EPR study of hydrogen-related defects in boron-doped p-type CVD homoepitaxial diamond films

Boron-doped p-type single crystalline chemical vapor deposition (CVD) homoepitaxial diamond films were investigated by electron paramagnetic resonance (EPR). Carbon dangling bond defects, which were accompanied by a nearby hydrogen atom, were observed in boron-doped p-type CVD diamond films on a IIa substrate similar to those observed in undoped diamond. This result suggested that the energy level position of the defects is located below the Fermi energy of boron-doped diamond, at around 0.3 eV above the valence-band top. The reason why the Fermi energy could be changed by the incorporation of boron atoms at low density (10¹⁶–10¹⁷/cm³) in the film in spite of the existence of the large defect density of EPR centers (10¹⁸/cm³) is thought to be that the singly occupied electron states of defects are located near the band edge. As for the thermal annealing effect of the defects, it was revealed that the concentration of the defects and the mobility of the p-type film did not change after annealing up to 1200 °C which is much higher than the temperature of boron–hydrogen pair dissociation.     

Functional interface of polymer modified graphite anode

Graphite electrodes were modified by polyacrylic acid (PAA), polymethacrylic acid (PMA), and polyvinyl alcohol (PVA). Their electrochemical properties were examined in 1 mol dm⁻³ LiClO₄ ethylene carbonate:dimethyl carbonate (EC:DMC) and propylene carbonate (PC) solutions as an anode of lithium ion batteries. Generally, lithium ions hardly intercalate into graphite in the PC electrolyte due to a decomposition of the PC electrolyte at ca. 0.8 V vs. Li/Li⁺, and it results in the exfoliation of the graphene layers. However, the modified graphite electrodes with PAA, PMA, and PVA demonstrated the stable charge–discharge performance due to the reversible lithium intercalation not only in the EC:DMC but also in the PC electrolytes since the electrolyte decomposition and co-intercalation of solvent were successfully suppressed by the polymer modification. It is thought that these improvements were attributed to the interfacial function of the polymer layer on the graphite which interacted with the solvated lithium ions at the electrode interface.     

Functional binders for reversible lithium intercalation into graphite in propylene carbonate and ionic liquid media

Poly(acrylic acid) (PAA), poly(methacrylic acid) (PMA), and poly(vinyl alcohol) (PVA), which have oxygen species as functional groups, were utilized as a binder for graphite electrodes, and the electrochemical reversibility of lithium intercalation was examined in PC medium and ionic liquid electrolyte, lithium bis(trifluoromethanesulfonyl)amide dissolved in 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)amide (BMP-TFSA). Columbic efficiency of 75–80% with more than 300 mAh g^?1 was achieved upon first reduction/oxidation cycle in both electrolytes using these binding polymers, which were significantly improved in comparison to a conventional PVdF binder (less than 45% of columbic efficiency for the first cycle). For the graphite-PVdF electrode, co-intercalation and/or decomposition of PC molecules solvating to Li ions were observed by the electrochemical reduction, resulting in the cracking of graphite particles. In contrast, the co-intercalation and decomposition of PC molecules and BMP cations for the first reduction process were completely suppressed for the graphite electrodes prepared with the polymers containing oxygen atoms. It was proposed that the selective permeability of lithium ions was attained by the uniform coating of the graphite particles with PAA, PMA, and PVA polymers, because the electrostatic interaction between the positively charged lithium ions and negatively charged oxygen atom in the polymer should modulate the desolvation process of lithium ions during the lithium intercalation into graphite, showing the similar functions like artificial solid-electrolyte interphase.     

Intramolecular hydrogen bonding (proton transfer) of 1-phenyl-1,3-butanedione

Through the (1)H and (13)C NMR measurements for the symmetrical beta-diketones such as 2,4-pentanedione and 1,3-diphenyl-1,3-propanedione and unsymmetrical one such as 1-phenyl-1,3-butanedione at various concentrations and temperatures, we confirmed that 1-phenyl-1,3-butanedione in CDCl(3) exists as monomers in its relatively low concentration. In addition, the 1-phenyl-1,3-butanedione in CDCl(3) exists not as a keto-form but as two kinds of cis-enol forms. The proton transfer between the two kinds of cis-enols for 1-phenyl-1,3-butanedione was discussed thermodynamically; it is concluded that the OH proton of enol of 1-phenyl-1,3-butanedione is considerably located near the oxygen atom attached to the carbon atom linking to a phenyl group.     

Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

A process of homoepitaxial growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a lateral growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.     

Electron emission suppression from hydrogen-terminated n-type diamond

By total photoelectron yield spectroscopy (TPYS), we have found a thermal instability of a negative electron affinity in hydrogen-terminated n-type diamond films, which has never been observed for intrinsic and p-type diamond films. Experimentally, we have succeeded in detecting surface defect states and surface valence band extended states on the same n-type sample after soft annealing from 100 to 300 °C, which allowed us to evaluate the surface Fermi level and surface band bending using phosphorus doping parameters. Our results show that “quasi-positive” electron affinity prevents electron emission from an n-type diamond film even though its surface has a negative electron affinity.     

Effects of micafungin on the morphology of Aspergillus fumigatus

The morphological effects of micafungin, a member of a new class of antifungal agents candins, on growing hyphae of Aspergillus fumigatus were studied by the use of Nomarski microscopy, scanning electron microscopy and thin-section electron microscopy. Micafungin at concentrations of 0.001-0.1 microg ml(-1) strongly inhibited the in vitro growth of this fungus and induced striking changes in the hyphal morphology, depending on the drug concentration and the length of the incubation period. The changes observed included increased formation of branches on the lateral walls, disruption of the tips of both hyphal cells and branches, and crushing and collapse of whole hyphae. In addition, micafungin was also effective in damaging membranous structures, including disruption of the cell membrane, partial loss of nuclear membranes and expansion of endoplasmic reticula. From these results, it was concluded that micafungin primarily affected the normal formation of cell walls and septa of growing hyphae. The inhibition of apical growth of hyphae accompanied by excessive lateral branching that was followed by disruption of both hyphal tips and branch tips ultimately led to the destruction of whole hyphae. This cytological effect of micafungin on the hyphal growth of A. fumigatus can explain its potent anti-Aspergillus activity.     

Light absorption and photoluminescence of porous silicon

The results of an experimental study of Raman scattering, photoluminescence, and light absorption and reflection in porous silicon layers obtained by electrochemical etching of single-crystal wafers are presented. It is concluded on the basis of an analysis of the experimental data that the centers responsible for radiative and nonradiative recombination in this material are of a multiple character. The experimental data show that the centers whose maximum of optical excitation lies in the blue-green region of the spectrum have a uniform distribution, in contrast with the centers whose region of efficient excitation lies in the red region of the spectrum. The radiative recombination efficiency of the latter increases in a thin, near-surface layer of a porous-silicon film. Fiz. Tekh. Poluprovodn. 32, 1001–1005 (August 1998)