A process algebraic approach to the specification and analysis ofresource-bound real-time systems

Recently, significant progress has been made in the development of timed process algebras for the specification and analysis of real-time systems. This paper describes a timed process algebra called ACSR, which supports synchronous timed actions and asynchronous instantaneous events. Timed actions are used to represent the usage of resources and to model the passage of time. Events are used to capture synchronization between processes. To be able to specify real systems accurately, ACSR supports a notion of priority that can be used to arbitrate among timed actions competing for the use of resources and among events that are ready for synchronization. The paper also includes a brief overview of other timed process algebras and discusses similarities and differences between them and ACSR     

Smart cars, smart highways

Advanced electronics is being used to unclog the transportation network and allow private vehicles, trucks, buses and trains to move further faster. already a range of technologies and ideas have been explored, deployed, and tested as part of the Intelligent Vehicle Highway System programs in the United States and Japan, and in the Road Transport Informatics program in Europe. The authors describe how these latest electronics for automobiles and roadways herald far fewer traffic jams, greater safety, and perhaps even a decline in pollution     

Degrees and diversity at work

A study of of over 3000 engineers and scientists employed in the United States explored the interplay of levels of education with gender and native versus immigrant status. The results suggest that some of these R&D professionals may be underutilised and perhaps less effective than they could be     

A theoretical and numerical analysis of the measured equation ofinvariance

The measured equation of invariance (MEI) has been previously introduced to efficiently and accurately handle the boundary truncation for finite methods. The present authors give a theoretical analysis that provides several important insights into the capabilities of the MEI. From the numerical study, they can explain why the MEI works better than one would expect. Both the theoretical and the numerical analyses demonstrate that the accuracy of the solution is dependent on the electrical size of the geometry as well as the distance between the mesh boundary and the geometry. From the analysis, the authors propose a new set of metrons that is less sensitive to the excitation than the previously proposed sinusoidal metrons     

Scattering by spherically stratified microwave lens antennas

A comprehensive treatment of scattering by sources in the region of a spherically stratified object composed of discrete shells is presented and compared with measured results. The work encompasses the developments necessary for a thorough understanding of the focusing mechanism of a spherical lens. The method used is a modal technique that employs separation of variables in order to determine an eigenfunction representation of the incident and scattered fields. This formulation provides the Green's function required for the calculation of the scattering from a multiple layered sphere excited by an infinitesimal current element. The algorithm allows both near- and far-field predictions. The scattering by more complicated source field distributions is modeled by applying superposition with the appropriate coordinate transformations. From a practical standpoint, the present analysis allows the limitations of spherical lenses to be determined while providing the information required to optimize the lens design. A system was built based on the new design data, and its measured radiation characteristics are compared to the theoretical predictions. Excellent agreement is observed in most cases     

A partitioning technique for the finite element solution ofelectromagnetic scattering from electrically large dielectric cylinders

A finite element partitioning scheme has been developed to reduce the computational costs of modeling electrically large geometries. In the partitioning scheme, the cylinder is divided into many sections. The finite element method is applied to each section independent of the other sections, and then the solutions in each section are coupled through the use of the tangential field continuity conditions between adjacent sections. Since the coupling matrix is significantly smaller than the original finite element matrix, it is expected that both the CPU time and memory costs can be significantly reduced. The partitioning scheme is coupled to the bymoment method to account for the boundary truncation. Numerical results are presented to demonstrate the efficiency and accuracy of the method     

Fundamental quantum 1/f noise in semiconductor devices

The quantum 1/f noise theory has been developed in the last two decades and has been applied to 1/f noise suppression in various electronic devices. This theory derives fundamental quantum fluctuations present in the elementary processes of physics at the level of the quantum mechanical cross sections and process rates. This paper demonstrates the basic simplicity of the theory with an elementary physical derivation followed by a short derivation of the conventional quantum 1/f effect in second quantization, for an arbitrary number of particles N defining the scattered current in the final state. A new derivation of the coherent quantum 1/f effect is also included. No adjustable parameters are present in the quantum 1/f theory. Practical applications to semiconductor materials, p-n junctions, SQUID's and quartz resonators are presented. Optimal design principles based on the quantum 1/f theory are described and explained     

Coupled electrothermal modeling of microheaters using SPICE

In this paper,,we report a novel simulation approach that computes both the transient and steady state electrothermal behavior in integrated circuit (IC) compatible thermally isolated microheaters. The resulting distribution of heat, current density and temperature, as well as the electrical terminal behavior have been obtained for realistic device structures. The results are based on a two-dimensional solution of the coupled system of partial differential equations that govern both electrical and heat transport in the device. Unlike standard numerical approaches for coupled systems, our technique is based on the behavioural models, available in most commercial circuit simulators (e.g., HSPICE), that allow synthesis of complex, nonlinear, and coupled circuit elements. The simulation results are in excellent agreement with measurement data of steady state and transient terminal characteristics, obtained under conditions of vacuum. We note that this modeling approach allows concurrent simulation (and subsequent optimization) of the performance of both the control electronics as well as the thermal element(s), within the same IC design environment     

Overgrown silicon PBT's: calculations and measurements

The device parameters of overgrown silicon permeable base transistors (PBT's) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT's. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity-current-gain frequencies f_T over 50 GHZ. In addition, PBT's with buried monocrystalline CoSi₂-gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n-type Si(100). Measurements revealed a transconductance of 70 mS/mm and a f _T value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement     

On the hot-carrier-induced post-stress interface trap generation inn-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior