结合温度补偿的超声波测距系统设计

本设计实现了一种以AT89C2051单片机为核心的超声波测距系统,它具有低成本,高精度,微型化数字显示的特点.为提高测量精度,在测量时使用了DS18B20温度传感器对系统进行有效的温度补偿.经实验证明,本系统电路设计合理、工作稳定、检测速度快、测量简单、易于做到实时控制.     

Wideband Frequency Synthesizer at X/Ku Band by Mixing and Phase Locking of Half Frequency Output of VCO

A wideband low phase noise frequency synthesizer at X/Ku band has been developed by using phase locking and mixing technique at half frequency of voltage controlled oscillator (VCO). The half frequency output signal of the VCO is down converted by a balanced mixer at C band to obtain an intermediate frequency (IF) signal used for phase locking of the VCO. An ultra low phase noise local signal source at 6 GHz is developed with a frequency multiplying chain driven by a 100 MHz oven controlled crystal oscillator (OCXO). Coupling circuit outside the VCO chip to the mixer does not need to be specially designed, which is beneficial to simplify the circuit scheme and improve the phase noise performance. Measurement results show that the phase noise of the output signal at 10.6 GHz to 11.8 GHz and 12.3 GHz to 13.0 GHz is better than −102 dBc/Hz at 10 kHz away form the carrier center. This frequency synthesizer can be used as local signal source or driving source for the development of wideband millimeter-wave frequency synthesizer systems.     

A fluorescent porous silicon-based biosensor for small molecule detection

Fluorescent porous silicon was prepared as a stable biosensor chip substrate. The aminopropyltriethoxysilane (APTES) molecules are attached in the pores of the porous silicon with a crosslink method, and when the molecules are added into the chip, the fluorescence intensity is reduced according to the concentration of the APTES. Controlled experiments are also presented with the small molecule that cannot be covalently coupled, and the results show that this kind of sensor chip has better specificity. Compared with other conventional methods, this method is simple, quick and label-free.     

基于Web服务的开放式地理信息系统的研究

在介绍Web服务与OpenGIS规范的基础上,提出了基于Web服务的开放式地理信息系统解决方案,设计并实现了资源目录服务、地理要素服务和地图服务,以及通过数据集成来定制地理要素和地图图层的手段,为地理信息数据的发布与共享提供了符合OpenGIS规范的软件工具。     

IO单元自动排布算法IOAP

提出了一种应用于芯片物理设计过程中IO单元自动排布的新算法。IO单元排布是芯片物理设计过程中长期依赖经验的环节。IO单元排布的优化对布线,电源网格和设计收敛性的优化有很大贡献。文章重点研究边缘IO单元排布,提出了IO单元自动排布算法(IOAP)。此算法及其相关软件直接应用于视频解码芯片和无线传感器网络处理器芯片(已流片成功)的物理设计流程中。结果表明,IOAP有效改善了芯片的电源网格,时序和布线结果,减少了布线努力,提高了设计收敛性。     

SiGe MOS器件SiO_2栅介质低温制备技术研究

为了获得电学性能良好的 Si Ge PMOS Si O2 栅介质薄膜 ,采用等离子体增强化学汽相淀积 (PECVD)工艺 ,对低温 30 0°C下薄膜制备技术进行了研究。实验表明 ,采用适当高温、短时间对PECVD薄膜退火有助于降低薄膜中正电荷密度和界面态密度。该技术用于 Si Ge PMOS研制 ,在30 0 K常温和 77K低温下 ,其跨导分别达到 45m S/mm和 92 .5m S/mm(W/L=2 0 μm/2 μm)     

Modeling and Simulation of New Encoding Schemes for High‐Speed UHF RFID Communication

In this paper, we present novel high‐speed transmission schemes for high‐speed ultra‐high frequency (UHF) radio‐frequency identification communication. For high‐speed communication, tags communicate with a reader using a high‐speed Miller (HS‐Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse‐interval encoding (E‐PIE). E‐PIE can provide up to a two‐fold faster data rate than conventional pulse‐interval encoding. Using HS‐Miller encoding and orthogonal multiplexing techniques, tags can achieve a two‐ to three‐fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high‐speed backscatter based on an HS‐Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.     

基于DES密码电路的差分功耗分析仿真研究

差分功耗分析技术是目前应用广泛、技术发展较成熟的非侵入攻击技术,设计了一个功耗分析仿真平台,该平台具有自动化程度高、精度高和仿真速度快的特点.此外,还基于该平台实现了对DES密码电路的差分功耗分析,对数字电视机项盒安全性的提高具有参考意义.     

基于散射函数的短波信道参数估计

理论分析了短波信道散射函数的计算,给出了实际短波信道探测中散射函数的测量方法,以及利用散射函数估计短波信道的衰落带宽、衰落相干时间、多径散布、相关带宽和信号的多普勒频移、传播时延等参数的方法.从实验数据中得到了短波信道的散射函数,利用散射函数估计了上述参数,给出了估计结果.     

Ga_(1-x)In_xAs_ySb_(1-y)/GaSb LPE生长及其性质研究

报导了在n型(100)GaSb衬底上,温度为520—530℃时,用液相外延的方法实现了组分在0≤x≤0.19,0≤y≤0.14范围内的Ga_(1-x)In_xAs_ySb_(1-y)四元合金半导体的生长。X射线双晶衍射,电子探针及光学显微镜的观察和分析测试表明:所得外延层的表面形貌和界面特性优良,组分分布和层厚均匀,晶格匹配及单晶性能良好。对外延层表面的氧化情况使用Auger能谱仪进行测试分析。另外,对生长中存在的一些问题进行了讨论。