Electrochemical reduction of arylidene benzohydrazides

Arylidene benzohydrazides are in moderate acid solution reduced electrochemically to benzamide and benzylamines; at pH 1 the reduction proceeds in two two-electron steps, the first step being a cleavage of the nitrogennitrogen bond. This is the basis for catalytic reduction of benzohydrazide using an aldehyde as catalyst.     

Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping

Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large‐area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal–OSC interfaces, a non‐ideal transfer curve feature often appears in the low‐drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self‐assembled monolayers and introducing charge injection layers. Here, a selective contact doping of 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F₄‐TCNQ) by solid‐state diffusion in poly(2,5‐bis(3‐hexadecylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT) to enhance carrier injection in bottom‐gate PBTTT organic field‐effect transistors (OFETs) is demonstrated. Furthermore, the effect of post‐doping treatment on diffusion of F₄‐TCNQ molecules in order to improve the device stability is investigated. In addition, the application of the doping technique to the low‐voltage operation of PBTTT OFETs with high‐k gate dielectrics demonstrated a potential for designing scalable and low‐power organic devices by utilizing doping of conjugated polymers.     

The Light‐Induced Field‐Effect Solar Cell Concept – Perovskite Nanoparticle Coating Introduces Polarization Enhancing Silicon Cell Efficiency

Solar cell generates electrical energy from light one via pulling excited carrier away under built‐in asymmetry. Doped semiconductor with antireflection layer is general strategy to achieve this including crystalline silicon (c‐Si) solar cell. However, loss of extra energy beyond band gap and light reflection in particular wavelength range is known to hinder the efficiency of c‐Si cell. Here, it is found that part of short wavelength sunlight can be converted into polarization electrical field, which strengthens asymmetry in organic‐c‐Si heterojunction solar cell through molecule alignment process. The light harvested by organometal trihalide perovskite nanoparticles (NPs) induces molecular alignment on a conducting polymer, which generates positive electrical surface field. Furthermore, a “field‐effect solar cell” is successfully developed and implemented by combining perovskite NPs with organic/c‐Si heterojunction associating with light‐induced molecule alignment, which achieves an efficiency of 14.3%. In comparison, the device with the analogous structure without perovskite NPs only exhibits an efficiency of 12.7%. This finding provides a novel concept to design solar cell by sacrificing part of sunlight to provide “extra” asymmetrical field continuously as to drive photogenerated carrier toward respective contacts under direct sunlight. Moreover, it also points out a method to combine promising perovskite material with c‐Si solar cell.     

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Optoelectronic devices based on metal halide perovskites, including solar cells and light‐emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic–inorganic hybrid perovskite materials can enable high‐performance, solution‐processed field‐effect transistors (FETs) for next‐generation, low‐cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single‐crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source–drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such “ideal” interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom‐contact, bottom‐gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single‐crystal FETs with high mobility of up to ≈15 cm² V^?1 s^?1 at 80 K. This work addresses one of the key challenges toward the realization of high‐performance solution‐processed perovskite FETs.     

Some aspects of the lateralization of echoed sound in man. I. The classical interaural-delay based precedence effect

The precedence effect in two-click stimuli was investigated by measuring observers' sensitivity to interaural time delays (ITDs) as a function of interclick interval (ICI). A two-interval two-alternative forced-choice discrimination paradigm was used in two stimulus configurations: type I, a dichotic click with a given ITD preceded a diotic click; and type II, a dichotic click followed a diotic click. Threshold ITDs were measured in each configuration for a finely sampled distribution of ICIs that ranged from 0.1 to 25.6 ms. Performance was characterized by the "threshold elevation factor" (TEF) which normalized each of the observers' type I and type II ITD thresholds relative to their ITD threshold for a single dichotic click. The finer sampling of ICIs revealed two novel results: First, for two observers, sensitivity to ITD in the later arriving ITD (type II) oscillated in a consistent and systematic way with changes in ICI. Second, when the ICI reached 12.8 ms, ITD thresholds in the type I and type II configurations were equal but nearly a factor of 2 greater than for a single dichotic click. Some aspects of the data are consistent with the phenomenon of binaural adaptation.     

Small networks of polarized splicing processors are universal

In this paper, we consider the computational power of a new variant of networks of splicing processors in which each processor as well as the data navigating throughout the network are now considered to be polarized. While the polarization of every processor is predefined (negative, neutral, positive), the polarization of data is dynamically computed by means of a valuation mapping. Consequently, the protocol of communication is naturally defined by means of this polarization. We show that networks of polarized splicing processors (NPSP) of size 2 are computationally complete, which immediately settles the question of designing computationally complete NPSPs of minimal size. With two more nodes we can simulate every nondeterministic Turing machine without increasing the time complexity. Particularly, we prove that NPSP of size 4 can accept all languages in NP in polynomial time. Furthermore, another computational model that is universal, namely the 2-tag system, can be simulated by NPSP of size 3 preserving the time complexity. All these results can be obtained with NPSPs with valuations in the set \(\{-1,0,1\}\) as well. We finally show that Turing machines can simulate a variant of NPSPs and discuss the time complexity of this simulation.