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961.
J Sato H Masuda S Tamaoki H Hamasaki K Ishizaka O Matsubara H Azuma 《Canadian Metallurgical Quarterly》1998,125(3):469-476
LBR (lamin B receptor) is an integral protein of the inner nuclear membrane encoded by a gene on human chromosome 1q42.1. LBR has a nucleoplasmic, amino-terminal domain of approximately 200 amino acids followed by a carboxyl-terminal domain similar in sequence to yeast and plant sterol reductases. We have determined the primary structures of two human proteins with strong sequence similarity to the carboxyl-terminal domain of LBR and sterol reductases. Their genes have recently been assigned the symbols TM7SF2 and DHCR7. TM7SF2 mRNA is most predominantly expressed in heart and DHCR7 mRNA mostly in liver and brain. Whereas LBR is localized to the inner nuclear membrane, these two related proteins are in the endoplasmic reticulum. The TM7SF2 gene contains 10 coding exons, and its intron positions are exactly conserved in the part of the LBR gene encoding its carboxyl-terminal domain. Intron positions in the DHCR7 gene are also similar. Both of these new LBR-like genes are on chromosome 11q13. These results describe a human gene family encoding proteins of the inner nuclear membrane and endoplasmic reticulum that function in nuclear organization and/or sterol metabolism. 相似文献
962.
Hideaki Adachi Toshifumi Satoh Masahiro Sakai Koichi Mizuno Kentaro Setsune 《Journal of Superconductivity and Novel Magnetism》1994,7(4):737-741
Epitaxial multilayer thin films of “infinite-layer” (Sr, Ca)CuO2 and perovskite (Sr, Ca)RuO3 have been prepared on (100) SrTiO3 substrates by multitarget rf magnetron sputtering. X-ray diffraction analyses revealed that the multilayer structure of (Sr, Ca)CuO3/(Sr, Ca)RuO3 was successfully fabricated with a minimum layer thickness of 20 Å. Transmission electron microscopy measurements of the multilayers indicated that there was no dislocation which normally exists in single-layer films with an infinite-layer structure. Resistivities of multilayer films at room temperature ranged from 1 to 10 mΩ cm and showed semiconductor-like dependence against the temperature. 相似文献
963.
964.
965.
Two ferredoxins were isolated from horsetail (Equisetum telmateia) and their amino acid sequences were determined by use of a sequence analyzer in combination with carboxypeptidase digestion and manual Edman degradation of tryptic peptides of carboxymethyl-ferredoxins. Ferredoxins I and II each had only four cysteine residues in a total of 95 and 93 residues, respectively. The amino-terminal residues of both ferredoxins were heterogeneous, but alanine was concluded to be their genuine terminal residue. The comparison of these isozymelike molecules showed 29 differences in amino acid residues with three inverted replacements. One gap was inserted in ferredoxin II at position 32 to align the ferredoxins with greatest homology. Despite the many differences in amino acid residues there was no difference in net charges of the two ferredoxins. 相似文献
966.
967.
The authors investigated the effectiveness of the T/sup 3/ (thin-tapered thickness active layer) structure in reducing the carrier density in the active layer as well as the optical density near the mirror. 780 nm AlGaAs lasers with this structure have been operating under 50 degrees C, 30 mW CW (continuous wave) conditions over 10/sup 4/ h with little degradation. The minimal degradation rate is about 0.45%/10/sup 3/ h.<> 相似文献
968.
Diamond was formed from purified natural graphite under high pressure and temperature conditions (7 G Pa, 1700° C) using a solvent-catalyst in the unary (Fe) or binary (Fe-Ti) system. The effect of an ambient pretreatment of the starting mixed powder (graphite and solvent-catalyst) was investigated in relation to the formation and grain growth of diamond. An initial desorption of adsorbed water vapour or harmful gases from the starting powder in vacuum (2 × 10–5 torr) at higher temperatures (>400° C) was required in order to increase the conversion ratio from graphite to diamond. The subsequent ambient pretreatment at 1000° C in different atmospheres was found to affect the grain growth process of diamond. The depression of grain growth was confirmed in both cases of pretreatments in vacuum (2 × 10–5 torr) and in an argon atmosphere (1 × 10–3 or 760 torr). The diamond grains were discrete in the vacuum pretreatment, while a particle joining between the diamond grains was promoted in the argon pretreatment. The pretreatment in an N2 atmosphere (1 × 10–3 or 760 torr) tended to accelerate the grain growth of diamond. 相似文献
969.
The separation of 24 dansylamino acids was investigated by capillary electrophoresis with an additive of micelles of a non-ionic surfactant, Tween 20. Although two pairs of peaks, norvaline and methionine derivatives, and didansyltyrosine and solvent (methanol), did not show good resolution, other dansylamino acids were well separated within 70 min using 100 mM Tween 20 and pH 2.40. The theoretical plate numbers calculated for dansylamino acids were 28,000-111,000 with a 19-cm capillary column. 相似文献
970.
Takashi Sugino Hiroyuki Yamamoto Takashi Yamada Hideaki Ninomiya Yoshifumi Sakamoto Koichiro Matsuda Junji Shirafuji 《Journal of Electronic Materials》1991,20(12):1001-1006
Characteristics of An/n-InP Schottky junctions formed onn-InP treated with hydrogen (H2)-and phosphine (PH3)-plasmas have been investigated. An enhancement of the barrier height up to 0.7 eV or more is observed for Schottky junctions
processed sequentially with plasma treatment, laboratory air oxidation and Au evaporation. From the measurement of Schottky
junctions formed by in-situ metallization immediately after H2-plasma treatment, it is found that laboratory air oxidation permits an increase in the barrier height by about 0.1 eV. The
annealing experiment of Schottky junctions treated with plasma reveals that the substantial part of the barrier height enhancement
is caused by release of the Fermi level pinning due to hydrogen passivation of surface defects. Although both H2- and PH3-plasmas are effective in enhancing the barrier height, PH3-plasma is preferable in respect to minimizing plasma-induced damage. In the case of H2-plasma treatment deep electron traps with activation energies of 0.21 and 0.51 eV below the conduction band are generated
at and/or near the surface of InP, while these traps are not detected after PH3-plasma treatment. 相似文献