Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride
(DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped
layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher
electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth
temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×1016 cm−3 to 2.6×1018 cm−3. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms
for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors.
Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing
the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger
for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and
to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface
also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth
temperature. 相似文献
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献
The amplification characteristics of a high Tm3+ concentration gain-shifted Tm-doped fluoride fibre amplifier (GS-TDFA) have been determined with a high input signal power. This GS-TDFA achieved the highest reported internal power conversion efficiency of 70% with a double pass configuration 相似文献
The authors describe a planar process for the AlGaAs/GaAs HBTs in which collector vias are buried selectively, even to the base layers, with chemical vapor deposited tungsten (CVD-W) films. By using WF6 /SiH4 chemistry, W could be deposited on Pt films, which were overlapped 50 nm thick on the AuGe-based collector electrodes, without depositing W on the surrounding SiO2 layers. Current gains of planar HBTs with 3.5-μm×3.5-μm emitters were up to 150, for a collector current density of about 2.5×104 A/cm2相似文献
Istanbul is one of the most famous historical cities in the world. However, the project alignment selected as the best of a range of alignments cannot avoid passing beneath the historical and cultural heritages of Istanbul as well as under ancient and densely inhabited areas of the city. This paper will explain some of the challenges related to the bored tunnels.
Historical buildings are vulnerable. Yet many existing residential and office buildings are old and constructed on minimal foundations. As a consequence, it is vital that any drawdown of groundwater and any ground settlements have to be minimized.
In addition, the connection between the immersed and bored tunnels will be made directly and totally underground, without the usual intermediate shafts and beneath the deep waters of the Bosphorus Strait. This operation needs the utmost control of the tunnel excavation face to ensure its stability and to minimize water ingress. Based on such considerations, tunnel excavation by tunnel boring machine (TBM) using a slurry shield and having the ability to operate under high pore pressures was recommended as the method of excavation for the main running tunnels.
The paper will explain how the design team from Avrasyaconsult – the Employer’s Representative – arrived at the final minimum, specific and functional requirements of the bored tunneling works which are to be carried out using the ‘FIDIC EPC/Turnkey Project’ conditions. 相似文献
On the basis of structural information for the cyclic hexapeptide endothelin (ET) receptor antagonist, TAK-044, a series of thieno[2,3-d]pyrimidine-2,4-dione derivatives bearing a carboxyl group and aromatic rings that were important for receptor binding were designed, synthesized, and evaluated for ET receptor binding affinities and inhibitory activities against ET-induced vasoconstriction. Optimization of each substituent in the thieno[2,3-d]pyrimidine ring led to the discovery of a novel and potent nonpeptide ET receptor antagonist, 6-(4-methoxymethoxyphenyl)-5-methylsulfonylaminomethyl-1-(2- methylthiobenzyl)-2,4-dioxo-1,2,3,4-tetrahydrothieno[2,3-d]p yrimidine-3- acetic acid (32 g), which binded to human ETA and ETB receptor subtypes with affinities (IC50) of 7.6 and 100 nM, respectively. Compound 32 g effectively antagonized ET-induced vasoconstriction and the inhibitory effect mediated by the ETB receptor was more potent than that of bosentan, while the inhibitory effect mediated by the ETA receptor was slightly less potent than that of bosentan. 相似文献
The proposed plasma lens experiment at the Final focus Test Beam (FFTB) facility of the Stanford Linear Accelerator Center has been approved by the adminstration. The experiment would allow the examination of plasma focusing devices for particle beams in the parameter regime of interest to future high-energy colliders. It is expected to lead to compact plasma lens designs capable of focusing the beam to unprecedented small spot sizes. 相似文献
The calcium antagonistic and alpha 1-adrenergic receptor blocking activities of monatepil maleate (CAS 103377-41-9, (+/-)-N-(6,11-dihydrodibenzo [b, e] thiepin-11-yl) -4-(4-fluorophenyl)-1-piperazinebutanamide monomaleate, AJ-2615), a novel calcium antagonist, its metabolites and their enantiomers were studied in vitro. Monatepil maleate inhibited calcium-induced contractions of rat thoracic aorta (pA2 = 8.71) and l-phenylephrine-induced contractions of rabbit superior mesenteric artery (IC50 = 56.6 nmol/l). The calcium antagonistic activities of the metabolites of monatepil maleate (AJ-2615-sulfoxide A, AJ-2615-sulfoxide B and AJ-2615-sulfone) were 1/10 of that of monatepil maleate. However, their alpha 1-adrenergic receptor blocking activities were similar to or slightly more potent than that of monatepil maleate. The potencies of the calcium antagonistic activities of monatepil maleate and its enantiomers [(S)-AJ-2615 and (R)-AJ-2615] were in the order of (S)-AJ-2615 > monatepil maleate > (R)-AJ-2615 whereas no difference was observed among them in alpha 1-adrenergic receptor blocking activity. In calcium antagonistic and alpha 1-adrenergic receptor blocking activities, there was no difference between the enantiomers of monatepil maleate metabolites. In conclusion, there was a difference with several times in calcium antagonistic activity between the two enantiomers of monatepil maleate but not in their alpha 1-adrenergic receptor blocking activity. 相似文献