222Rn在大气输运研究中的示踪应用

本文简要回顾了222Rn及其子体示踪应用的主要方面,介绍了国内外对利用222Rn及其子体在预报地震和大气物质输运研究这两方面的工作.对这些示踪应用而言,要进行准确的定量分析和数值模拟,必须对222Rn及其子体在大气中的输运规律有细致的了解,这一点可以通过研究其动力学特征,建立输运模型来实现.本文中列举了部分对222Rn及其子体输运模式的研究,对比上层大气中的简单输运模型,一个比较全面的222Rn输运模型还需要考虑地表层结大气中的复杂的动力学因素,并将其作为222Rn在上层大气输运模型中的下垫面边界条件.     

A New Construction of Signature Waveforms for Multi-rate Multi-cell QS-CDMA Systems

In this paper, we propose a new construction of signature waveform sets based on Generalized Loosely Synchronization (GLS) sets and different chip waveforms. The new signature sets are applied into the multi-rate multi-cell quasi-synchronous CDMA (QS-CDMA) system where each cell is assigned with a GLS set; different users in the same cell are assigned with different GLS sequences in the same GLS set; user’s different streams are assigned with the same GLS sequence but different chip waveforms. According to the properties of GLS sets, the inter-cell interference (ICI) and the multi-user interference (MUI) in the same cell can be reduced significantly. The interferences among different streams of the same user are handled by an optimal (or suboptimal) multi-stream detector(s), notice that the multi-stream detector mentioned here is also named as multi-user detector in other references. We compare the performance of the multi-rate multi-cell QS-CDMA system employing the proposed sets with that of multi-rate system employing well-known concatenated orthogonal/PN sets and that of single-rate system employing GLS sets. The results show that the multi-rate system employing the proposed sets can achieve significant interference reduction. Meanwhile the performance of multi-rate system is similar to that of single-rate system due to the inclusion of multi-user detection.

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes

The impulse response in frontside-illuminated mid-wave infrared HgCdTe electron avalanche photodiodes (APDs) has been measured with localized photoexcitation at varying positions in the depletion layer. Gain measurements have shown an exponential gain, with a maximum value of M = 5000 for the diffusion current at a reverse bias of V _b = 12 V. When the light was injected in the depletion layer, the gain was reduced as the injection approached the N+ edge of the junction. The impulse response was limited by the diode series resistance–capacitance product, RC, due to the large capacitance of the diode metallization. Hence, the fall time is given by the RC constant, estimated as RC = 270 ps, and the rise time is due to the charging of the diode capacitance via the transit and multiplication of carriers in the depletion layer. The latter varies between t _10–90 = 20 ps (at intermediate gains M < 500) and t _10–90 = 70 ps (at M = 3500). The corresponding RC-limited bandwidth is BW = 600 MHz, which yields a new absolute record in gain–bandwidth product of GBW = 2.1 THz. The increase in rise time at high gains indicates the existence of a limit in the transit-time-limited gain–bandwidth product, GBW = 19 THz. The impulse response was modeled using a one-dimensional deterministic model, which allowed a quantitative analysis of the data in terms of the average velocity of electrons and holes. The fitting of the data yielded a saturation of the electron and hole velocity of v _e = 2.3 × 10⁷ cm/s and v _h = 1.0 × 10⁷ cm/s at electric fields E > 1.5 kV/cm. The increase in rise time at high bias is consistent with the results of Monte Carlo simulations and can be partly explained by a reduction of the electron saturation velocity due to frequent impact ionization. Finally, the model was used to predict the bandwidth in diodes with shorter RC = 5 ps, giving BW = 16 GHz and BW = 21 GHz for x _j = 4 μm and x _j = 2 μm, respectively, for a gain of M = 100.     

Thermal Conductivity of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Affected by Grain Size and Pores

A fine measurement system for measuring thermal conductivity was constructed. An accuracy of 1% was determined for the reference quartz with a value of 1.411 W/m K. Bi_0.5Sb_1.5Te₃ samples were prepared by mechanical alloying followed by hot-pressing. Grain sizes were varied in the range from 1 μm to 10 μm by controlling the sintering temperature in the temperature range from 623 K to 773 K. The thermal conductivity was 0.89 W/m K for the sample sintered at 623 K, while a grain size of 1.75 μm was measured by optical microscopy and scanning electron microscopy. The thermal conductivity increased on the sample sintered at 673 K because of grain growth and decreased on those sintered at the temperatures from 673 K to 773 K because the increase of pore size caused to decrease thermal conductivity. The increase of thermal conductivity for the samples sintered at temperatures above 773 K was affected by the increase of carrier concentration.     

The theory of multiple peeling

In this paper we derive the theory of multiple peeling, extending the pioneering energy-based single peeling theory of Kendall, including large deformations and pre-stretching. We can thus treat a complex system of films, adhering over a substrate and having a common hinge where the pulling force is applied. Two case studies are investigated: the asymmetric V-shape double peeling and the symmetric cone-shape configuration with N peeling tapes, both requiring the solution of six nonlinear coupled equations (instead of the one needed in the simpler single peeling problem). Remarkable implications emerge: (1) for moderate deformations, the critical strain of a tape is identical to that of the single peeling; (2) an optimal peeling angle, at which adhesion is maximal, is discovered; (3) an additional optimization, even for hierarchical structures, is introduced by imposing the delamination force equal to the intrinsic fracture of the tape. Also, the length of the peeling process zone is calculated, suggesting different optimal values for flaw-tolerant peeling at different angles. Applications to gecko adhesion, for which the flaw-tolerant peeling is demonstrated, and spider silk anchors, that we are going to discuss in details in subsequent papers, are envisioned (including a new pre-stretching mechanism for adhesion control) and suggested by the evidence of a smart mechanism capable of maximizing adhesion simply by increasing the applied tension.     

Mesoporous Co3O4 for low temperature CO oxidation: effect of calcination temperatures on their catalytic performance

Mesoporous Co3O4 particles are prepared by using mesoporous silica KIT-6 (with double gyroid Ia-3d symmetry) as a hard-template and Co(No3)2 x 6H2O as an inorganic precursor. In the former section, we investigate the effect of the calcination temperatures at which the Co salts are converted into Co3O4 inside the mesopores on the textural parameters of the products. The results of N2 adsorption-desorption analysis indicates that the calcination temperatures do not obviously affect the textural parameters such as the surface areas and pore volumes. However, when the calcination temperature reaches 800 degrees C, the mesostructural ordering is dramatically decreased, resulting in the reduction of the surface areas and pore volumes. After 800 degrees C calcination, the formation of large Co3O4 grains is partially confirmed on the particle surface by SEM observation. The grain size is much larger than the mesopore size of the original KIT-6, meaning the crystal growth is continuously occurred by breaking the rigid silica frameworks. In the latter section, we discuss the effect of the calcination temperatures and textural parameters on the catalytic activity for CO oxidation by both steady state and kinetic measurements. All mesoporous Co3O4 particles show a high catalytic activity, for example, -72 degrees C for sample calcined at 450 degrees C. Only 10 degrees C difference in T50 (the temperature of 50% conversion of CO) is found between the samples with the highest and lowest catalytic activity. The values of activation energy (Ea) and pre-exponential factor (A) per unit area are almost the same between two samples calcined at 450 degrees C and 800 degrees C. It is demonstrated that calcination process can not alter the essential catalytic property of mesoporous Co3O4 particles.     

Fabrication of transparent polymer-matrix nanocomposites with enhanced mechanical properties from chemically modified ZrO<Subscript>2</Subscript> nanoparticles

Optically transparent nanocomposites with enhanced mechanical properties were fabricated using stable dispersions of sub 10 nm ZrO₂ nanoparticles. The ZrO₂ dispersions were mixed with a commercially available bisphenol-A-based epoxy resin (RIMR 135i) and cured with a mixture of two amine-based curing agents (RIMH 134 and RIMH 137) after complete solvent removal. The colloidal dispersions of ZrO₂ nanoparticles, synthesized through a non-aqueous approach, were obtained through a chemical modification of the ZrO₂ nanoparticle surface, employing different organic ligands through simple mixing at room temperature. Successful binding of the ligands to the surface was studied utilizing ATR–FT-IR and thermogravimetric analysis. The homogeneous distribution of the nanoparticles within the matrix was proven by SAXS and the observed high optical transmittance for ZrO₂ contents of up to 8 wt%. Nanocomposites with a ZrO₂ content of only 2 wt% showed a significant enhancement of the mechanical properties, e.g., an increase of the tensile strength and Young’s modulus by up to 11.9 and 12.5%, respectively. Also the effect of different surface bound ligands on the mechanical properties is discussed.     

Effects on Undercooling and Interfacial Reactions with Cu Substrates of Adding Bi and In to Sn-3Ag Solder

This study investigated the effects of adding Bi and In to Sn-3Ag Pb-free solder on undercooling, interfacial reactions with Cu substrates, and the growth kinetics of intermetallic compounds (IMCs). The amount of Sn dominates the undercooling, regardless of the amount or species of further additives. The interfacial IMC that formed in Sn-Ag-Bi-In and Sn-In-Bi solders is Cu₆Sn₅, while that in Sn-Ag-In solders is Cu₆(Sn,In)₅, since Bi enhances the solubility of In in Sn matrices. The activation energy for the growth of IMCs in Sn-Ag-Bi-In is nearly double that in Sn-Ag-In solders, because Bi in the solder promotes Cu dissolution. The bright particles that form inside the Sn-Ag-In bulk solders are the ζ-phase.     

Symbol Error Rate Analysis and Power Allocation for Adaptive Relay Selection Schemes

In this paper, we analyse the symbol error rate (SER) performance of adaptive relay selection schemes (ARS) in a general dual-hop multiple-relay network. Specifically, we provide a closed-form SER expression for ARS which is tight over the whole signal-to-noise ratio (SNR) region. In addition, the derived SER can be readily extended to conventional relay selection schemes, i.e. amplify-and-forward relay selection (AF-RS), perfect decode-and-forward relay selection (PDF-RS), adaptive decode-and-forward relay selection (ADF-RS), and cooperative-maximum-ratio-combining decode-and-forward relay selection (CDF-RS). Transmit power allocation based on the simplified SER is presented to improve the system performance. The analytical results are verified by computer simulations.