具有阻力特性材料的σ_f－σ关系及一种新的阻力曲线测定方法

通过对相变增韧陶瓷及一种可切削玻璃－陶瓷动态疲劳（恒应力速率）试验中高应力速率区断裂应力下降现象的理论分析，发现这种现象与材料的阻力特性（Ｒ－ｃｕｒｖｅ）密切相关。确立的σ_ｆ－σ理论关系能够很好地描述整个应力速率区间内的动态疲劳试验结果。高应力速率区σ_ｆ－σ在双对数坐标下为负斜率直线，直线斜率为（ｍ为阻力曲线ＫＲ＝ｋ（△ａ）~ｍ的指数），断裂主要由材料阻力行为控制；低应力速率区，σ_ｆ－σ在双对数坐标下为正斜率直线，直线斜率为　（ｎ为应力腐蚀指数），断裂主要由材料应力腐蚀行为控制。建立了测定材料阻力特性的一种新方法，分别用这种方法及压痕／弯曲方法对一种可切削玻璃－陶瓷的阻力特性进行了实验测定，两种方法所得结果有很好的一致性。     

Chronic pain in elderly people

Using the fear-potentiated startle paradigm in rats, 4 experiments examined whether the inhibitory effect of a feature is evident after its offset following serial feature-negative discrimination training (A+ and X-->A-). When startle probes were presented shortly after the offset of X on X-->A test trials, the inhibitory properties of X were observed immediately after its offset. Furthermore, trace reinforcement of X (X-->+), but not delay reinforcement (X+), disrupted the ability of X to inhibit fear-potentiated startle on X-->A trials. Trace conditioning to X was also retarded after A+ and X-->A- training. These results suggest that the inhibitory properties of the serially trained feature are present after its offset and raise the possibility that either temporal information regarding nonreinforcement or poststimulus attributes of X acquire inhibitory properties.     

Asymmetric dilation of multiwavelength cross-connect switches forlow-crosstalk WDM optical networks

We predict that, for wavelength division multiplexing optical-network applications, an asymmetrically dilated configuration of a 2×2 cross-connect is significantly better in terms of overall crosstalk when the levels of the bar-port crosstalk and the cross-port crosstalk are significantly different from each other, as is the case with optical-frequency filters which utilize grating-assisted coupling. As a verification, we present a simulation study with 2×2 polarization-diversified acousto-optic tunable filters. We present a recursive method to extend the principle of asymmetric dilation to larger-size cross-connect switches, and make a recommendation for an asymmetrically dilated 4×4 cross-connect configuration     

Application of neural networks and machine learning in networkdesign

Communication network design is becoming increasingly complex, involving making networks more usable, affordable, and reliable. To help with this, we have proposed an expert network designer (END) for configuring, modeling, simulating, and evaluating large structured computer networks, employing artificial intelligence, knowledge representation, and network simulation tools. We present a neural network/knowledge acquisition machine-learning approach to improve the END's efficiency in solving the network design problem and to extend its scope to acquire new networking technologies, learn new network design techniques, and update the specifications of existing technologies     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Digitally tunable optical filters using arrayed-waveguide grating(AWG) multiplexers and optical switches

Two novel configurations for digitally tunable optical filters based on arrayed-waveguide grating (AWG) multiplexers are described in detail with emphasis on the connection of the AWG multiplexer and optical switches. Performance comparisons show that conventional configurations are disadvantaged by the switch size required and loss imbalance among the optical frequency-division-multiplexed (FDM) channels; the proposed configurations require only O(√(N)) switch elements to select one of N FDM channels, and the loss imbalance is lower by up to 75% in decibel     

A new lateral MOS-gated thyristor with controlling base-current

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P⁺ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor     

A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices