Instruction-Vulnerability-Factor-Based Reliability Analysis Model for Program Memory

Bit faults induced by single-event upsets in instruction may not cause a system to experience an error. The instruction vulnerability factor (IVF) is first defined to quantify the effect of non-effective upsets on program reliability in this paper; and the mean time to failure (MTTF) model of program memory is then derived based on IVF. Further analysis of MTTF model concludes that the MTTF of program memory using error correcting code (ECC) and scrubbing is not always better than unhardened program memory. The constraints that should be met upon utilizing ECC and scrubbing in program memory are presented for the first time, to the best of authors’ knowledge. Additionally, the proposed models and conclusions are validated by Monte Carlo simulations in MATLAB. These results show that the proposed models have a good accuracy and their margin of error is less than 3 % compared with MATLAB simulation results. It should be highlighted that our conclusions may be used to contribute to selecting the optimal fault-tolerant technique to harden the program memory.     

Millileter-Wave Power-Combining Amplifier Using A Broadband Waveguide Combiner

A Millimeter-wave power-combining amplifier based on the multi-way rectangular-waveguide power-dividing/combining circuit has been presented and investigated. The equivalent-circuit approach has been used to analyze the passive power-dividing/combining circuits. An eight-device amplifier is designed and measured to validate the power-dividing/combining mechanism using this technique. Both the measured 10-dB return loss bandwidth and the 2-dB insertion loss bandwidth of the passive system are more than 10?GHz. The measured maximum small-signal gain of the millimeter-wave eight-device power amplifier is 22.5?dB at 26.8?GHz with a 3-dB bandwidth of more than 6?GHz, while the input and output return loss of the proposed eight-device power amplifier is around ?10?dB from 26?GHz to 36?GHz. The measured maximum output power at 1-dB compression from the power amplifier is 28 dBm at 29.5?GHz.     

System Verilog语言在数字系统设计中的应用

使用Verilog进行数字系统设计时会出现对电路结构描述不够简洁、精确的问题.对IEEE的新标准Sys- temVerilog硬件描述语言进行了研究,通过比较两种语言的关键语法结构,分析了上述问题产生的原因和采用Sys- temVerilog语言的解决方法.最后,以HDB3编码电路设计为例,给出采用SystemVerilog语言进行设计、仿真和综合的结果.     

超宽带SiC MESFET器件的研制

采用中国电子科技集团公司第十三研究所自主外延材料及标准工艺平台制作了SiC MESFET芯片,采用管壳内匹配及外电路匹配相结合的方法,制作了超宽带SiC MESFET器件。优化了管壳内匹配形式,采用内匹配技术提高了器件输入阻抗及输出阻抗,采用外电路匹配的方法对器件阻抗进行了进一步提升。通过对输出匹配电路的优化实现了超宽带功率输出。优化了外电路偏置电路,消除了栅压调制效应,提高了电路稳定性。栅宽5 mm器件,脉宽为100μs、占空比为10%脉冲工作,工作电压VDS为48 V,在0.8～2.0 GHz频带内脉冲输出功率为15.2 W(41.83 dBm),功率密度达到3.04 W/mm,功率增益为8.8 dB,效率为35.8%,最终实现了超宽带大功率器件的制作。     

结合温度补偿的超声波测距系统设计

本设计实现了一种以AT89C2051单片机为核心的超声波测距系统,它具有低成本,高精度,微型化数字显示的特点.为提高测量精度,在测量时使用了DS18B20温度传感器对系统进行有效的温度补偿.经实验证明,本系统电路设计合理、工作稳定、检测速度快、测量简单、易于做到实时控制.     

基于子节点编码和声搜索的QoS组播路由算法

传统启发式方法求解QoS组播路由问题复杂度高,收敛速率慢,无法满足实际需求。该文提出一种基于子节点编码的和声搜索算法以解决该问题。在和声搜索算法的基础上,该算法设计了新的初始解及新解生成方式,提升了算法执行效率;提出了参数动态调整方案,兼顾了全局搜索以及局部搜索能力;同时设计了一种基于子节点的组播树编码方式,加快了新解生成过程。通过理论分析仿真实验,证明了该文算法的低复杂度,表明该文算法在收敛速率和代价方面具有明显优势。     

Analysis of Millimeter Wave Scattering by the Infinite Plane Metallic Grating Using PCG-FFT Technique

In this paper, both fast Fourier transformation (FFT) and preconditioned CG technique are introduced into method of lines (MOL) to further enhance the computational efficiency of this semi-analytic method. Electromagnetic wave scattering by an infinite plane metallic grating is used as the examples to describe its implementation. For arbitrary incident wave, Helmholz equation and boundary condition are first transformed into new ones so that the impedance matrix elements are calculated by FFT technique. As a result, this Topelitz impedance matrix only requires O(N) memory storage for the conjugate gradient FFT method to solve the current distribution with the computational complexity O(N log N) . Our numerical results show that circulate matrix preconditioner can speed up CG-FFT method to converge in much smaller CPU time than the banded matrix preconditioner.     

增益提高型套筒式全差分跨导放大器的设计与分析

提出了一种应用于流水线型模数转换器(ADC)的增益提高型套筒式全差分跨导放大器(OTA)的设计与分析方法.通过ADC的性能要求推导出OTA的设计指标.该设计中OTA的架构由主运放、增益辅助运放及共模反馈电路3部分子电路组成.设计采用SMIC CMOS 0.18mm工艺平台.该设计方法的实验结果表明:1pF负载下,跨导放大器.的直流增益达到145dB,单位增益带宽超过750MHz,相位裕度达到58°.闭环增益为4时,放大器在20ns内稳定到0.05%的精度.     

Interfacial reaction between 42Sn-58Bi solder and electroless Ni-P/immersion Au under bump metallurgy during aging

The interfacial reaction between 42Sn-58Bi solder (in wt.% unless specified otherwise) and electroless Ni-P/immersion Au was investigated before and after thermal aging, with a focus on the formation and growth of an intermetallic compound layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 μm (bare Ni), 0.1 μm, and 1 μm was plated on a 5-μm-thick layer of electroless Ni-P (with 14–15 at.% P). The 42Sn-58Bi solder balls were then fabricated on three different UBM structures by using screen printing and pre-reflow. A Ni₃Sn₄ layer formed at the joint interface after the pre-reflow for all three UBM structures. On aging at 125°C, a quaternary phase, identified as Sn₇₇Ni₁₅Bi₆Au₂, was observed above the Ni₃Sn₄ layer in the UBM structures that contain Au. The thick Sn₇₇Ni₁₅Bi₆Au₂ layer degraded the integrity of the solder joint, and the shear strength of the solder bump was about 40% less than the nonaged joints.     

Improvement of Linear Model of Plasma Filled Dielectric Cerenkov Maser

The plasma filled dielectric Cerenkov maser considering the effect of the plasma grating has been studied. The plasma grating is formed by the modulation of the strong fields. According to the plasma-grating model, An equivalent model is constructed. The modified dispersion relation has been derived .The numerical results show that when the modulation over the background plasma increases, the operation frequency also increases, however, the growth rate varies slightly. Compared with the calculation results obtained by treating the plasma as uniform fluids, the calculation results with the equivalent model describe the bounded bandwidth of the dielectric oscillator more precisely.