Recovery of 80 GHz optical clock from 160 Gbit/s data using regeneratively modelocked laser diode

An 80 GHz optical clock signal was successfully recovered from a 160 Gbit/s data stream using a regeneratively modelocking scheme of a semiconductor modelocked laser (MLLD). To handle an 80 GHz electrical signal, the MLLD integrated with a high-mesa electroabsorption modulator and a W-band UTC-PD module are used in this scheme.     

A compact thin-film-based all-pass device for the compensation of the in-band dispersion in FBG filters

Fiber Bragg grating (FBG)-based bandpass filters, while possessing close to ideal sharp rolloff characteristics, can suffer from a significant amount of in-band dispersion. Results concerning the compensation of the in-band dispersion of a typical 100-GHz FBG using two thin-film all-pass filters, each composed of two coupled-cavities packaged in a compact configuration, are presented. The total peak insertion loss of the compensation package is less than 2.5 dB.     

40 Gbit/s electroabsorption modulators with impedance-controlled electrodes

A novel travelling-wave electroabsorption optical modulator, electrically matched for 50 /spl Omega/ loads of driving circuit drivers, was developed. The scattering parameter of electric reflection (S/sub 11/) from this modulator is less than -20 dB at 20 GHz. It can thus enable a 40 Gbit/s, 2 km SMF transmission with a 0.3 dB penalty at a 1.3 /spl mu/m wavelength.     

Accurate in situ measurement of peak noise and delay change inducedby interconnect coupling

An accurate in situ noise and delay measurement technique that considers interconnect coupling effects is presented. This paper improves upon previous work by proposing (1) a novel accurate peak detector to measure on-chip crosstalk noise, and (2) in situ measurement structure to characterize the dynamic delay effect. A test chip was fabricated using 0.35-μm process and measured results demonstrate the effectiveness of the proposed technique. Noise peak measurements show 40-60 mV (1.8% average) accuracy to simulation results and dynamic delay change curve match well with SPICE. The proposed measurement technique can be used for interconnect model verification and calibration, and has applications to various design automation tools such as noise-aware static timing analysis     

NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser

NRZ operation at 40 Gb/s has been successfully performed using a very compact module of a multiple-quantum-well (MQW) electroabsorption modulator integrated with a distributed-feedback (DFB) laser. While the DFB laser is injected with a constant current, the integrated MQW electroabsorption modulator is driven with a 10-Gb/s electrical NRZ signal. A clearly opened eye diagram has been observed in the modulated light from the modulator. And a receiver sensitivity of -27.2 dBm at 10/sup -9/ has been experimentally confirmed in the bit-error-rate (BER) performance.     

Ortho-deuterium Raman laser using the S0(2) rotationaltransition in the mid-infrared region

Based on a calculation for the Raman gain coefficient of the S₀(2) transition in ortho-D₂, we have demonstrated the generation of first Stokes waves in the 15-16-μm spectral region. Use of ortho-D enriched by a catalytic converter enabled us to realize efficient conversion at room temperature. Stokes energies as high as 400 mJ were obtained     

7W operation of 644 nm wavelength laser diode arrays with index-guided structure

A 7 W operation of a red semiconductor array laser is achieved at a wavelength of 644 nm with high reliability for the first time. The uniform near-field pattern has been obtained by applying index-guided structure to the broad-stripe laser.     

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.     

Interaction of Fragrance Materials With 2-Hydroxypropyl-beta-Cyclodextrin by Static and Dynamic Head-space Methods

The stability constants for the inclusion of fragrance materials with 2-hydroxypropyl-beta-cyclodextrin (2HP-beta-C yD) in aqueous solution have been determined by the static head-space method. The 1:1 stability constants obtained by this method were in reasonable agreement with the corresponding values in the literature. In addition, the release profiles of fragrance materials from 2HP-beta-CyD aqueous solution were investigated using the dynamic head-space method. It was found that the suppression of the fragrance materials release was dependent on their stability constants.     

Analysis of TE and TM modes in DFB lasers by two-dimensional theory

The two-dimensional theory of a distributed feedback (DFB) laser (which was previously presented and applied to the analysis of the laser threshold conditions for the transverse-electric (TE) mode in a simple three-layer waveguide structure) is developed to treat both TE and transverse-magnetic (TM) modes in a four-layer waveguide structure with a thin grating layer, which more closely reflects actual DFB laser structure. The differences between TE and TM modes for the dispersion relations and the laser threshold conditions are clarified. The effects of the waveguide structure (including grating layer thickness, refractive indexes of layers, coupling constant, and corrugation period) on the threshold gains and the gain differences between the two longitudinal modes on both sides of the Bragg frequencies are studied in detail for both TE and TM modes