interpreted using the equilibrium stage model. Based on these calculations it was found that, compared to toluene, the co‐extracted fraction of cyclohexanone and aniline was higher, that of n‐methylcaprolactam was comparable, and that of cyclohexane‐carboxamide was lower using the mixed solvent. Overall, the mixed solvent reduced the fraction of co‐extracted impurities by almost 10 %.  相似文献   
923.
The texture of potato tissue after a freeze–thaw process using different freezing rates and different pretreatments was analysed, in order to select the best strategy for optimum preservation of the textural characteristics of pre‐frozen potato. Ten blanching conditions were tested and a two‐step blanching process with calcium chloride (0.07 g mL?1) proved the most effective in protecting the tissue after a freeze–thaw process (maximum load force around 10–55% of the raw tissue, depending on potato batch, for air‐blast freezing and 20–60% for immersion freezing). Vacuum impregnation at 100 and 400 mbar, even when followed by different pre‐drying treatments to remove excess water, was very detrimental to resistance to a freeze–thaw process (maximum load force below 10% of the raw tissue for air‐blast freezing and below 20% for immersion freezing). Microstructure analysis confirmed better tissue integrity retention with ethyleneglycol immersion freezing instead of air‐freezing. Differences were found between batches with a 6‐month difference in storage time, indicating that the fresher batch was more suitable for freezing.  相似文献   
924.
Fatigue behaviour and endurance limit of graphite and of aluminium‐infiltrated graphite Fatigue properties of polycrystalline, isotropic graphite FU2590 and of FU2590 infiltrated with AlSi7Mg (FU2590/AlSi7Mg) were investigated in reversed bending tests at 25 Hz at numbers of cycles below 107 and in tension‐compression tests at 20 kHz below 109 cycles. The open porosity of Graphite (10‐11 Vol.‐%) was infiltrated with the aluminium alloy using the squeeze casting infiltration method, which led to an increase of the bending strength by 50 %, increase of tensile strength by 30 % and increase of stiffness by 15 %. Fully reversed tension‐compression loading of FU2590 delivers a mean endurance limit at 109 cycles at the normalized maximum stresses (i.e. maximum tension stress of a cycle divided by the static strength) of 0,65±0,03. Mean numbers of cycles to failure of 104 were found in fully reversed bending tests at the normalized maximum stress of 0,78. The infiltrated material shows approximately 30 % higher cyclic strength in reversed bending tests, and the mean endurance limit under tension compression loading increases by 15 %. The increased endurance limit of the infiltrated material is caused by the increased stiffness. The increased toughness of graphite due to the infiltration with aluminium is of additional beneficial influence at the higher cyclic stresses investigated in reversed bending tests and in static tests.  相似文献   
925.
Perceptual analysis of handwritten signatures for biometric authentication   总被引:1,自引:0,他引:1  
The Internet has stimulated increased activity to address key problems relating to the implementation of reliable and robust biometric identity checking. Although not always the biometric modality most readily adopted in such an environment, the handwritten signature continues to offer many advantages over some other more commonly considered biometrics. The authors address some key issues relating to the nature of the handwritten signature and, especially, the strategies used by humans in analysing signature data. Through experimental studies and an analytical investigation, the paper identifies characteristics of the signature which influence its resilience to fraudulent penetration, pointing to some important principles on which to build procedures for both automated and non-automated identity authentication.  相似文献   
926.
In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.  相似文献   
927.
An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.  相似文献   
928.
929.
In this article we present five case studies of advanced networking functions that detail how a network processor (NP) can provide high performance and also the necessary flexibility compared with ASIC. We first review the basic NP system architectures, and describe the IBM PowerNP architecture from the data plane as well as the control plane point of view. We introduce models for the programmer's views of NP that facilitate a global understanding of NP software programming. Then, for each case study, we present results from prototypes as well as general considerations that apply to a wider range of system architectures. Specifically, we investigate the suitability of NP for QoS (active queue management and traffic engineering), header processing (GPRS tunneling protocol), intelligent forwarding (load balancing without flow disruption), payload processing (code interpretation and just-in-time compilation in active networks), and protocol stack termination (SCTP). Finally, we summarize the key features as revealed by each case study, and conclude with remarks on the future of NP.  相似文献   
930.
Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.  相似文献   
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