Treatment of air polluted with high concentrations of toluene and xylene in a pilot-scale biofilter

Air biofiltration is now under active consideration for the removal of the volatile organic compounds from air polluted streams. In order to investigate the performance of this newly developed technology, a biofiltration pilot unit was operated for a continuous period of 8 months. The biofilter column was packed with commercially conditioned peat. At start-up, the filter bed was inoculated with four species of microorganisms. The resulting biofilter was fed with air contaminated with toluene, xylene or a mixture of toluene and xylene. The maximum elimination capacities attained were 165 g m⁻³ h⁻¹ for toluene, 66 g m⁻³ h⁻¹ for xylene and 115 g m⁻³ h⁻¹ for the mixture of toluene and xylene. These specific performances exceed the values published in the technical and commercial literature for similar processes. Xylene isomers were degraded in decreasing order of reactivity, m-xylene, p-xylene, o-xylene. In the case of air polluted with a toluene and xylene mixture, it was noticed that the metabolism of toluene biodegradation was inhibited by the presence of xylene. Characterization of the biofilm microbial populations after several weeks of operation showed that the dominant strains among the isolated culturable strains from the biofilm, even if different from the initially inoculated strains, had at least one physiological property favoring degradation of aromatic organic rings. The performance of the biofilter was found to be dependent on the temperature of the filter media and the pressure drop through the bed. Finally, a steady state mathematical model was tested in order to theoretically describe the experimental results. This model is used to illustrate the operating diffusion and reaction regimes at steady state for the case of each pollutant. © 1998 Society of Chemical Industry     

Defect characterization in graphene and carbon nanotubes using Raman spectroscopy

This review discusses advances that have been made in the study of defect-induced double-resonance processes in nanographite, graphene and carbon nanotubes, mostly coming from combining Raman spectroscopic experiments with microscopy studies and from the development of new theoretical models. The disorder-induced peak frequencies and intensities are discussed, with particular emphasis given to how the disorder-induced features evolve with increasing amounts of disorder. We address here two systems, ion-bombarded graphene and nanographite, where disorder is represented by point defects and boundaries, respectively. Raman spectroscopy is used to study the 'atomic structure' of the defect, making it possible, for example, to distinguish between zigzag and armchair edges, based on selection rules of phonon scattering. Finally, a different concept is discussed, involving the effect that defects have on the lineshape of Raman-allowed peaks, owing to local electron and phonon energy renormalization. Such effects can be observed by near-field optical measurements on the G' feature for doped single-walled carbon nanotubes.     

The use of a Ga+ focused ion beam to modify graphene for device applications

In this work, we clarify the features of the lateral damage of line defects in single layer graphene. The line defects were produced through well-controlled etching of graphene using a Ga(+) focused ion beam. The lateral damage length was obtained from both the integrated intensity of the disorder induced Raman D band and the minimum ion fluence. Also, the line defects were characterized by polarized Raman spectroscopy. It was found that graphene is resilient under the etching conditions since the intensity of the defect induced Raman D peak exhibits a dependence on the direction of the lines relative to the crystalline lattice and also on the direction of the laser polarization relative to the lines. In addition, electrical measurements of the modified graphene were performed. Different ion fluences were used in order to obtain a completely insulating defect line in graphene, which was determined experimentally by means of charge injection and electric force microscopy measurements. These studies demonstrate that a Ga+ ion column combined with Raman spectroscopy is a powerful technique to produce and understand well-defined periodic arrays of defects in graphene, opening possibilities for better control of nanocarbon devices.     

Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire

Externally applied electric field and effective radius effects are investigated on the lowest excitedstate shallow-donor binding energy in (In,Ga)N-GaN parabolic wire within the framework of single band effective-mass approximation. The calculations are performed using the finite-difference method within the quasi-one-dimensional effective potential model. Our results reveal that: (i) the probability density is the largest on a circularity whose radius is the effective radius, (ii) the lowest excited-state binding energy is the largest for impurity located on this circularity while it starts to decrease when the impurity is away from the circularity and (iii) the binding energy is strongly-dependent on the complex interplay of spatial confinement, coulomb interaction and applied electric field.     

Photoluminescence intensity of single-wall carbon nanotubes

The photoluminescence (PL) intensity of a single-wall carbon nanotube (SWNT) is calculated for each (n, m) by multiplying the photon-absorption, relaxation and photon-emission matrix elements. The intensity depends on chirality and “type I vs type II” for smaller diameter semiconducting SWNTs (less than 1 nm). By comparing the calculated results with the experimental PL intensity of SWNTs prepared by chemical vapor deposition at different temperatures, we find that the abundance of (n, m) nanotubes with smaller diameters should exhibit a strong chirality dependence, which may be related to the stability of their caps.     

Single nanotube Raman spectroscopy

A review is presented on the observation of the resonant Raman spectra from one isolated single wall carbon nanotube, focusing on the important structural information that is provided by single nanotube spectroscopy including the (n, m) determination of the individual tubes. The special sensitivity of the radial breathing mode to the (n, m) determination is emphasized, and the corroboration of this (n, m) assignment by diameter- and chirality-dependent phenomena in other Raman modes, such as the G-band, D-band, and G'-band features is also discussed. The significance of single nanotube spectroscopy for future nanotube research in general is briefly reviewed.     

Science and applications of single-nanotube Raman spectroscopy

A review is presented of the resonance Raman spectra from individual isolated single-wall carbon nanotubes (SWNTs). A brief summary is given of how the measurements are made. Why the resonance Raman effect allows single-carbon nanotube spectra to be observed easily and under normal operating conditions is summarized. The important structural information that is provided by single-nanotube spectroscopy using one laser line is discussed, and what else can be learned from tunable laser experiments is reviewed. Particular attention is given to the determination of the nanotube diameter and of the energy of its van Hove singularities Eii. Applications of single-nanotube spectroscopy are emphasized, such as measurements of isolated SWNTs connected with circuit-based samples and of isolated SWNTs mounted on an atomic force microscope tip. A critical assessment of the opportunities and limitations of the resonance Raman method for structural (n, m) identification is presented. The trigonal warping effect, which is central to the (n, m) identification in resonance Raman spectroscopy, is discussed in simple terms, and the importance of this effect in nanotube science and applications is reviewed.     

Raman scattering study of the phonon dispersion in twisted bilayer graphene

Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed.