Effects of free convection and mass transfer on the flow past an impulsively moving infinite vertical circular cylinder

The effects of free convection and mass transfer are taken into account for the Stokes' problem of the flow near an impulsively moving infinite vertical circular cylinder. Expressions of the velocity, temperature, concentration and skin friction of the fluid in closed form are obtained by the Laplace transform technique. The results based on various values of the parameters Gr (Grashof number), Gm (modified Grashof number), Sc (Schmidt number) and Pr (Prandtl number) are given in graphical form. It will be seen that there is a rise in the velocity due to the presence of a foreign mass. But higher Sc yields the lower velocity and skin friction. As the radius of the circular cylinder approaches to infinite, the results presented in this paper agree with those of V.M. Soundalgekar's and C.K. Chen's etc. for the flow past an impulsively moving infinite vertical plate.     

China Likely to Resume Oil Futures Soon

China is likely to resume operation of its oil futures this year, according to reports from the media about a futures conference organized by the Shanghai Futures Exchange (SHFE) in late May. "As China has become an important oil producer and consumer,the demand for our own oil futures market emerges,which will help China oil-related enterprises hedge risks," said Li Ruisheng, vice president of PetroChina's refining and marketing company.     

Direct analysis of transient stability: Experience with the Taipower system

A direct method for transient stability analysis of a multimachine power system is presented. Emphasis is placed on the detailed development and evaluation of the proposed method in transient stability assessment. An energy-type Lyapunov function, taking into account the effect of transfer conductance, is introduced first. The potential energy boundary surface method is then adopted to determine the critical energy value quickly. The main computational burden in the direct method lies in the reduction of the admittance matrices. In this paper, an efficient reduction technique incorporating the sparsity technique and compensation theory is developed. Finally, the proposed method was tested on the Taipower system, which is the only power system in Taiwan. The results obtained confirm the validity and accuracy of the proposed method, and hence demonstrate the superiority and potential of the direct method in real power system applications.     

Classification and prediction of the critical heat flux using fuzzy theory and artificial neural networks

A new method to predict the critical heat flux (CHF) is proposed, based on the fuzzy clustering and artificial neural network. The fuzzy clustering classifies the experimental CHF data into a few data clusters (data groups) according to the data characteristics. After classification of the experimental data, the characteristics of the resulting clusters are discussed with emphasis on the distribution of the experimental conditions and physical mechanism. The CHF data in each group are trained in an artificial neural network to predict the CHF. The artificial neural network adjusts the weight so as to minimize the prediction error within the corresponding cluster. Application of the proposed method to the KAIST CHF data bank shows good prediction capability of the CHF, better than other existing methods.     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.