A 0.25-μm CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

We present a 1.9-GHz Personal Handy-phone System (PHS) transceiver, fully integrated and fabricated in 0.25-mum CMOS technology. The receiver is based on a 150-kHz low-IF architecture and meets the fast channel switching and DC-offset cancellation requirements of PHS. It includes a low-noise amplifier (LNA), a downconversion mixer, a complex filter, and a programmable gain amplifier. A fractional-N frequency synthesizer achieves seamless handover with a 25 mus channel switching time and a phase noise of -121 dBc/Hz at a 600-kHz offset frequency, with compliant ACS performance. The receiver provides -105 dBm sensitivity and 55 dBc ACS at a 600-kHz frequency offset. The transmitter is based on the direct modulation architecture and consists of an upconversion mixer and a pre-driver stage. The gain of the pre-driver is digitally controllable to suit any type of commercial power amplifier. The transmitter shows a 3% EVM and a 65 dBc ACPR at a 600-kHz offset frequency. The whole transceiver occupies 15.2 mm² and dissipates 70 mA in RX and 44 mA in TX, with a 2.8-V supply     

SALA: Smartphone-Assisted Localization Algorithm for Positioning Indoor IoT Devices

This paper proposes a Smartphone-Assisted Localization Algorithm (SALA) for the localization of Internet of Things (IoT) devices that are placed in indoor environments (e.g., smart home, smart office, smart mall, and smart factory). This SALA allows a smartphone to visually display the positions of IoT devices in indoor environments for the easy management of IoT devices, such as remote-control and monitoring. A smartphone plays a role of a mobile beacon that tracks its own position indoors by a sensor-fusion method with its motion sensors, such as accelerometer, gyroscope, and magnetometer. While moving around indoor, the smartphone periodically broadcasts short-distance beacon messages and collects the response messages from neighboring IoT devices. The response messages contains IoT device information. The smartphone stores the IoT device information in the response messages along with the message’s signal strength and its position into a dedicated server (e.g., home gateway) for the localization. These stored trace data are processed offline through our localization algorithm along with a given indoor layout, such as apartment layout. Through simulations, it is shown that our SALA can effectively localize IoT devices in an apartment with position errors less than 20 cm in a realistic apartment setting.     

A printed OTFT-backplane for AMOLED display

An AMOLED panel driven by an OTFT-backplane is an attractive display because OTFTs and OLEDs use organic materials with unique characteristics such as low temperature and solution processing ability, and thus are able to implement the key features of future displays. In this study we applied some printing technologies to fabricate an OTFT-backplane for AMOLEDs. Screen printing combined with photolithography with Ag ink was used for the gate electrodes and scan bus lines and contact pads. Ag metal lines with a width of 20 μm and thickness of 60 nm and resistivity of 3.0 × 10^?5 Ω cm were achieved. Inkjet printing was applied to deposit TIPS-pentacene as an organic semiconductor. The OTFT-backplane using the Ag gate electrodes and TIPS-pentacene exhibited uniform performance over 17,500 pixels on a 7 in. panel. The mobility was 0.31 ± 0.05 cm²/V s with a deviation of 17%. The AMOLED panel successfully demonstrated its ability to display patterns.     

Determination of the interface energy level alignment of a doped organic hetero-junction using capacitance–voltage measurements

A simple method based on capacitance–voltage (C–V) measurements is reported to determine the interface energy level alignment at the junction of 15 mol% Cs₂CO₃ doped 4,7-diphenyl-1,10-phenanthroline (BPhen) and 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN) fabricated under high vacuum. The junction properties, such as the depletion layer thickness, built-in potentials and vacuum level shift were calculated with simple Mott–Schottky and Poisson’s equations with the boundary condition of a continuous electric flux density using the information from the C–V data. The interface energy level alignment determined by this method is well matched with the one determined using the in situ ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS) experiments performed under ultra-high vacuum. This method can be applied to other semiconductor junctions such as the organic p–n homojunctions and heterojunctions with known energy levels, as long as the metal/semiconductor contact is Ohmic without referring to the photoemission spectroscopies. Moreover, the energy level alignment determined by the C–V measurement gives a more realistic result since the films for the measurements are formed under high vacuum which is a normal device fabrication environment rather than under ultra high vacuum.     

Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes

We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ～4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70°C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.     

Energetic distribution of interface states extracted from photo-conductance of organic thin film transistors

In this paper, a new method is introduced to obtain the energetic distribution of the interface states (density of states; DOS) extracted from the photo-conductance of organic thin film transistors (OTFTs) which exhibit varied transfer characteristics under illumination with different photon energies. The method was applied to pentacene OTFTs, and the results were compared with existing data. The major findings were not only the existence of the well-known peaks of DOS at 1.82 eV (free exciton of pentacene), and at 1.49 eV (extrinsic exciton due to dihydropentacene) but also new peaks were found at 1.25 eV, 1.29 eV, 1.31 eV, and 1.35 eV in the mid-gap. The new peaks were strongly enhanced under exposure to oxygen, and thus seem to be related to the defects associated with the presence of oxygen.     

Versatile threshold voltage control of OTFTs via discontinuous pn-heterojunction formation

We demonstrate the versatility of the threshold voltage control for organic thin-film transistors (OTFTs) based on formation of discontinuous pn-heterojunction on the active channel layer. By depositing n-type dioctyl perylene tetracarboxylic diimide molecules discontinuously onto base p-type pentacene thin films (the formation of the discontinuous pn-heterojunction), a positive shift of the threshold voltage was attained which enabled realizing a depletion-mode transistor from an original enhancement-mode pristine pentacene transistor. Careful control of the threshold voltage based on this method led assembling a depletion-load inverter comprising a depletion-mode transistor and an enhancement-mode transistor connected in series that yielded tunable signal inversion voltage approaching 0 V. In addition, the tunability could be applied to improve the program/erase signal ratio for non-volatile transistor memories by more than 4 orders of magnitude compared to reference memory devices made of pristine pentacene transistors.     

Encapsulation of lead-free Sn/Zn/Bi solder alloy particles by coating with wax powder for improving oxidation resistance

An encapsulation treatment of lead-free Sn/Zn/Bi solder powder was investigated for improving the oxidation resistance. Sn-8mass%Zn-3mass%Bi alloy particles were coated with a wax (12-hydroxystearic acid) powder by means of a dry mechanical treatment method using a ball mill. In order to determine the optimum operating conditions of the ball mill in the wax-coating treatments, the compressive energy required for deforming a single Sn/Zn/Bi alloy particle was measured with an unconfined compression tester and the mechanical energy applied to the alloy particles in the ball mill was estimated using the results of the compression test. The optimum operating conditions were determined based on both the applied energy and the flowability of solder pastes, and the wax-coated alloy particles maintaining the spherical shape were obtained under the conditions. The wettability test and the solder balling test for the solder pastes containing the wax-coated alloy particles stored at room temperature in air were carried out to evaluate the oxidation resistance performance. The wax-coated alloy particles had an excellent wettability compared with the original alloy particles, and the oxidation resistance of the Sn/Zn/Bi solder powder was improved by the encapsulation treatment.